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吕劲

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Academic Title:

Degree:Doctoral degree

Status:Employed

School/Department:Institute of Condensed Matter Physics and Material Physics

Paper Publications

Current position: Home / Scientific Research / Paper Publications

[1] Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride, NPG ASIA MATERIALS, 4, e6, 2012.
[2] Tunable Bandgap in Silicene and Germanene, NANO LETT., 12, 113–118, 2011.
[3] High-performance sub-10-nm monolayer black phosphorene tunneling transistors, Nano Research, 11, 2658–2668, 2017.
[4] Spontaneous valley splitting and valley pseudospin field effect transistors of monolayer VAgP2Se6, NANOSCALE, 10, 13986, 2018.
[5] All-Metallic Vertical Transistors Based on Stacked Dirac Materials, Adv. Funct. Mater., 25, 68–77, 2014.
[6] Many-Body Effect and Device Performance Limit of Monolayer InSe, ACS APPL. MATER. INTERFACES, 10, 23344−23352, 2018.
[7] Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene, CHEMISTRY OF MATERIALS, 29, 2191−2201, 2017.
[8] Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors, PHYSICAL REVIEW APPLIED, 10, 024022(1-13), 2018.
[9] Tunable band gap in few-layer graphene by surface adsorption, SCIENTIFIC REPORTS, 3, 2013.
[10] Ohmic contacts between monolayer WSe2 and two-dimensional titanium carbides, Carbon, 135, 125, 2018.

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