教育部新世纪人才
北京市自然科学二等奖获得者
庆祝中华人民共和国成立70周年纪念章获得者
电话：62755701， 传真：62751615
电子邮件地址：jinglu@pku.edu.cn
个人简历：
1997年北京大学物理系凝聚态理论专业直博毕业，现任物理学院（教授级）研究员。日本学术振兴会（JSPS）特别研究员(就职于国立日本分子科学研究所), 美国内布拉斯加大学奥马哈分校客座副教授。量子物质科学协同创新中心研究员。陕西理工大学“汉江学者”计划特聘教授。2019年获北京大学国庆重大活动特殊贡献奖和教育部集体嘉奖。2020年获得陕西省高等学校科学技术进步二等奖。2021年获得北京市自然科学二等奖（第一完成人）和中国电子学会科学技术奖自然科学三等奖。入选爱斯维尔2020、2021、2022年中国高被引学者（物理学），以及2020、2021年年斯坦福大学全球排名前2%顶尖科学家生涯影响力榜单和年度影响力榜单。全球学者网全球顶尖前10万科学家（排名12525位）。 北京大学钟盛标教师科研奖和北京大学物理学院赵凯华优秀教学奖获得者 。
主要研究领域：
由于计算方法的深入发展和过去几十年中高速计算机的出现和普及，随着物理学基础理论的进一步突破，物理学家们逐步可以应用一些更严格和更全面的复杂模型，来定量研究实际的复杂体系的物理性质。基于物理学基本原理的数值计算和模拟已经成为将理论物理和实验物理紧密联系在一起的一座重要桥梁：它不仅能够弥补简单的解析理论模型难以完全描述复杂物理现象的不足，而且可以克服实验物理中遇到的许多困难，例如直接模拟实验上不能实现或技术条件要求很高、实验代价昂贵的物理系统等。
除了研究静态的性质，密度函数理论(DFT)和非平衡格林函数方法(NEGF)结合可以计算凝聚态材料的量子输运性质，把凝聚态计算物理的研究能力向接近实验方向大大提高了一步。纳米材料是指晶粒尺寸为纳米级的超细材料，是目前材料科学研究的一个热点，其相应发展起来的纳米技术被公认为是21世纪最具有前途的科研领域之一。由于量子限制效应，表面效应，边缘效应，减小的短沟道效应和增强的库仑相互作用，使得纳米材料常常显示出有别于相应的块材的新奇性质。晶体管是上个世纪最重要的发明之一，是信息社会的物质基础。摩尔发现每隔两年，集成电路上的晶体管数目就会翻一番，同时性能提高一倍（摩尔定律）。单个芯片上晶体管的集成度已经达到几十亿。未来的晶体管将工作在10纳米以下。
本团队主要致力于利用DFT+NEGF研究低维纳米体系的量子调控、准粒子效应和激子效应、能谷电子学、拓扑性质、光电性质、旋轨耦合性质、电声耦合性质等，并利用这些纳米材料设计新型纳米电子学器件、纳米光电子学器件、自旋电子学器件和储能器件等。尤其致力于研发高性能和低功耗的逻辑型器件，希望把摩尔定律延续到10纳米以下。
目前兴趣：
1. 二维晶体管的性能极限
2. 二维材料的电接触
3. 离子电池器件
4. 二维光电器件
5. 二维磁性器件
主要贡献：
在二维材料器件第一型原理模拟方面是国际领先的小组之一。
1. 提出了一系列调控狄拉克材料硅烯、石墨烯能隙的新方案，并通过器件模拟演示出来。其中发表于Nano Lett 12, 113 (2012) 的硅烯的晶体管第一性原理模拟工作第一次提出了通过电场打开硅烯能隙的方案，并进行了原理器件模拟，是二维晶体管第一型原理模拟工作中引用最高的论文（被引用1000多次）。撰写了目前关于硅烯的最全面综述，发表于材料科学顶级期刊 Progress in Materials Science 83，24 (2016) 。
2. 把精确的第一性原理量子输运方法引入到典型的亚10 nm 二维本征半导体晶体管模拟，用该方法系统模拟了亚10 nm二维本征半导体晶体管性能的尺寸缩小行为（scaling），并与国际半导体技术线路图（ITRS） 进行对标，论证了它们超越了传统硅器件，并找到了影响器件性能的关键因素，为高性能亚10 nm 二维本征晶体管的研发提供了理论依据。获得基金委重大研究计划资助。撰写了亚10 nm 二维晶体管的长篇综述，发表在物理学顶级综述期刊 Physics Reports 84 (5), 056501 (2021).
3. 发展了用量子输运研究二维材料与金属界面的系统方法，能够精确预测出界面处的肖特基势垒。并通过范德瓦尔斯型接触，实现肖特基势垒的降低和调节。攥写了二维材料肖特基势垒的综述 ，发表于物理学顶级综述期刊 Reports on Progess in Physics 84 (5), 056501 (2021).
4. 发现了最大体能隙的拓扑绝缘体(铋烷），在BNC体系中预测并实验观测到了谷极化现象。
在凝聚态计算物理领域发表SCI文章300余篇(英文综述7篇），包括：Progress in Materials Science （1篇）, Physics Reports （1篇）， Reports on Progress in Physics (1 篇), Physical Review Letters (2篇)， Journal of the American Chemical Society（7篇）, Nano Letters (4篇），Advanced Materials (4篇）， Advanced Functional Materials (1篇）, ACS Nano （4篇），Angewandte Chemie (1篇), NPG Asia Materials (2篇), 2D Materials (2 篇)，Chemistry of Materials (3 篇)，Small (2篇), Scientific Reports (9篇)。被Nature，Science，Nature Materials, Nature Nanotechnology, Physical Review Letters, Journal of the American Chemical Society等SCI杂志他引11000多次， 单篇最高它引超过1000次，H因子61（Web of science）。有16篇论文进入ESI高被引用论文，有3篇进入ESI热点论文。23篇论文引用超过100次。
2013年6月出版的《科学中国人》杂志，2018年5月3日的 《科技日报》有专题报道，新华网，中国新闻，澎湃新闻等各大网站进行了转载。2023年《中华英才》杂志专题报道。
Nature Electronics, Nature Commnications, Physical Review Letters/Physical Review B, Journal of the American Chemical Society, Nano Letters, Acs Nano, Acs: Applied Materials & Interfaces, Angewandte Chemie,Advanced Materials, Advanced Functional Materials, Small, 2D Materials, Nanoscale, Journal of Physical Chemistry B，Journal of Chemical Physics, Applied Physics Letters, Nanotechnology, Europe Physics Letters, ChemPhysChem, Computational Theoretical Chemistry, Theoretical Chemistry Account, Journal of Computational Chemistry, Chemical Physics Letters, Physica E, Physica B, Physics Letter A, Solid State Communications, Journal of the American Ceramic Society, Physica Status Solidi B, Solid State Science, Journal of Material Chemistry, Journal of Nanomaterials 等100多种国际期刊审稿人。
Research ID: http://www.researcherid.com/rid/H-4248-2013
已经毕业博士23名：
l 宋炜
l 王路（美国内布拉斯加大学博士后）
l 赖林（澳大利亚博士后，西南大学副教授）
l 罗光富（南方科大助理教授、副研究员，在Nature Materials 发表一作论文）
l 周晶（人大附中）
l 覃睿（九院）
l 李鸿（丹麦理工大学博士后，北方工业大学副教授）
l 刘奇航（美国西北大学博士后，科罗拉多大学Boulder分校研究员，2017年获得青年千人称号，南方科大副教授）
l 徐成勇（美国贝勒大学博士后，南昌大学副教授）
l 郑家新（北大深圳研究生院副教授）
l 李佳阳
l 屈贺如歌 (北京邮电大学副教授)
l 王洋洋 （中国空间技术研究中心，钱学森中心副研究员）
l 叶萌
l 潘圆圆 （青岛大学特聘教授）
l 张涵 （西北大学讲师）
l 李菁桢 （北京工业大学助理研究员）
l 张修营（新加坡国立大学博士后）
l史博文
l刘士琦
l杨晨
l杨洁
l吴葆春
研究项目：
· 主持项目：
o 教育部新世纪人才基金（2008）
o 留学回国基金 (2006)
o 985二期 公用计算软件平台
o 第三世界科学院科学研究计划项目
o 日本科学补助金(2001-2003年)项目
o 国家自然科学基金会青年基金(2002-2004年)
o 国家自然科学基金会面上基金(2005-2007年)
o 国家自然科学基金会面上基金(2008-2010年）
o 国家自然科学基金会面上基金(2013-2016年）
o 国家自然科学基金会面上基金(2017-2020年）
o 国家自然科学基金会重大研究计划（2020-2022年）
· 学术骨干：
o 科技部重大研究计划三项
讲授课程：
· 本科生必修课固体物理。从2015年起，担任该课的主持人。最高评分93.74
· 研究生必修课固体理论
· 研究生本科生选修课密度泛涵理论及其应用，最高评分99.75，全院排名第5。
重要活动：
参加庆祝中华人民共和国成立70周年群众游行，走过天安门，获得学校“北京大学国庆70周年重大活动特殊贡献奖”，获得教育部集体明令嘉奖，并获得国家颁发纪念章。
代表性工作：
1 二维狄拉克材料能隙调控及器件设计
随着物理微裂解生产石墨烯的简单方法在2004年的出现，真实的二维单原子层材料第一次出现在人们面前。二维材料由于超薄，有更小的特征长度，带来更好的门控特性。同时表面光滑没有悬挂键，有利于载流子的输运。石墨烯具有异常高的载流子迁移率，但零能隙的特点阻止了它直接做成高表现的场效应管。打开一个可控的能隙，并保持较高的迁移率是石墨烯研究最重要和急迫的主题之一。我们以硅烯晶体管为例，展示我们这部分的成果。
基于硅烯的晶体管
我们首次提出具有起皱结构的单层的硅烯和锗烯可以被垂直平面的电场破坏上下原子的反演对称打开能隙并且打开的能隙随电场强度线性增加，同时高的载流子迁移率也能够保持。提供了第一个原理器件模型，利用非平衡格林函数方法计算证明了硅烯制成的场效应管在室温下具有电流开关效应，开关比是无电场时的8到50倍。该工作发表在《Nano Letters》, 12(1), 113-118 (2011)，被列入ESI高被引论文，目前已被SCI引用900多次，据我们所知是目前二维原子晶体器件完全第一性原理模拟论文中引用最高的论文。该论文在《Nano Letters》2012年发表的1108篇论文中，引用排第15位。推动了硅烯成为2014年物理学中10个最前沿的研究热点（第四位）。
2015年实验上首次制备硅烯晶体管（《Nature Nanotechnology》， 10 , 227 (2015)），该文在引言中引用我们《Nano Letters》, 12(1), 113-118 (2011)的工作作为研究动机之一。硅烯晶体管的制备，被美国化学会C&EN网评选出2015年11项最受瞩目的化学成果之一，并被美国Discovery 杂志选为2015年100项科学成果的第33项。
后来我们又发现通过单面吸附金属原子（《Scientific Reports》, 2, 853 (2012), 目前已被引用190多次，ESI高被引论文；《Nanoscale》, 6, 7609 (2014), 目前已被引用120多次，ESI高被引论文）或者挖孔（《Scientific Reports》, 5, 9075 (2015)），也能打开硅烯能隙，并且可以有很高的电流开关比（105）。此外，我们还设计了基于硅烯的隧穿晶体管（《Nanoscale》, 6, 7609 (2014), 目前已被引用120多次，ESI高被引论文）。2016年，我们与北京理工大学姚裕贵教授、中科院物理所吴克辉研究员、大连理工赵纪军教授合作受邀撰写了目前硅烯的最完备的综述“Rise of silicene: a Competitive 2D Material”，发表在材料科学的顶级综述《Progress in Materials Science》, 83, 24 (2016)。研究工作发表后，引起广泛反响，很快成为ESI热点论文，目前已被SCI引用390多次。
2 系统精确模拟亚10 nm二维半导体晶体管
二维本征半导体可能比狄拉克材料更容易做成晶体管。亚10 nm晶体管的实验制备非常困难，成本巨大，用理论先行探索可以大大节约研制成本。先前的输运模拟基本基于半经验的方法，存在显著的误差。我们把精确的第一性原理量子输运方法引入到亚10 nm二维半导体晶体管性能的尺寸缩小行为（scaling）研究，并与国际半导体技术线路图（ITRS）进行对标。目前我们已经研了单层黑磷烯（BP烯）、砷烯(As烯)、锑烯 (Sb烯)、铋烯（Bi烯）、碲烯(Te烯)、硒化铟(InSe)、铋氧硒（Bi2O2Se）等晶体管的器件表现性能。
