Lin Fang

Senior engineer

Alma Mater:北京大学

Education Level:With Certificate of Graduation for Doctorate Study

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Paper Publications

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Identification and elimination of inductively coupled plasma-induced defects in AlxGa1-xN/GaN heterostructures

Release time:2020-06-11 Hits:

Impact Factor:0.0

Journal:Chinese Physics B

Translation or Not:no

Pre One:Leakage current reduction by the thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures

Next One:Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1-xN/GaN heterostructures at high temperatures

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