鞠光旭
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助理教授 博士生导师 硕士生导师 性别:女 主要任职:教研 在职信息:在职 所在单位:凝聚态物理与材料物理研究所 职务:研究员|博雅青年学者 学历:博士研究生毕业 学位:博士学位 毕业院校:日本名古屋大学
办公地点:北京市海淀区成府路209号物理中楼414-2办公室
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影响因子:15.0
DOI码:10.1038/s41467-021-21927-5
发表刊物:Nature Communications
摘要:The stacking sequence of hexagonal close-packed and related crystals typically results in
steps on vicinal {0001} surfaces that have alternating A and B structures with different
growth kinetics. However, because it is difficult to experimentally identify which step has the
A or B structure, it has not been possible to determine which has faster adatom attachment
kinetics. Here we show that in situ microbeam surface X-ray scattering can determine
whether A or B steps have faster kinetics under specific growth conditions. We demonstrate
this for organo-metallic vapor phase epitaxy of (0001) GaN. X-ray measurements performed
during growth find that the average width of terraces above A steps increases with growth
rate, indicating that attachment rate constants are higher for A steps, in contrast to most
predictions. Our results have direct implications for understanding the atomic-scale
mechanisms of GaN growth and can be applied to a wide variety of related crystals.
论文类型:期刊论文
是否译文:否
收录刊物:SCI、EI、SSCI、CPCI-S
发布期刊链接:https://doi.org/10.1038/s41467-021-21927-5
第一作者:鞠光旭
发表时间:2021-03-19