亚10 nm单/双层Bi2O2Se晶体管的性能极限
2017年由北京大学化学院彭海琳教授课题组首次制备成功的二维材料Bi2O2Se也具有超高的迁移率（室温下为450 cm2 V-1s-1，低温下能达到29000 cm2 V-1s-1），极低的有效质量（me* = 0.14m0）和高度稳定性这些优质特点。其块材、少层乃至单层易制备。基于这些优点，Bi2O2Se俨然有望成为继过渡金属二硫化物和IV族和V族烯之后，在新型二维纳电功能器件发展上的又一个二维半导体新星。我们基于第一性原理量子输运计算，研究并预测了单层和双层Bi2O2Se场效应晶体管在亚10纳米尺度上的性能表演极限。在获得和评估转移曲线、开关比、亚阈值摆幅、延迟时间等关键参数之后，我们发现双层Bi2O2Se n型场效应晶体管能够在门长5纳米的情况下满足国际半导体线路图未来十年高表现器件的需求；而单层Bi2O2Se n型和p型场效应晶体管则分别在门长2纳米和3纳米的情况下仍能满足未来高表现器件的要求。相关工作发表在《Nanoscale》, 11(2), 532-540 (2019)和《Advanced Electronic Materials》, 5(3), 1800720 (2019)。其中《Nanoscale》上的工作已经被引用超过75次，进入ESI高被引论文。
总结亚10 nm 二维半导体晶体管的研究，我们发现许多二维材料都能满足ITRS开电流的要求，支持了用2D 沟道材料延续摩尔定律的方案（可到2 nm）。我们发现高性能（HP）和低功耗（LP）二维器件的开电流与半导体带边有效质量变化的规律。有效质量在0.4-0.5 m0附近时候，开电流最小，较小或较大的有效质量均有利于开电流。
基于上述成果，我们应邀在物理学顶级综述期刊《Physics Reports》上以“Sub-10 nm two-dimensional transistors: theory and experiment”为题发表了72页的长篇综述(《Physics Reports》938, 1 (2021))。成为了ESI热点论文和高被引论文。
3 精确计算晶体管中二维半导体与金属界面的范式
与三维半导体材料不同，由于缺乏有效的掺杂手段，二维材料做器件，通常需要与金属电极接触注入电子，在金属半导体界面往往会形成肖特基势垒，极大影响着器件的性能，界面对二维材料可谓至关重要。诺贝尔物理学奖得主Kroemer说，“界面即器件”“The interface is the device”(《Reviews Of Modern Physics》, 73, 783 (2001))。《Nature Materials》发表编者按说“The interface is still the device.” （Editorial, 《Nature Materials》, 11, 91 (2012)）。《Nature Materials》的综述说：In the 2D limit, the properties of the interface — the chemical interaction between the metal and the SC — govern everything.（《Nature Materials》, 14, 1195 (2015)）。但常用的计算肖特基势垒方法主要单独计算电极和沟道的能带，没有考虑电极与沟道材料的强烈耦合带了的费米能钉扎效应，往往会低估了肖特基势垒。我们把能带方法与第一性原理量子输运模拟结合起来，充分考虑电极与沟道的耦合，通过计算空间能带图导出肖特基势垒高度（图3）。我们发现金属诱导的能隙态的普遍存在，导致费米能钉扎存在，常常给出增大的肖特基势垒高度。用这套模式，我们系统地对22种以上2D材料(涵盖V族烯，VI族烯，过渡金属二硫化物TMDs，III-VI族，III-V族，IV-VI族化合物)与金属(Au, Pd, Pt, Ag, Sc, Ti, Ni, Cr, Sb, Ir, In, Graphene, Co, Cu, Al, Tl, Mxene)在晶体管结构下界面性质进行了研究。该主题总计发表SCI论文24篇以上，有4篇论文成为ESI高被引论文（《Scientific Reports》, 6, 21786 (2016);《Chemistry of Materials》, 28, 2100 (2016);《Nanoscale》, 8, 1179 (2016)和《Nano Research》 11(2), 707-721 (2018)）。据此，我们以“Schottky barrier heights in two-dimensional field effect transistors: from theory to experiment”为题，撰写了二维半导体与金属界面肖特基势垒的综述（发表在物理的顶级综述期刊《Reports on Progress of Physics》（IF = 17.032））。成为ESI高被引论文。
单层/双层/三层黑磷与金属接触界面性质
通过对一系列vdw型接触和块状金属Ni(111)接触的对比研究，我们发现二维电极有改善BP晶体管性能的潜力(图4)。特别是，采用2D石墨烯电极的单层BP晶体管整体上表现出更大的开电流和更好的门控(减小的亚阈值摆幅(SS))。我们也解释了这种改善的内在原因。首先，石墨烯与单层BP之间的界面相互作用较弱，在电极-沟道界面只有少量金属诱导的界面态。因此，肖特基势垒的高度可以通过改变栅电压来调节。相比之下，块材镍电极的肖特基势垒很难通过栅电压进行调节。其次，低维电极对门电场的屏蔽作用减弱，相应的门对沟道的控制能力就增强了。
通过单层，双层和三层黑磷与金属接触界面性质研究，我们发现肖特基势垒的类型和高度取决于沟道半导体的层数。例如,铝和铬与单层和双层BP会在水平方向形成n型肖特基但是和三层BP则会形成p型水平肖特基接触。此外, 由于BP带隙随着层数增加而减小，因而肖特基势垒的高度相应也会随着BP的层数增加而降低。有趣的是，根据双层和三层 BP场效应晶体管的结果，可以发现具有强相互作用电极的N层2D半导体材料场效应晶体管的横向肖特基势垒的高度是可以通过其(N + 1)层半导体-金属接触的能带理论计算来推断。
相关研究文章发表于《Chemistry of Materials》， 28, 2100 (2016)；《Nanoscale》, 9, 14047-14057 (2017)；《ACS Applied Materials & Interfaces》, 9, 12694-12705 (2017)；《Nano Research》, 11(2), 707-721 (2018)。其中，单层和三层黑磷-金属界面的两个工作（《Chemistry of Materials》， 28, 2100 (2016)和《Nano Research》 11(2), 707-721 (2018)）进入ESI高被引论文，分别已经被引用超过120次和40次。
除此以外，关于MoS2、WSe2晶体管金属接触的2篇文章（《Scientific Reports》, 6, 21786 (2016)，《Nanoscale》, 8, 1179 (2016)，目前已经分别被引用160和90多次）也进入ESI高被引论文。这套研究二维晶体管肖特基势垒的范式，正被越来越多的组采用。
书：
Dispersion and separation of single-walled carbon nanotubes, Y. Maeda, T. Akaska, Jing Lu, and Shigeru Nagase, Chapter 14, Chemistry of Nanocarbons, John Wiley & Sons, Ltd. 2010
代表性文章：
1. High-performance sub-10 nm monolayer Bi2O2Se transistors, Ruge Quhe, Junchen Liu, Jinxiong Wu, Jie Yang, Yangyang Wang, Qiuhui Li, Tianran Li, Ying Guo, Jinbo Yang, Hailin Peng, Ming Lei, and Jing Lu*, Nanoscale 11(2), 532-540 (2019).
4. Dependence of excited-state properties of tellurium on dimensionality: From bulk to two dimensions to one dimensions, Yuanyuan Pan, Shiyuan Gao, Li Yang*, and Jing Lu*, Phys. Rev. B 98, 085135 (2018).
5. Valley Pseudospin with a Widely Tunable Bandgap in Doped Honeycomb BN Monolayer, Zhigang Song†, Ziwei Li†, Hong Wang, Xuedong Bai, Wenlong Wang, Honglin Du, Sunquan Liu, Changsheng Wang, Jingzhi Han, YingchangYang, Zheng Liu, Jing Lu*, Zheyu Fang*, Jinbo Yang*, Nano Lett. 17, 2079 (2017)
7. Monolayer Phosphorene Metal Contacts, Yuanyuan Pan, Yangyang Wang, Meng Ye, Ruge Quhe, Hongxia Zhong, Zhigang Song, Xiyou Peng, Dapeng Yu, Jinbo Yang, Junjie Shi, and Jing Lu*, Chemistry of Materials 28, 2100 (2016).
9. All-metallic Vertical Transistors Based on Stacked Dirac Materials, Yangyang Wang, Zeyuan Ni, Qihang Liu, Ruge Quhe, Jiaxin Zheng, Meng Ye, Dapeng Yu, Junjie Shi, Jinbo Yang, Ju Li, and Jing Lu*, Advanced Functional Materials 25, 68 (2015).
10. Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap, Zhigang Song, Cheng-Cheng Liu, Jinbo Yang*, Jingzhi Han, Meng Ye, Botao Fu, Yingchang Yang, Qian Niu, Jing Lu* & Yugui Yao*, NPG Asia Materials 6,e147 (2014)
11. Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates, Jiaxin Zheng,Yangyang Wang, Lu Wang, Ruge Quhe, Zeyuan Ni, Wai-Ning Mei, Zhengxiang Gao, Dapeng Yu, Junjie Shi, and Jing Lu*, Scientific Reports 3, 2081 (2013); doi:10.1038/srep02081.
12. Tunable and Sizable Band Gap of Single Layer Graphene Sandwiched between Hexagonal Boron Nitride, Ruge Quhe, Jiaxin Zheng, Guangfu Luo, Qihang Liu, Rui Qin, Jing Zhou, Dapeng Yu, Shigeru Nagase, Wai-Ning Mei, Zhengxiang Gao, and Jing Lu*, NPG Asia Materials 4, e6 (2012); doi:10.1038/am.2012.10.
14. Tunable band gap in silicene and germanene, Zeyuan Ni, Qihang Liu, Kechao Tang, Jiaxin Zheng, Jing Zhou, Rui Qin, Zhengxiang Gao, Dapeng Yu, Jing Lu*, Nano Lett. 12, 113 (2012).
15. Co–crystal of Paramagnetic Endohedral Metallofullerene La@C82 and Nickel Porphyrin with High Electronic Mobility, Satoru Sato*, Hidefumi Nikawa, Shu Seki, Lu Wang, Guangfu Luo, Jing Lu*, Masayuki Haranaka, Takahiro Tsuchiya, Shigeru Nagase* and Takeshi Akasaka*, Angewandte Chemie 7, 1589 (2012).
