胡晓东

Gender:Male

Alma Mater:电子科技大学

Education Level:Postgraduate (Doctoral)

[MORE] Honors and Titles:

2012-01-01 北京大学优秀教学奖

2006-01-01 北京大学正大教师奖

1996-01-01 北京大学青年教师奖

1994-01-01 清华大学青年教师奖

Paper Publications

Current position: Home > Scientific Research > Paper Publications

Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels,

Release time:2020-02-14 Hits:

Impact Factor:0.0

Journal:Applied Physics Express,

Note:Lei Li, Justin P. C. Liu, Lei Liu, Ding Li, Lei Wang, Chenghao Wan, Weihua Chen, Zhijian Yang, Yahong Xie, Xiaodong Hu*, and Guoyi Zhang

Issue:5 (2012)

Page Number:051001

Translation or Not:no

Pre One:Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes

Next One:Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes

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