影响因子：15.0
DOI码：10.1038/s41467-021-21927-5
发表刊物：Nature Communications
摘要：The stacking sequence of hexagonal close-packed and related crystals typically results in
steps on vicinal {0001} surfaces that have alternating A and B structures with different
growth kinetics. However, because it is difficult to experimentally identify which step has the
A or B structure, it has not been possible to determine which has faster adatom attachment
kinetics. Here we show that in situ microbeam surface X-ray scattering can determine
whether A or B steps have faster kinetics under specific growth conditions. We demonstrate
this for organo-metallic vapor phase epitaxy of (0001) GaN. X-ray measurements performed
during growth find that the average width of terraces above A steps increases with growth
rate, indicating that attachment rate constants are higher for A steps, in contrast to most
predictions. Our results have direct implications for understanding the atomic-scale
mechanisms of GaN growth and can be applied to a wide variety of related crystals.
论文类型：期刊论文
是否译文：否
收录刊物：SCI、EI、SSCI、CPCI-S
发布期刊链接：https://doi.org/10.1038/s41467-021-21927-5
第一作者：鞠光旭
发表时间：2021-03-19