16. Tunable Charge-transport Property of Ih–C80 Endohedral Metallofullerenes: Investigation of La2@C80, Sc3N@C80, and Sc3C2@C80, Satoru Sato, Shu Seki* Guangfu Luo, Mitsuaki Suzuki, Jing Lu* Shigeru Nagase* and Takeshi Akasaka*, J. Am. Chem. Soc. 134, 11681（2012）.
17. Functionalized Graphene for High Performance Two-dimensional Spintronics Devices, Linze Li, Rui Qin, Hong Li, Lili Yu, Qihang Liu, Guangfu Luo, Zhengxiang Gao, and Jing Lu*, ACS NANO 4, 2061 (2011).
18. Semi-metallic Single-component Crystal of Soluble La@C82 Derivative with High Electron Mobility, Satoru Sato, Shu Seki, Yoshihito Honsho, Guangfu Luo, Lu Wang, Jing Lu, Hidefumi Nikawa, Masayuki Haranaka, Takahiro Tsuchiya, Shigeru Nagase and Takeshi Akasaka*,J. Am. Chem. Soc. 133, 2766 (2011).
19. Mixed Low-dimensional Nanomaterial: 2D MoS2 Inorganic Nanoribbons Encapsulated in Quasi-1D Carbon Nanotubes, Zhiyong Wang, Hong Li, Zheng Liu, Zujin Shi,* Jing Lu*, Kazu Suenaga,* Soon-Kil Joung, Toshiya Okazaki, Zhennan Gu, Jing Zhou, Zhengxiang Gao, Guangping Li, Stefano Sanvito, Enge Wang, and Sumio Iijima, J. Am. Chem. Soc. 132, 13840 (2010).
20. A facile, low-cost and scalable method of selective etching semiconducting single-walled carbon nanotubes by a gas reaction, Y. Liu*, H. Zhang, L. Cao, D. Wei, Dr. Y. Wang, H. Kajiura*, Dr. Y. Li, K. Noda,G. Luo, L. Wang, J. Zhou, J. Lu*, Z. Gao, Advanced Materials 21， 813 （2009）.
21. Novel One-Dimensional Organometallic Half Metals: Vanadium-Cyclopentadienyl, Vanadium-Cyclopentadienyl-Benzene, and Vanadium-Anthracene Wires: Lu Wang, Zixing Cai, Junyu Wang, Jing Lu*, Guangfu Luo, Lin Lai, Jing Zhou, Rui Qin, Zhengxiang Gao*, Dapeng Yu, Guangping Li, Wai Ning Mei, and Stefano Sanvito, Nano Lett. 8, 3640 (2008).
22. Selective interaction of large or charge-transfer aromatic molecules with metallic single-wall carbon nanotubes: critical role of the molecular size and orientation, Jing Lu*, Shigeru Nagase*, Xinwei Zhang, Dan Wang, Ming Ni, Yutaka Maeda, Takatsugu Wakahara, Tsukasa Nakahodo, Takahiro Tsuchiya, Takeshi Akasaka*, Zhengxiang Gao, Dapeng Yu, Hengqiang Ye, W. N. Mei, Yunsong Zhou, J. Am. Chem. Soc. , 128, 5114 (2006).
23. Large-Scale Separation of Metallic and Semiconducting Single-Walled Carbon Nanotubes, Yutaka Maeda, Shin-ichi Kimura, Makoto Kanda, Yuya Hirashima, Tadashi Hasegawa, Takatsugu Wakahara, Yongfu Lian, Tsukasa Nakahodo, Takahiro Tsuchiya, Takeshi Akasaka, Jing Lu, Xinwei Zhang, Zhengxiang Gao, Dapeng Yu,Shigeru Nagase, Said Kazaoui, Nobutsugu Minami, Tetsuo Shimizu, Hiroshi Tokumoto, Riichiro Saito, J. Am. Chem. Soc. 127, 10287 (2005).
24. Amphoteric and controllable doping of carbon nanotubes by encapsulation of organic and organometallic molecules, Jing Lu*, Shigeru Nagase*, Dapeng Yu, Hengqiang Ye, Rushan Han, Zhengxiang Gao, Shuang Zhang, Lianmao Peng, Physical Review Letters 93, 116804 (2004).
25. Structural and electronic properties of metal-encapsulated silicon clusters in a large size range, Jing Lu* and Nagase*, Physical Review Letters 90, 115506 (2003).
综述文章：
1. Sub-10 nm two-dimensional transistors: theory and experiment. Ruge Quhe†, Lin Xu†, Shiqi Liu†, Chen Yang†, Yangyang Wang†, Hong Li, Jie Yang, Qiuhui Li, Bowen Shi, Ying Li, Yuanyuan Pan, Xiaotian Sun, Jingzhen Li, Mouyi Weng, Han Zhang, Ying Guo, Linqiang Xu, Hao Tang, Jichao Dong, Jinbo Yang, Zhiyong Zhang, Ming Lei, Feng Pan, and Jing Lu*, Phys. Rep. 938, 1 (2021).
2. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment. Yangyang Wang†, Shiqi Liu†, Qiuhui Li†, Ruge Quhe†, Chen Yang, Ying Guo, Xiuying Zhang, Yuanyuan Pan, Jingzhen Li, Han Zhang, Lin Xu, Bowen Shi, Hao Tang, Ying Li, Jinbo Yang, Zhiyong Zhang, Lin Xiao*, Feng Pan*, Jing Lu*. Rep. Prog. Phys., 84 (5), 056501 (2021).
3. Rise of Silicene: a Competitive 2D Material, Progress in Materials Science, Jijun Zhao*, Hongsheng Liu, Zhiming Yu, Ruge Quhe, Si Zhou, Yangyang Wang, Cheng Cheng Liu, Hongxia Zhong, Nannan Han, Jing Lu*, Yugui Yao*, Kehui Wu* , Progress in Materials Science 83，24 (2016).
4. Silicene Transistors, Ruge Quhe, Yangyang Wang, and Jing Lu*, Chinese Physics B 24, 088105 (2015) (invited review).
5. Silicene on substrates: A theoretical perspective, HongXia Zhong, RuGe Quhe, YangYang Wang, JunJie Shi, Jing Lu*, Chinese Physics B 24, 087308 (2015) (invited review).
6. Modeling of stacked 2D materials and devices, Xiaofeng Qian, Yangyang Wang, Wenbin Li, Jing Lu, and Ju Li, 2D Materials 2, 032003(2015) (review).
7. Silicene Spintronics, Yangyang Wang, Ruge Quhe, Dapeng Yu, and Jing Lu*, Chinese Physics B 24, 087201 (2015) (invited review).
全部论文：
2022
1. Qiuhui Li, Shibo Fang, Shiqi Liu, Lin Xu, Linqiang Xu, Chen Yang, Jie Yang, Bowen Shi, Jiachen Ma, Jinbo Yang, Ruge Quhe, Jing Lu*, Performance Limit of Ultrathin GaAs Transistors. ACS Appl. Mater. Interfaces 14, 23597-23609 (2022).
2. Linqiang Xu, Ruge Quhe, Qiuhui Li, Shiqi Liu, Jie Yang, Chen Yang, Bowen Shi, Hao Tang, Ying Li, Xiaotian Sun, JinBo Yang, Jing Lu*, Device performance and strain effect of sub-5 nm monolayer InP transistors. J. Mater. Chem. C 10, 2223-2235 (2022).
3. Baochun Wu, Jie Yang, Ruge Quhe, Shiqi Liu, Chen Yang, Qiuhui Li, Jiachen Ma, Yuxuan Peng, Shibo Fang, Junjie Shi, Jinbo Yang, Jing Lu*, Honglin Du, Scaling Behavior of Magnetoresistance with the Layer Number in CrI3 Magnetic Tunnel Junctions. Phys. Rev. Appl. 17, 034030 (2022).
4. Yuhang Liu, Hong Li*, Fengbin Liu, Shuai Sun, Gang Zhou, Tao Qing, Shaohua Zhang, Jing Lu*, Engineering Schottky barrier in vertical graphene/InN heterostructure. Solid State Commun. 348-349, 114770 (2022).
5. Hong Li*, Yuhang Liu, Zhonghao Bai, Jie Xiong, Fengbin Liu, Gang Zhou, Tao Qing, Shaohua Zhang, Jing Lu*, Ohmic contact in graphene and hexagonal III-V monolayer (GaP, GaAs, InP, and InAs) van der Waals heterostructures: Role of electric field. Phys. Lett. A 433, 128029 (2022).
6. Qida Wang, Peipei Xu, Hong Li*, Fengbin Liu, Shuai Sun, Gang Zhou, Tao Qing, Shaohua Zhang, Jing Lu*, Device simulation of GeSe homojunction and vdW GeSe/GeTe heterojunction TFETs for high-performance application. J. Comput. Electron. 21, 401-410 (2022).
7. Jie Yang, Jun Zhou, Jing Lu, Zhaochu Luo, Jinbo Yang*, Lei Shen*, Giant tunnelling electroresistance through 2D sliding ferroelectric materials. Mater. Horiz. 9, 1422-1430 (2022).
8. Ying Guo*, Gaoyang Zhao*, Feng Pan, Ruge Quhe, Jing Lu*, The Interfacial Properties of Monolayer MX–Metal Contacts. J. Electron. Mater. (2022).
9. Shunning Li, Zhefeng Chen, Zhi Wang, Mouyi Weng, Jianyuan Li, Mingzheng Zhang, Jing Lu, Kang Xu, Feng Pan, Graph-based discovery and analysis of atomic-scale one-dimensional materials. Natl. Sci. Rev. 9, nwac028 (2022).
10. Guanghao Wei, Rui Hu, Qiuhui Li, Wenlong Lu, Hanyu Liang, Hexin Nan, Jing Lu, Juan Li, Qing Zhao, Oligonucleotide Discrimination Enabled by Tannic Acid-Coordinated Film-Coated Solid-State Nanopores. Langmuir 38, 6443-6453 (2022).
11. Shiying Guo, Hengze Qu, Wenhan Zhou, Shengyuan A. Yang, Yee Sin Ang, Jing Lu, Haibo Zeng, Shengli Zhang, High-Performance and Low-Power Transistors Based on Anisotropic Monolayer β-TeO2. Phys. Rev. Appl. 17, 064010 (2022).
2021
12. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment. Yangyang Wang†, Shiqi Liu†, Qiuhui Li†, Ruge Quhe†, Chen Yang, Ying Guo, Xiuying Zhang, Yuanyuan Pan, Jingzhen Li, Han Zhang, Lin Xu, Bowen Shi, Hao Tang, Ying Li, Jinbo Yang, Zhiyong Zhang, Lin Xiao*, Feng Pan*, Jing Lu*. Rep. Prog. Phys., 84 (5), 056501 (2021).
13. Sub-10 nm two-dimensional transistors: theory and experiment. Ruge Quhe†, Lin Xu†, Shiqi Liu†, Chen Yang†, Yangyang Wang†, Hong Li, Jie Yang, Qiuhui Li, Bowen Shi, Ying Li, Yuanyuan Pan, Xiaotian Sun, Jingzhen Li, Mouyi Weng, Han Zhang, Ying Guo, Linqiang Xu, Hao Tang, Jichao Dong, Jinbo Yang, Zhiyong Zhang, Ming Lei, Feng Pan, and Jing Lu*, Phys. Rep., 938:1-72 (2021).
