胡晓东

Gender:Male

Alma Mater:电子科技大学

Education Level:Postgraduate (Doctoral)

[MORE] Honors and Titles:

2012-01-01 北京大学优秀教学奖

2006-01-01 北京大学正大教师奖

1996-01-01 北京大学青年教师奖

1994-01-01 清华大学青年教师奖

Paper Publications

Current position: Home > Scientific Research > Paper Publications

High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,

Release time:2020-02-14 Hits:

Impact Factor:0.0

Journal:APPLIED PHYSICS LETTERS

Note:Lei Wang, Rui Li, Ziwen Yang, Ding Li, Tao Yu, Ningyang Liu, Lei Liu, Weihua Chen, and Xiaodong Hu*

Issue:95 (21)

Page Number:211104, 2009

Translation or Not:no

Pre One:Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure

Next One:Improved Multi-layer Stopper in the GaN-based Laser Diode, Semicond. Sci.

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