14. Layer-Dependent Giant Magnetoresistance in Two-Dimensional CrPS4 Magnetic Tunnel Junctions. Jie Yang, Shibo Fang, Yuxuan Peng, Shiqi Liu, Baochun Wu, Ruge Quhe, Shilei Ding, Chen Yang, Jiachen Ma, Bowen Shi, Linqiang Xu, Xiaotian Sun, Guang Tian, Changsheng Wang, Junjie Shi, Jing Lu*, and Jinbo Yang*. Phys. Rev. Appl., 16(2):024011 (2021).
15. Performance limit of monolayer MoSi2N4 transistors. Xiaotian Sun†, Zhigang Song†, Nannan Huo, Shiqi Liu, Chen Yang, Jie Yang, Weizhou Wang and Jing Lu*. J. Mater. Chem. C, 9, 14683-14698 (2021).
16. Layer-Dependent Photoabsorption and Photovoltaic Effects in Two-Dimensional Bi2O2X (X = S, Se, and Te). Hao Tang, Bowen Shi, Yangyang Wang, Chen Yang, Shiqi Liu, Ying Li, Ruge Quhe, and Jing Lu*. Phys. Rev. Appl., 15(6):064037 (2021).
17. Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length? Lin Xu, Jie Yang, Chenguang Qiu, Shiqi Liu, Weijun Zhou, Qiuhui Li, Bowen Shi, Jiachen Ma, Chen Yang, Jing Lu*, and Zhiyong Zhang*. ACS Appl. Mater. Interfaces., 13(27):31957-31967 (2021).
18. Device performance limit of monolayer SnSe2 MOSFET. Hong Li*, Jiakun Liang, Qida Wang, Fengbin Liu, Gang Zhou, Tao Qing, Shaohua Zhang, and Jing Lu*. Nano Res., (2021). DOI: 10.1007/s12274-021-3785-1
19. Phase transition and topological transistors based on monolayer Na3Bi nanoribbons. Bowen Shi, Hao Tang, Zhigang Song, Jingzhen Li, Lianqiang Xu, Shiqi Liu, Jie Yang, Xiaotian Sun, Ruge Quhe, Jinbo Yang, and Jing Lu*. Nanoscale., 13(35):15048-15057 (2021).
20. Improvement of alkali metal ion batteries via interlayer engineering of anodes: from graphite to graphene. Jiachen Ma†, Chen Yang†, Xinjie Ma, Shiqi Liu, Jie Yang, Linqiang Xu, Jingsong Gao, Ruge Quhe, Xiaotian Sun, Jinbo Yang, Feng Pan, Xiaoyu Yang*, and Jing Lu*. Nanoscale., 13(29):12521-12533 (2021).
21. Sub-5 nm Gate Length Monolayer MoTe2 Transistors. Qiang Li†, Jie Yang†, Qiuhui Li†, Shiqi Liu†, Linqiang Xu, Chen Yang, Lin Xu, Ying Li, Xiaotian Sun, Jinbo Yang, and Jing Lu*. J. Phys. Chem. C., 125(35):19394-19404 (2021).
22. Ultrathin Fe2P nanosheet co-catalyst CdS nanorod: The promising photocatalyst with ultrahigh photocatalytic H-2 production activity. Zhibin Liang, Chen Yang, Jing Lu*, and Xinfa Dong*. Appl. Surf. Sci., 566:150732 (2021).
23. Is graphite nanomesh a promising anode for the Na/K-Ions batteries? Chen Yang, Xiaotian Sun, Xiuying Zhang, Jingzhen Li, Jiachen Ma, Ying Li, Linqiang Xu, Shiqi Liu, Jie Yang, Shibo Fang, Qiuhui Li, Xiaoyu Yang*, Feng Pan, Jing Lu*, Dapeng Yu. Carbon, 176, 242-252 (2021).
24. Sub-5 nm Monolayer MoS2 Transistors toward Low-Power Devices. Han Zhang*, Bowen Shi, Lin Xu, Junfeng Yan, Wu Zhao, Zhiyong Zhang, Zhiyong Zhang, Jing Lu*. ACS Appl. Electron. Mater., 3 (4), 1560-1571 (2021).
25. Can ultra-thin Si FinFETs work well in the sub-10 nm gate-length region? Shiqi Liu, Jie Yang, Lin Xu, Jingzhen Li, Chen Yang, Ying Li, Bowen Shi, Yuanyuan Pan, Linqiang Xu, Jiachen Ma, Jinbo Yang, Jing Lu*. Nanoscale, 13 (10), 5536-5544 (2021).
26. Two-dimensional materials as a stabilized interphase for the solid-state electrolyte Li10GeP2S12 in lithium metal batteries. Jiachen Ma, Ruge Quhe*, Zheyu Zhang, Chen Yang, Xiuying Zhang, Jingzhen Li, Lin Xu, Jie Yang, Bowen Shi, Shiqi Liu, Linqiang Xu, Xiaotian Sun, Jing Lu*. J. Mater. Chem. A, 9 (8), 4810-4821 (2021).
27. Layer-Controlled Low-Power Tunneling Transistors Based on SnS Homojunction. Jiakun Liang, Hong Li*, Fengbin Liu, Jing Lu*. Adv. Theory Simul., 4 (5), 2000290 (2021).
28. Van der waals BP/InSe heterojunction for tunneling field-effect transistors. Hong Li*, Qida Wang, Peipei Xu, Jing Lu*. J. Mater. Sci., 56 (14), 8563-8574 (2021).
29. Bilayer Tellurene: A Potential p-Type Channel Material for Sub-10 nm Transistors. Qiuhui Li, Lin Xu, Shiqi Liu, Jie Yang, Shibo Fang, Ying Li, Jiachen Ma, Zhiyong Zhang, Ruge Quhe, Jinbo Yang, Jing Lu*. Adv. Theory Simul., 4 (2), 2000252 (2021).
30. High-Performance Spin Filters and Spin Field Effect Transistors Based on Bilayer VSe2. Baochun Wu, Ruge Quhe, Jie Yang, Shiqi Liu, Junjie Shi, Jing Lu*, Honglin Du*. Adv. Theory Simul., 4 (2), 2000238 (2021).
31. An air-stable iron/manganese-based phosphate cathode for high performance sodium-ion batteries. Ning Wang, Jiachen Ma, Zhaolu Liu, Jie Xu, Deqiang Zhao, Nan Wang, Chen Yang, Yongjie Cao*, Jing Lu*, JunxiZhang*. Chem. Eng. J. 133798(2021).
32. Laser ablation of pristine Fe foil for constructing a layer-by-layer SiO2/Fe2O3/Fe integrated anode for high cycling-stability lithium-ion batteries. Zhongyuan Zhang†, Chen Yang†, Canfeng Fang, Wenfei Yang, Xue Zhang, Zhiguo Rong, Xiyang Li, Youngguan Jung, Jing Lu, Xinglong Dong*. Phys. Chem. Chem. Phys., 23 (17), 10365-10376 (2021).
33. Correlating the electronic structures of metallic/semiconducting MoTe2 interface to its atomic structures. Bo Han, Chen Yang, Xiaolong Xu, Yuehui Li, Ruochen Shi, Kaihui Liu, Haicheng Wang*, Yu Ye*, Jing Lu, Dapeng Yu, Peng Gao*. Natl. Sci. Rev., 8 (2) (2021).
34. Valley pseudospin in monolayer MoSi2N4 and MoSi2As4. Chen Yang, Zhigang Song*, Xiaotian Sun, Jing Lu. Phys. Rev. B, 103 (3), 035308 (2021).
35. Reaction Mechanism and Structural Evolution of Fluorographite Cathodes in Solid-State K/Na/Li Batteries. Zhengping Ding*, Chen Yang, Jian Zou, Shulin Chen, Ke Qu, Xiumei Ma, Jingmin Zhang, Jing Lu, Weifeng Wei, Peng Gao*, Liping Wang*. Adv. Mater., 33 (3), 2006118 (2021).
36. In situ TEM revealing the effects of dislocations on lithium-ion migration in transition metal dichalcogenides. Ruiwen Shao*†, Chengkai Yang†, Chen Yang, Shulin Chen, Weikang Dong, Bairong Li, Xiumei Ma, Jing Lu, Lixin Dong, Peng Gao*, Dapeng Yu. J. Energy Chem., 58, 280-284 (2021).
37. Bulk and surface degradation in layered Ni-rich cathode for Li ions batteries: Defect proliferation via chain reaction mechanism. Chengkai Yang*, Ruiwen Shao*, Qian Wang, Tianyi Zhou, Jing Lu, Ning Jiang, Peng Gao, Wen Liu, Yan Yu*, and Henghui Zhou*. Energy Storage Mater., 35:62-69 (2021).
38. Anomalous heavy doping in chemical-vapor-deposited titanium trisulfide nanostructures. Mengxing Sun, Jingzhen Li, Qingqing Ji*, Yuxuan Lin, Jiangtao Wang, Cong Su, Ming-Hui Chiu, Yilin Sun, Huayan Si, Tomás Palacios, Jing Lu, Dan Xie*, and Jing Kong*. Phys. Rev. Mater., 5(9):094002 (2021).
39. Oxygen Vacancy-Induced Nonradical Degradation of Organics: Critical Trigger of Oxygen (O2) in the Fe–Co LDH/Peroxymonosulfate. Liying Wu, Zhiqiang Sun*, Yufei Zhen, Shishu Zhu, Chen Yang, Jing Lu, Yu Tian, Dan Zhong, Jun Ma*. System. Environ. Sci. Technol., 55(22):15400-15411 (2021).
2020
40. A New Polyanion Na3Fe2(PO4)P2O7 Cathode with High Electrochemical Performance for Sodium-Ion Batteries, Yongjie Cao†, Chen Yang†, Yao Liu, Xiuping Xia, Deqiang Zhao, Yuanjie Cao, Haishen Yang, Junxi Zhang*, Jing Lu* and Yongyao Xia*, ACS Energy Lett., 5, 3788-3796 (2020)
41. Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves, Jie Yang, Ruge Quhe, Shiqi Liu, Yuxuan Peng, Xiaotian Sun, Liang Zha, Baochun Wu, Bowen Shi, Chen Yang, Junjie Shi, Guang Tian, Changsheng Wang, Jing Lu* and Jinbo Yang*, Phys. Chem. Chem. Phys., 22, 25730-25739 (2020)
42. Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation, Yuanyuan Pan, Jingrou Dai, Lin Xu, Jie Yang, Xiuying Zhang, Jiahuan Yan, Jingzhen Li, Bowen Shi, Shiqi Liu, Han Hu, Mingbo Wu* and Jing Lu*, Phys. Rev. Appl. 14, 024016 (2020)
43. Direct Observation of Li Migration into V5S8: Order to Antisite Disorder Intercalation Followed by the Topotactic-Based Conversion Reaction, Shulin Chen†, Chen Yang†, Ruiwen Shao, Jingjing Niu, Mei Wu, Jian Cao, Xiumei Ma, Jicai Feng, Xiaosong Wu, Jing Lu*, Liping Wang*, Junlei Qi*, Peng Gao*, ACS Appl. Mater. Interfaces 12 (32), 36320-36328 (2020).
44. Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device, Ying Guo, Feng Pan, Gaoyang Zhao, Yajie Ren, Binbin Yao, Hong Li, Jing Lu*, Nanoscale 12 (28), 15443-15452 (2020).
45. Crepe Cake Structured Layered Double Hydroxide/Sulfur/Graphene as a Positive Electrode Material for Li-S Batteries, Shengtang Liu, Xiuying Zhang, Shitao Wu, Xi Chen, Xiaojing Yang, Wenbo Yue*, Jing Lu*, Wuzong Zhou*, ACS nano 14 (7), 8220–8231 (2020).
46. Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart, Xiaotian Sun*, Lin Xu, Yu Zhang, Weizhou Wang*, Shiqi Liu, Chen Yang, Zhiyong Zhang, Jing Lu*, ACS Appl. Mater. Interfaces 12, 20633-20644 (2020).
47. Holey graphite: A promising anode material with ultrahigh storage for lithium-ion battery, Chen Yang†, Xiuying Zhang†, Jingzhen Li, Jiachen Ma, Linqiang Xu, Jie Yang, Shiqi Liu, Shibo Fang, Ying Li, Xiaotian Sun, Xiaoyu Yang, Feng Pan, Jing Lu*, Dapeng Yu, Electrochim. Acta 346, 136244 (2020).
48. First-principles simulation of monolayer hydrogen passivated Bi2O2S2-metal interfaces, Linqiang Xu†, Shiqi Liu†, Han Zhang, Xiuying Zhang, Jingzhen Li, Jiahuan Yan, Bowen Shi, Jie Yang, Chen Yang, Lianqiang Xu, Xiaotian Sun, Jing Lu*, Phys. Chem. Chem. Phys. 22, 7853-7863 (2020).
49. Monolayer Honeycomb Borophene: A Promising Anode Material with a Record Capacity for Lithium-Ion and Sodium-Ion Batteries, Jingzhen Li, Georgios A. Tritsaris, Xiuying Zhang, Bowen Shi, Chen Yang, Shiqi Liu, Jie Yang, Linqiang Xu, Jinbo Yang, Feng Pan, Efthimios Kaxiras*, Jing Lu*, J. Electrochem. Soc. 167, 090527 (2020).
50. Ohmic contact in graphene/SnSe2 Van Der Waals heterostructures and its device performance from ab initio simulation. Hong Li*, Peipei Xu, Jiakun Liang, Fengbin Liu, Jing Luo, Jing Lu*, J. Mater. Sci. 55, 4321-4331 (2020).
51. Ohmic contacts of monolayer Tl2O field-effect transistors, Yuanyuan Pan, Jingrou Dai, Zihui Liu, Mingbo Wu*, Han Hu*, Jing Lu*, J. Mater. Sci. 55, 11439–11450 (2020).
52. Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors, Peipei Xu, Jiakun Liang, Hong Li*, Fengbin Liu, Jun Tie, Zhiwei Jiao, Jing Luo, Jing Lu*, Rsc Adv. 10, 16071-16078 (2020).
53. Two-dimensional single-layer PC6 as promising anode materials for Li-ion batteries: The first-principles calculations study, Jianning Zhang, Lianqiang Xu, Chen Yang, Xiuying Zhang, Ling Ma*, Min Zhang, Jing Lu*, Appl. Surf. Sci. 510, 145493 (2020).
54. Ultrahigh Capacity of Monolayer Dumbbell C4N as a Promising Anode Material for Lithium-Ion Battery, Chen Yang, Xiuying Zhang, Jiachen Ma, Bowen Shi, Han Zhang, Linqiang Xu, Jie Yang, Shiqi Liu, Ruge Quhe, Feng Pan, Jing Lu*, Dapeng Yu, J. Electrochem. Soc. 167, 020538 (2020).
55. Planar Direction-Dependent Interfacial Properties in Monolayer In2Se3-Metal Contacts, Chen Yang, Xiuying Zhang, Xiaotian Sun, Han Zhang, Hao Tang, Bowen Shi, Hua Pang, Linqiang Xu, Shiqi Liu, Jie Yang, Jiahuan Yan, Lin Xu, Zhiyong Zhang, Jinbo Yang, Dapeng Yu, Jing Lu*, Phys. Status Solidi B: Basic Solid State Physics 257, 1900198 (2020).
56. Imprinting Ferromagnetism and Superconductivity in Single Atomic Layers of Molecular Superlattices, Zejun Li†, Xiuying Zhang†, Xiaoxu Zhao, Jing Li, Tun Seng Herng, Haomin Xu, Fanrong Lin, Pin Lyu, Xinnan Peng, Wei Yu, Xiao Hai, Cheng Chen, Huimin Yang, Jens Martin, Jing Lu, Xin Luo, A. H. Castro Neto, Stephen J. Pennycook, Jun Ding, Yuanping Feng, Jiong Lu*, Adv. Mater. 1907645 (2020).
57. Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN, Wenhan Zhou, Shengli Zhang*, Shiying Guo, Yangyang Wang, Jing Lu, Xing Ming, Zhi Li, Hengze Qu, Haibo Zeng*, Phys. Rev. Appl. 13, 044066 (2020).
2019
58. High-performance sub-10 nm monolayer Bi2O2Se transistors, Ruge Quhe*, Junchen Liu, Jinxiong Wu, Jie Yang, Yangyang Wang, Qiuhui Li, Tianran Li, Ying Guo, Jinbo Yang, Hailin Peng, Ming Lei* and Jing Lu*, Nanoscale, 11, 532-540 (2019). ESI Highly Cited Paper
59. A sub-10 nm monolayer ReS2 transistor for low-power applications, Ruge Quhe*, Jianxiu Chen and Jing Lu*, J. Mater. Chem. C, 7. 1 imaging the st604 (2019).
60. Pervasive Ohmic Contacts in Bilayer Bi2O2Se-Metal Interfaces, Xu, Lianqiang; Liu, Shiqi; Yang, Jie; Shi, Bowen; Pan, Yuanyuan; Zhang, Xiuying; Li, Hong; Yan, Jiahuan; Li, Jingzhen; Xu, Linqiang; Yang, Jinbo; Lu, Jing*, J. Phys. Chem C 123(14), 8923-8931 (2019).
61. Sub 10 nm Bilayer Bi2O2Se Transistors. Jie Yang, Ruge Quhe, Qiuhui Li, Shiqi Liu, Lianqiang Xu, Yuanyuan Pan, Han Zhang, Xiuying Zhang, Jingzhen Li, Jiahuan Yan, Bowen Shi, Hua Pang, Lin Xu, Zhiyong Zhang, Jing Lu* and Jinbo Yang*, Adv. Electron. Mater. 5, 1800720 (2019).
62. Unusual Fermi‐Level Pinning and Ohmic Contact at Monolayer Bi2O2Se–Metal Interface, Shiqi Liu, Lianqiang Xu, Yuanyuan Pan, Jie Yang, Jingzhen Li, Xiuying Zhang, Lin Xu, Hua Pang, Jiahuan Yan, Bowen Shi, Xiaotian Sun, Han Zhang, Linqiang Xu, Jinbo Yang, Zhiyong Zhang, Feng Pan* and Jing Lu*, Adv. Theory Simul. 2, 1800178 (2019).
63. Schottky Contact in Monolayer WS2 Field‐Effect Transistors, Hao Tang, Bowen Shi, Yuanyuan Pan, Jingzhen Li, Xiuying Zhang, Jiahuan Yan, Shiqi Liu, Jie Yang, Lianqiang Xu, Jinbo Yang, Mingbo Wu and Jing Lu*, Adv. Theory Simul. 2, 1900001 (2019).
64. Sub-10 nm vertical tunneling transistors based on layered black phosphorene homojunction, Hong Li*, Jing Lu*, Applied Surface Science, 465 (28) 895-901 (2019).
65. Sub-10 nm Tunneling Field Effect Transistors Based on Monolayer Group-IV Mono-Chalcogenides, Hong Li*, Peipei Xu, and Jing Lu*, Nanoscale 11, 23392 (2019).
66. Excellent Device Performance of Sub-5-nm Monolayer Tellurene Transistors, Jiahuan Yan, Hua Pang, Lin Xu, Jie Yang, Ruge Quhe, Xiuying Zhang, Yuanyuan Pan, Bowen Shi, Shiqi Liu, Lianqiang Xu, Jinbo Yang, Feng Pan, Zhiyong Zhang, and Jing Lu*, Adv. Electron. Mater. 5, 1900226 (2019).
67. Directly imaging the structure–property correlation of perovskites in crystalline microwires, Xiao-Wei Zhang, Zhen-Qian Yang, Jing-Zhen Li, Yu-Hao Deng, Yu-Min Hou, Yi-Fei Mao, Jing Lu*, and Ren-Min Ma*, J. Mater. Chem. A 7(21), 13305-13314 (2019).
68. Monolayer GaS with high ion mobility and capacity as a promising anode battery material, Xiuying Zhang, Chen Yang, Yuanyuan Pan, Mouyi Weng, Linqiang Xu, Shiqi Liu, Jie Yang, Jiahuan Yan, Jingzhen Li, Bowen Shi, Jinbo Yang, Jiaxin Zheng, Feng Pan, and Jing Lu*, J. Mater. Chem. A, 7, 14042–14050 (2019).
69. Sub‑5 nm Monolayer BiH Transistors, Meng Ye, Shiqi Liu, Han Zhang, Bowen Shi, Jingzhen Li, Xiuying Zhang, Jiahuan Yan, and Jing Lu*, ACS Appl. Elec. Mater. 1, 2103 (2019).
70. Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors, Lin Xu, Yuanyuan Pan, Shiqi Liu, Bowen Shi, Jie Yang, Jiahuan Yan, Hua Pang, Xiuying Zhang, Chen Yang, Jinbo Yang, Yangyang Wang, Zhiyong Zhang*, and Jing Lu*, ACS Appl. Nano mater. 2, 6898 (2019).
71. Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field Effect Transistors, Yuanyuan Pan, Jihuan Gu, Hao Tang, Xiuying Zhang, Jingzhen Li, Bowen Shi, Jie Yang, Han Zhang, Jiahuan Yan, Shiqi Liu, Han Hu, Mingbo Wu, Jing Lu*,
ACS Appl. Nano mater. 2, 4717 (2019).
72. Adsorption and Diffusion of Lithium on Layered InSe, Xiuying Zhang, Sibai Li, Jingzhen Li, Meng Ye, Zhigang Song, Shan Jin, Bowen Shi, Yangyang Wang*, Jiaxin Zheng*, Feng Pan*, Jing Lu*, Comp. Condense Matter 21, e00404 (2019).
73. Bilayer tellurene-metal interfaces, Hua Pang, Jiahuan Yan, Jie Yang, Shiqi Liu, Yuanyuan Pan, Xiuying Zhang, Jinbo Yang, Qihang Liu, Lianqiang Xu, Yangyang Wang, and Jing Lu*, Journal of Semiconductors 40(6), 062003-062003-10 (2019).
74. Interfacial properties of monolayer antimonene devices, Han Zhang, Junhua Xiong, Meng Ye, Jingzhen Li, Xiuying Zhang, Ruge Quhe, Zhigang Song, Jinbo Yang, Qiaoxuan Zhang, Bowen Shi, Jiahuan Yan, Wanlin Guo, John Robertson, Yangyang Wang*, Feng Pan*, Jing Lu*, Phys. Rev. Appl. 11, 064001 (2019).
75. Negative capacitance tunneling field effect transistors based on monolayer arsenene, antimonene, and bismuthene, Hong Li, Peipei Xu, Lin Xu, Zhiyong Zhang and Jing Lu*, Semicond. Sci. Technol. 34 085006 (2019).
76. Anisotropic interfacial properties of monolayer GeSe—metal contacts, Ying Guo, Feng Pan, Yajie Ren, Yangyang Wang, Binbin Yao, Gaoyang Zhao and Jing Lu*, Semicond. Sci. Technol. 34, 095021 (2019).
77. Nitrofullerene, a C60-based Bifunctional Additive with Smoothing and Protecting Effects for Stable Lithium Metal Anode, Zhipeng Jiang, Ziqi Zeng, Chengkai Yang, Zhilong Han, Wei Hu, Jing Lu and Jia Xie, Nano Lett. 19, 8780 (2019).
78. Dendrite-Free Lithium Deposition via a Superfilling Mechanism for High-Performance Li-Metal Batteries, Qian Wang, Chengkai Yang, Jijin Yang, Kai Wu, Cejun Hu, Jing Lu, Wen Liu, Xiaoming Sun, Jingyi Qiu, and Henghui Zhou, Adv. Mater. 31, 1903248 (2019).
79. Surface-Based Li+ Complex Enables Uniform Lithium Deposition for Stable Lithium Metal Anodes, Qian Wang, Chengkai Yang, Yufei Zhang, JiJin Yang, Kai Wu, Cejun Hu, Jing Lu, Wen Liu and Henghui Zhou, ACS Appl. Energy Mater. 2, 4602−4608 (2019).
80. Tracking sodium migration in TiS2 using in situ TEM, Bo Han, Shulin Chen, Jian Zou, Ruiwen Shao, Zhipeng Dou, Chen Yang, Xiumei Ma, Jing Lu, Kaihui Liu, Dapeng YuLiping Wang, Haicheng Wang* and Peng Gao, Nanoscale, 11, 7474 (2019).
81. Graphene Acoustic Phonon-Mediated Pseudo-Landau Levels Tailoring Probed by Scanning Tunneling Spectroscopy, Cheng Chi, Bowen Shi, Cong Liu, Yimin Kang, Li Lin, Meiling Jiang, Jing Lu, Bo Shen, Feng Lin, Hailin Peng, Zheyu Fang, Small 1905202 (2019).
2018
82. Spontaneous valley splitting and valley pseudospin field effect transistors of monolayer VAgP2Se6，Zhigang Song, Xiaotian Sun, Jiaxin Zheng, Feng Pan, Yanglong Hou, Man-Hong Yung, Jinbo Yang* and Jing Lu*, Nanoscale, 10. 13986 (2018)
83. N-type Ohmic contact and p-type Schottky contact of monolayer InSe transistors, Bowen Shi, Yangyang Wang, Jingzhen Li, Xiuying Zhang, Jiahuan Yan, Shiqi Liu, Jie Yang, Yuanyuan Pan, Han Zhang, Jinbo Yang, Feng Pan* and Jing Lu*, Phys. Chem. Chem. Phys., 20(38), 24641-24651 (2018).
84. Sub-5 nm monolayer black phosphorene tunneling transistors, Hong Li*, Bowen Shi, Yuanyuan Pan, Jingzhen Li, Lin Xu, Lianqiang Xu, Zhiyong Zhang, Feng Pan and Jing Lu*, Nanotechnology, 29, 485202 (2018).
85. N- and p-Type Ohmic Contacts at Monolayer Gallium Nitride-Metal Interfaces, Ying Guo, Feng Pan, Yajie Ren, Binbin Yao, Chuanghua Yang, Meng Ye, Yang Yang Wang, Jingzhen Li, Xiuying zhang, Jiahuan Yan, Jin-Bo Yang and Jing Lu*, Phys. Chem. Chem. Phys., 20(37), 24239-24249 (2018).
86. Dependence of excited-state properties of tellurium on dimensionality: From bulk to two dimensions to one dimensions, Yuanyuan Pan, Shiyuan Gao, Li Yang*, and Jing Lu*, Phys. Rev. B 98, 085135 (2018).
87. Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors, Ruge Quhe, Qiuhui Li, Qiaoxuan Zhang, Yangyang Wang, Han Zhang, Jingzhen Li, Xiuying Zhang, Dongxue Chen, Kaihui Liu, Yu Ye, Lun Dai, Feng Pan, Ming Lei, and Jing Lu*, Phys. Rev. Appl. 10(2), 024022 (2018).
88. Sub-5 nm Monolayer Arsenene and Antimonene Transistors, Xiaotian Sun, Zhigang Song, Yangyang Wang, Youyong Li, Weizhou Wang, Jing Lu*, ACS: Applied Materials & Interfaces, 10(26), 22363 (2018).
89. Many-body Effect and Device Performance Limit of Monolayer InSe, Yangyang Wang, Ruixiang Fei, Ruge Quhe, Jingzhen Li, Han Zhang, Xiuying Zhang, Bowen Shi, Lin Xiao, Zhigang Song, Jinbo Yang, Jun-jie Shi, Feng Pan*, and Jing Lu*, ACS Applied Materials & Interfaces, 10(27), 23344 (2018).
90. Monolayer Tellurene—Metal Contacts, Jiahuan Yan †, Xiuying Zhang †, Yuanyuan Pan, Jingzhen Li, Bowen Shi, Shiqi Liu, Jie Yang, Zhigang Song, Han Zhang, Meng Ye, Ruge Quhe, Yangyang Wang, Jinbo Yang, Feng Pan* and Jing Lu*, Journal of Materials Chemistry C, 6, 6153-6163 (2018).
91. Gate-tunable interfacial properties of in-plane ML MX2 1T’–2H heterojunctions, Shiqi Liu†, Jingzhen Li †, Bowen Shi, Xiuying Zhang, Yuanyuan Pan, Meng Ye, Ruge Quhe, Yangyang Wang, Han Zhang, Jiahuan Yan, Linqiang Xu, Ying Guo, Feng Pan* and Jing Lu*, Journal of Materials Chemistry C, 6, 5651 (2018).
92. Ohmic contacts between monolayer WSe2 and two-dimensional titanium carbides, Qiuhui Li†, Jie Yang†, Ruge Quhe*, Qiaoxuan Zhang, Lin Xu, Yuanyuan Pan, Ming Lei*, and Jing Lu*, Carbon, 135, 125 (2018).
93. Three layer Phosphorene—Metal Interfaces, Xiuying Zhang†, Yuanyuan Pan†, Meng Ye, Ruge Quhe, Yangyang Wang, Ying Guo, Han Zhang, Yang Dan, Zhigang Song, Jinbo Yang Wanlin Guo, and Jing Lu*, Nano Research, 11, 707 (2018).
94. Electrical Contacts in Monolayer Blue Phosphorene Devices, Jingzhen Li,† Xiaotian Sun,† Chengyong Xu, † Xiuying Zhang, Yuanyuan Pan, Meng Ye, Zhigang Song, Ruge Quhe, Yangyang Wang, Han Zhang, Ying Guo, Jinbo Yang, Feng Pan* and Jing Lu*, Nano Research, 11, 1834 (2018).
95. High-performance sub-10 nm monolayer black phosphorene tunneling transistors, Hong Li*, Jun Tie, Jingzhen Li, Meng Ye, Han Zhang, Xiuying Zhang, Yuanyuan Pan, Yangyang Wang, Ruge Quhe, Feng Pan*, and Jing Lu*, Nano Research, 11, 2658 (2018).
96. Interfacial Properties of Monolayer SnS-Metal Contacts, Sibai Li†, Weiji Xiao†, Yuanyuan Pan†, Jianshu Jie, Chao Xin, Jiaxin Zheng*, Jing Lu*, and Feng Pan*, Journal of Physical Chemistry C, 122(23),12322 (2018).
97. Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity, Y. Wan, J. Xiao, J. Z. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. G. Song, H. Zhang, Y. L. Wang, M. Zhao, J. Lu, N. Tang, G. Z. Ran, X. Zhang, Y. Ye,* L. Dai*, Advanced Materials, 30, 1703888 (2018).
98. Direct Observation of Semiconductor−Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization, Bo Lei†, Yuanyuan Pan†, Zehua Hu†, Jialin Zhang, Du Xiang, Yue Zheng, Rui Guo, Cheng Han, Lianhui Wang, Jing Lu, Li Yang*, and Wei Chen*, ACS Nano, 12, 2070 (2018).
99. Enhancement of Photoluminescence and Hole Mobility in 1- to 5-Layer InSe due to the Top Valence-Band Inversion: Strain Effect, Meng Wu, Jun-jie Shi, Min Zhang, Pu Hang, Yi-min Ding, Hui Wang, Yu-lang Cen, Shu-hang Pan, Jing Lu, and Congxin Xia, Nanoscale, 10(24), 11441 (2018).
100. SnO2 quantum dots @ 3D sulfur-doped reduced graphene oxides as active and durable anode for lithium ion batteries, Kai Wu, Bowen Shi, Liya Qi, Yingying Mi, Binglu Zhao, Chengkai Yang, Qian Wang, Hui Tang, Jing Lu, Wen Liu*, Henghui Zhou*, Electrochim. Acta, 291, 24-30 (2018).
2017
101. Valley Pseudospin with a Widely Tunable Bandgap in Doped Honeycomb BN Monolayer, Zhigang Song, Ziwei Li, Hong Wang. Xuedong Bai, Wenlong Wang, Honglin Du, Sunquan Liu, Changsheng Wang, Jingzhi Han, Yingchang Yang, Zheng Liu, Jing Lu*, Zheyu Fang*, and Jinbo Yang*, Nano Letters 17, 2079 (2017).
102. Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene, Yangyang Wang, Pu Huang, Meng Ye, Ruge Quhe, Yuanyuan Pan, Han Zhang, Hongxia Zhong, Junjie Shi*, Jing Lu*, Chemistry of Materials 29, 2191 (2017).
103. Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough? Ruge Quhe*, Xiyou Peng, Yuanyuan Pan, Meng Ye, Yangyang Wang, Han Zhang, Shenyan Feng, Qiaoxuan Zhang, Junjie Shi, Jinbo Yang, Dapeng Yu, Ming Lei*, and Jing Lu*, ACS: Applied Materials & Interfaces 9, 3959-3966 (2017).
104. Schottky Barriers in Bilayer Phosphorene Transistors, Yuanyuan Pan†, Yang Dan†, Yangyang Wang*, Meng Ye, Han Zhang, Ruge Quhe, Xiuying Zhang, Jingzhen Li, Wanlin Guo, Li Yang, and Jing Lu*, ACS: Applied Materials & Interfaces 9, 12694 (2017).
105. Monolayer Bismuthene-Metal Contacts：a Theoretical Study, Ying Guo*, Feng Pan, Meng Ye, Xiaotian Sun, Yangyang Wang*, Jingzhen Li, Xiuying Zhang, Han Zhang, Yuanyuan Pan, Zhigang Song, Jinbo Yang, Jing Lu*, ACS: Applied Materials & Interfaces 9, 2318, 2017.
106. Electrical Contacts in Monolayer Arsenene Devices, Yangyang Wang, * Meng Ye, † Mouyi Weng, Jingzhen Li, Xiuying Zhang, Han Zhang, Ying Guo, Yuanyuan Pan, Lin Xiao, Junku Liu, Feng Pan,* and Jing Lu*, ACS: Applied Materials & Interfaces 9, 2927, 2017.
107. Black Phosphorus Transistors with van der Waals–type Electrical Contacts, Ruge Quhe, Yangyang Wang, Meng Ye, Qiaoxuan Zhang, Jie Yang, Ming Lei* and Jing Lu*, Nanoscale 9, 14047 (2017).
108. Interfacial properties of borophene contacts with two-dimensional semiconductors, Jie Yang, Ruge Quhe*, Shenyan Feng, Zhang, Qiaoxuan Zhang, Ming Lei*, Jing Lu*, Phys Chem Chem Phys. 19, 23982 (2017).
109. A Computational Study of Monolayer 2H WTe2 - Metal Interfaces, Chol So†, Han Zhang†, Yangyang Wang, † Meng Ye, Yuanyuan Pan, Ruge Quhe, JingZhen Li, Xiuying Zhang, Yunsong Zhou, Jing Lu*, Phys. Status Solidi B, 1600837 (2017).
110. Electronic properties of layered phosphorus heterostructures, Ruge Quhe, Shenyan Feng, Jing Lu and Ming Lei*, Phys Chem Chem Phys. 19, 1229（2017).
111. Electronic and Magnetic Properties Tuning of Armchair BC2N Nanoribbons by Edge Modification, Xiang Xiao, Jing Lu, Tun Tie, Hong Li*, Solid State Communications 257, 27 (2017).
112. Half metallicity in bare BC2N Nanoribbons with zigzag edges, Xiang Xiao, Jing Lu, Tun Tie, Hong Li*, Physics Letters A 381, 1820 (2017).
113. Electronic and Magnetic Properties of Bare Armchair BC2N Nanoribbons, Xiang Xiao, Jun Tie, Jing Lu, Hong Li*, Journal of Magnetism and Magnetic Materials 426, 641 (2017).
2016
114. Rise of Silicene: a Competitive 2D Material, Progress in Materials Science, Jijun Zhao*, Hongsheng Liu, Zhiming Yu, Ruge Quhe, Si Zhou, Yangyang Wang, ChengCheng Liu, Hongxia Zhong, Nannan Han, Jing Lu*, Yugui Yao*, Kehui Wu* , Progress in Materials Science 83，24 (2016) (invited review). ESI Hot Paper, Highly Cited Paper
115. Monolayer Phosphorene Metal Contacts, Yuanyuan Pan, Yangyang Wang, Meng Ye, Ruge Quhe, Hongxia Zhong, Zhigang Song, Xiyou Peng, Dapeng Yu, Jinbo Yang, Junjie Shi, and Jing Lu*, Chemistry of Materials 28, 2100 (2016). ESI Highly Cited Paper
116. Does P-type Ohmic Contact Exist in WSe2-metal Interfaces? Yangyang Wang, RuoXi Yang, Ruge Quhe, Hongxia Zhong, Linxiao Cong, Meng Ye, Zeyuan Ni, Zhigang Song, Jinbo Yang, Junjie Shi, Ju Li, and Jing Lu*, Nanoscale 8, 1179 (2016). Highly Cited Paper
117. Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations, Hongxia Zhong, # Ruge Quhe, # Yangyang Wang Zeyuan Ni, Meng Ye, Zhigang Song, Yuanyuan Pan, Jinbo Yang, Li Yang, Lei Ming, Junjie Shi* and Jing Lu*, Scientific Reports 6, 21786 (2016). Highly Cited Paper
118. Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions, Han Zhang, Meng Ye, Yangyang Wang, Ruge Quhe, Yuanyuan Pan, Ying Guo, Zhigang Song, Jinbo Yang, Wanlin Guo, and Jing Lu*, Phys. Chem. Chem. Phys. 18, 16367 (2016).
119. Interfacial Properties of Monolayer MoSe2-Metal contacts, Yuanyuan Pan, Sibai Li, Meng Ye, Ruge Quhe, Zhigang Song, Yangyang Wang, Jiaxin Zheng, Feng Pan, Jinbo Yang, and Jing Lu*, J. Phys. Chem. C 120，13063（2016）.
120. Does the Dirac Cone of Germanene Exist on Metal Substrates? Yangyang Wang, Jingzhen Li, Junhua Xiong, Yuanyuan Pan, Meng Ye, Ying Guo, Han Zhang, Ruge Quhe*, Jing Lu*, Phys. Chem. Chem. Phys. 18, 19451 (2016).
121. Performance Upper Limit of Sub-10 nm Monolayer MoS2 Transistors, Zeyuan Ni, Meng Ye, Jianhua Ma, Yangyang Wang, Ruge Quhe, Jiaxin Zheng, Lun Dai, Dapeng Yu, Junjie Shi, Jinbo Yang, Satoshi Watanabe, and Jing Lu*, Advanced Electronic Materials 1600191 (2016).
122. Interfacial Properties of Stanene-Metal Contacts, Ying Guo, Feng Pan, Meng Ye, Yangyang Wang, Yuanyuan Pan, Xiuying Zhang, Jingzhen Li, Han Zhang, Jing Lu*, 2D Materials 3, 035020 (2016).
123. Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure, Pu Huang, Jun-jie Shi*, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Xiong Cao, Meng Wu, and Jing Lu, J. Phys. Chem. Lett. 7, 2888 (2016).
124. Effect of edge modification on the zigzag BC2N nanoribbons, Xiang Xiao, Hong Li, Jun Tie, Jing Lu, Chem. Phys. Lett. 658, 234 (2016).
125. Origin of the wide band gap from 0.6 to 2.3 eV in photovoltaic material InN: quantum confinement from surface nanostructure, Pu Huang, Jun-jie Shi*, Ping Wang, Min Zhang, Yi-min Ding, Meng Wu, Jing Lu and Xin-qiang Wang, J. Mater. Chem. A 4, 17412 (2016).
126. Insights into the inner structure of high-nickel agglomerate as high-performance lithium-ions cathods, Cheng-Kai Yang, Li-Ya Qi, Zicheng Zuo, Ru-Na Wang, Meng Ye, Jing Lu, Heng-Hui Zhou*, Journal of Power Sources 331, 487 (2016).
127. Few-Layer Fe-3(PO4)(2).8H(2)O: Novel H-Bonded 2D Material and Its Abnormal Electronic Properties, Sibai Li, Ruge Quhe, Mouyi Weng, Yancong Feng, Yunxing Zuo, Weiji Xiao, Jiaxin Zheng*, Jing Lu, Feng Pan*, J. Phys. Chem. C. 120, 26278 (2016).
2015
128. Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry, Zhigang Song, Ruge Quhe, Shunquan Liu，Yan Li, Ji Feng，YingchangYang, Jing Lu*, Jinbo Yang*, Scientific Reports 5:13906 (2015); DOI: 10.1038/srep13906 (2015).
129. Silicene Spintronics, Yangyang Wang, Ruge Quhe, Dapeng Yu, and Jing Lu*, Chinese Physics B 24, 087201 (2015) (invited review).
130. Silicene Transistors, Ruge Quhe, Yangyang Wang, and Jing Lu*, Chinese Physics B 24, 088105 (2015) (invited review).
131. Silicene on substrates: A theoretical perspective, HongXia Zhong, RuGe Quhe, YangYang Wang, JunJie Shi, Jing Lu*, Chinese Physics B 24, 087308 (2015) (invited review).
132. Graphdiyne-metal contacts and graphdiyne transistors, Yuanyuan Pan, Yangyang Wang, Lu Wang, Hongxia Zhong, Ruge Quhe, Zeyuan Ni, Meng Ye, Wai-Ning Mei, Junjie Shi, Wanlin Guo, Jinbo Yang *, Jing Lu*, Nanoscale 7, 2116 (2015).
133. Silicene nanomesh, Fen Pan, Yangyang Wang, Kaili Jiang, Zeyuan Ni, Jianhua Ma, Jianxin Zheng, Ruge Quhe, Junjie Shi, Jinbo Yang, Changle Chen, Jing Lu*, Scientific Reports 5, 9075 (2015).
134. All-metallic Vertical Transistors Based on Stacked Dirac Materials, Yangyang Wang, Zeyuan Ni, Qihang Liu, Ruge Quhe, Jiaxin Zheng, Meng Ye, Dapeng Yu, Junjie Shi, Jinbo Yang, Ju Li, and Jing Lu*, Advanced Functional Materials, 25, 68 (2015).
135. Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Micro-Wire and Defect, Pu Huang, Hua Zong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Ying-ping He, Jing Lu, and Xiao-dong Hu, Acs Nano 9, 9276 (2015).
136. Modeling of stacked 2D materials and devices, Xiaofeng Qian, Yangyang Wang, Wenbin Li, Jing Lu, and Ju Li, 2D Materials 2, 032003(2015).
137. Electronic Properties of Halogen-Adsorbed Graphene, Chengyong Xu, Paul A. Brown, Jing Lu, Kevin L Shuford, J. Phys. Chem. C. 119, 17271 (2015).
138. Phase formations and magnetic properties of single crystal nickel ferrite IJNiFe2O4 with different morphologies, Aixian Shan, ab Xue Wu, Jing Lu, Chinping Chen* and Rongming Wang, CrystEngComn 17, 1603 (2015).
2014
139. Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap, Zhigang Song, Cheng-Cheng Liu, Jinbo Yang*, Jingzhi Han, Meng Ye, Botao Fu, Yingchang Yang, Qian Niu, Jing Lu* & Yugui Yao *, NPG Asia Materials 6, e147 (2014). Highly Cited Paper
140. Does the Dirac Cone Exist in Silicene on Metal Substrates? Ruge Quhe, Yakun Yuan, Jiaxin Zheng, Yangyang Wang, Zeyuan Ni, Junjie Shi, Dapeng Yu, Jinbo Yang*, Jing Lu*, Scientific Reports 4, 5476 (2014).
141. Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors, Zeyuan Ni, Hongxia Zhong, Xinhe Jiang, Ruge Quhe, Guangfu Luo, Yangyang Wang, Meng Ye, Jinbo Yang,* Junjie Shi,* and Jing Lu*, Nanoscale 6, 7609 (2014).
142. Gate-induced half-metallicity in semihydrogenated silicene, Feng Pan, Ruge Quhe, Qi Ge, Jiaxin Zheng, Zeyuan Ni, Yangyang Wang, Zhengxiang Gao, Lu Wang, and Jing Lu*, Physica E 56, 43(2014).
143. Strong Band Hybridization between Silicene and Ag (111) Substrate, Yakun Yuan, Ruge Quhe, Jiaxin Zheng, Yangyang Wang, Zeyuan Ni, Junjie Shi, and Jing Lu*, Physica E 58, 38 (2014).
144. Tunable band gap in germanene by surface adsorption, Meng Ye, Ruge Quhe, Jiaxin Zheng, Zeyuan Ni, Yangyang Wang, Yakun Yuan, H. Y. Geoffrey Tse, Junjie Shi, Zhengxiang Gao, and Jing Lu*, Physica E 59, 60(2014).
145. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures, by Jiaming Wang, Fujun Xu, Xia Zhang, Wei An, Xin-Zheng Li, Jie Song, Weikun Ge, Guangshan Tian, Jing Lu, Xinqiang Wang, Ning Tang, Zhijian Yang, Wei Li, Weiying Wang, Peng Jin, Yonghai Chen, and Bo Shen, Scientific Reports 4, 6521(2014).
146. Photochemical Behavior of Single-Walled Carbon Nanotubes in the Presence of Propylamine，Yutaka Maeda,* Yuhei Hasuike, Kei Ohkubo, Atsushi Tashiro, Shinya Kaneko, Masayuki Kikuta, Michio Yamada, Tadashi Hasegawa, Takeshi Akasaka，Jing Zhou, Jing Lu, Shigeru Nagase,and Shunichi Fukuzumi，CHEMPHYSCHEM 15, 1821(2014).
147. First-principle calculation and assignment for vibrational spectra of Ba(Mg1/3Nb2/3)O3 microwave dielectric ceramic, Chuan-Ling Diao, Chun-Hai Wang, Neng-Neng Luo, Ze-Ming Qi, Tao Shao, Yu-Yin Wang, Jing Lu, Quan-Chao Wang, Xiao-Jun Kuang, Liang Fang, Feng Shi, and Xi-Ping Jing, J. Appl. Phys. 115, 114103 (2014).
148. Band edge modulation and interband optical transition in AlN: MgAl-ON nanotubes, Huang, Pu; Shi, Jun-Jie; Zhang, Min; Jiang, Xin-he; Zhong, Hong-xia; Ding, Yi-min; Lu, Jing; Wang, Xihua, Materials Research Express 1, 025030 (2014).
149. Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)(m)/(GaN)(n) (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation, X Jiang, J Shi, M Zhang, H Zhong, P Hang, Y Ding, T Yu, B Shen, Jing Lu, X Wang, New J Phys 16, 113065 (2014).
2013
150. Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates, Jiaxin Zheng, Yangyang Wang, Lu Wang, Ruge Quhe, Zeyuan Ni, Wai-Ning Mei, Zhengxiang Gao, Dapeng Yu, Junjie Shi, and Jing Lu*, Scientific Reports 3, 2081 (2013).
151. Tunable band gap in few-layer graphene by surface adsorption, Ruge Quhe, Jianhua Ma, Zesheng Zeng, Kechao Tang, Jiaxin Zheng, Yangyang Wang, Zeyuan Ni, Lu Wang, Zhengxiang Gao, Junjie Shi, and Jing Lu*, Scientific Reports 3, 1794 (2013).
152. Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation, Jiaxin Zheng, Lu Wang, Ruge Quhe, Qihang Liu, Hong Li, Dapeng Yu, Wai-Ning Mei, Junjie Shi, Zhengxiang Gao, and Jing Lu*, Scientific Reports, 3, 1314 (2013).
153. Sign-Changeable Spin-filter Efficiency in Linear Carbon Atomic Chain, Jiaxin Zheng, Chengyong Xu, Lu Wang, Qiye Zheng, Hong Li, Qihang Liu, Ruge Quhe, Zhengxiang Gao, Junjie Shi, and Jing Lu*, Physica E 48, 101 (2013).
154. Enhanced many-body effects in one-dimensional linear atomic chains, Ruixiang Fei, Guangfu Luo, Yangyang Wang, Zhengxiang Gao, Shigeru Nagase, Dapeng Yu, and Jing Lu*, Phys. Status Solidi B 250, 8, 1636 (2013).
155. Structural, Electronic, and Optical Properties of Bulk Graphdiyne, Guangfu Luo, Qiye Zheng, Wai-Ning Mei, Jing Lu*, Shigeru, Nagase*, J. Phys. Chem. C 117, 13072 (2013).
156. Intrinsic Region Length Scaling of Heavily Doped Carbon Nanotube p-i-n Junctions, Zheng Li, Jiaxin Zheng, Zeyuan Ni, Ruge Quhe, Yangyang Wang, Zhengxiang Gao, and Jing Lu*, Nanoscale 6, 6999 (2013).
157. Helicity Selective Photoreaction of Single-walled Carbon Nanotubes with Organosulfur Compounds in the Presence of Oxygen, Yutaka Maeda* Junki Higo, Yuri Amagai, Jun Matsui, Kei Ohkubo, Yusuke Yoshigoe, Masahiro, Hashimoto, Kazuhiro Eguchi, Michio Yamada, Tadashi Hasegawa, Yoshinori Sato, Jing Zhou, Jing Lu, Tokuji Miyashita, Shunichi Fukuzumi, Tatsuya Murakami, Kazuyuki Tohji, Shigeru Nagase, Takeshi, Akasaka*, J. Am. Chem. Soc. 135, 6356 (2013).
158. Adsorption configurations of carbon monoxide on gold monolayer supported by graphene or monolayer hexagonal boron nitride: a first-principles study, Jiaxin Zheng, Lu Wang, Khabibulakh Katsiev, Yaroslav Losovyj, Elio Vescovo, D. Wayne Goodman, Peter A. Dowben, Jing Lu and Wai-Ning Mei, Eur. Phys. J. B 86, 441 (2013).
159. Electronic structures and properties of lanthanide hexaboride nanowires, Lu Wang, Guangfu Luo, Daniel Valencia, Carlos H. Sierra Llavina, R. Sabirianov, Jing Lu, J. Q. Lu, W. N. Mei, C. L. Cheung, J. Appl. Phys. 114, 143709 (2013).
160. First-Principle Calculation and Assignment for Vibrational Spectra of Ba(Mg1/2W1/2)O3 Microwave Dielectric Ceramic, Chuan-Ling Diao, Chun-Hai Wang, Neng-Neng Luo, Ze-Ming Qi, Tao Shao, Yu-Yin Wang, Jing Lu, Feng Shi, and Xi-Ping Jing, J. Am. Ceram. Soc. 96, 2898 (2013).
2012
161. Tunable band gap in silicene and germanene, Zeyuan Ni, Qihang Liu, Kechao Tang, Jiaxin Zheng, Jing Zhou, Rui Qin, Zhengxiang Gao, Dapeng Yu, Jing Lu*, Nano Letters. 12, 113 (2012). ESI Highly Cited Paper
162. Tunable and Sizable Band Gap of Single Layer Graphene Sandwiched between Hexagonal Boron Nitride, Ruge Quhe, Jiaxin Zheng, Guangfu Luo, Qihang Liu, Rui Qin, Jing Zhou, Dapeng Yu, Shigeru Nagase, Wai-Ning Mei, Zhengxiang Gao, and Jing Lu*, NPG Asia Materials 4, e6 (2012).
163. Tunable and sizable band gap in silicene by surface adsorption, Ruge Quhe, Ruixiang Fei, Qihang Liu, Jiaxin Zheng, Hong Li, Chengyong Xu, Zeyuan Ni, Yangyang Wang, Dapeng Yu, Zhengxiang Gao, and Jing Lu*, Scientific Reports 2, 853 (2012).
164. Tunable Charge-transport Property of Ih–C80 Endohedral Metallofullerenes: Investigation of La2@C80, Sc3N@C80, and Sc3C2@C80, Satoru Sato, Shu Seki*, Guangfu Luo, Mitsuaki Suzuki, Jing Lu*, Shigeru Nagase* and Takeshi Akasaka*, J. Am. Chem. Soc. 134, 11681 (2012).
165. Co–crystal of Paramagnetic Endohedral Metallofullerene La@C82 and Nickel Porphyrin with High Electronic Mobility, Satoru Sato*, Hidefumi Nikawa, Shu Seki, Lu Wang, Guangfu Luo, Jing Lu*, Masayuki Haranaka, Takahiro Tsuchiya, Shigeru Nagase* and Takeshi Akasaka*, Angewandte Chemie 7, 1589 (2012).
166. Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation, Qihang Liu, Linze Li, Yafei Li, Zhengxiang Gao, Zhongfang Chen* and Jing Lu*, J. Phys. Chem. C. 116, 21556 (2012).
167. Giant magnetoresistance in silicene nanoribbons, Chengyong Xu, Guangfu Luo, Qihang Liu, Jiaxin Zheng, Zhimeng Zhang, Shigeru Nagase, Zhengxiang Gao, and Jing Lu*, Nanoscale 4,3111 (2012).
168. Structural and Electronic Properties of Bilayer and Trilayer Graphdiyne, Qiye Zheng, Guangfu Luo, Qihang Liu, Ruge Quhe, Jiaxin Zheng, Kechao Tang, Zhengxiang Gao, Shigeru Nagase, and Jing Lu*, Nanoscale 4,3990 (2012).
169. Electromechanical Switch in Metallic Graphene Nanoribbons via Twisting, Hong Li, Nabil Al-Aqtash, Lu Wang, Rui Qin, Qihang Liu, Wai-Ning Mei, R.F. Sabirianov, Zhengxiang Gao, and Jing Lu*, Physica E 44, 2021 (2012).
170. High Performance Silicene Nanoribbon Field Effect Transistors with Current Saturation, Hong Li, Lu Wang, Qihang Liu, Jiaxin Zheng, Wai-Ning Mei, Zhengxiang Gao, Junjie Shi, and Jing Lu*, The European Physical Journal B 85, 274 (2012).
171. Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device, Yangyang Wang, Jiaxin Zheng, Zeyuan Ni, Ruixiang Fei, Qihang Liu, Ruge Quhe, Chengyong Xu, Jing Zhou, Zhengxiang Gao, and Jing Lu*, Nano 7, 1250037 (2012).
172. Electronic and transport properties of a biased multilayer hexagonal boron nitride, Kechao Tang, Zeyuan Ni, Qihang Liu, Ruge Quhe, Qiye Zheng, Jiaxin Zheng, Ruixiang Fei, Zhengxiang Gao, and Jing Lu*, The European Physical Journal B 85, 301 (2012).
173. Electrically Controlled Electron Transfer and Resistance Switching in Graphene Oxide Noncovalently Functionalized with Dye, Benlin Hu, Ruge Quhe, Cao Chen, Fei Zhuge, Xiaojian Zhu, Shanshan Peng, Xinxin Chen, Liang Pan, Yuanzhao Wu, Wenge Zheng, Qing Yan, Jing Lu, and Run-Wei Li*, J. Mater. Chem. 22, 16422 (2012).
174. Electron Transport through Single Endohedral Ce@C82 Metallofullerenes, Manabu Kiguchi*, Satoshi, Kaneko, Lu Wang, Jing Lu, Shigeru Nagase*, Satoru Sato, Michio Yamada, Zdenek Slanina, Takeshi Akasaka*, Phys. Rev. B, 86, 155406 (2012).
175. Interaction of single-walled carbon nanotubes with amine, Yutaka Maeda, Michio Yamada, Tadashi, Hasegawa, Takeshi Akasaka, Jing Lu, Shigeru Nagase, Nano 7, 130001 (2012).
2011
176. Functionalized Graphene for High Performance Two-dimensional Spintronics Devices, Linze Li, Rui Qin, Hong Li, Lili Yu, Qihang Liu, Guangfu Luo, Zhengxiang Gao, and Jing Lu*, ACS NANO 4, 2061 (2011).
177. Semi-metallic Single-component Crystal of Soluble La@C82 Derivative with High Electron Mobility, Satoru Sato, Shu Seki, Yoshihito Honsho, Guangfu Luo, Lu Wang, Jing Lu, Hidefumi Nikawa, Masayuki Haranaka, Takahiro Tsuchiya, Shigeru Nagase and Takeshi Akasaka*, J. Am. Chem. Soc. 133, 2766 (2011).
178. Polarized Nonresonant Raman Spectra of Graphene Nanoribbons, Guangfu Luo, Lu Wang, Hong Li, Rui Qin, Jing Zhou, Linze Li, Zhengxiang Gao, Wai-Ning Mei, Jing Lu*, and Shigeru Nagase*, J. Phys. Chem. C. 115, 24463 (2011).
179. Structure, Electronic, and Transport Properties of Transition Metal Intercalated Graphene and Graphene-Hexagonal-Boron-Nitride Bilayer, Jing Zhou, Lu Wang, Rui Qin, Jiaxin Zheng, Wai Ning Mei, * P. A. Dowben, Shigeru Nagase, Zhengxiang Gao, and Jing Lu*, J. Phys. Chem. C. 114, 15347 (2011).
180. Tuning Graphene Nanoribbon Field Effect Transistors via Controlling Doping Level, Lu Wang, Jiaxin Zheng, Jing Zhou, Rui Qin, Hong Li, Wai-Ning Mei, Shigeru Nagase, and Jing Lu*, Theoretical Chemistry Accounts 130, 483 (2011).
181. Sign-changeable spin-filter efficiency and giant magnetoresistance in seamless graphene nanoribbon junctions，Chengyong Xu, Linze Li, Hong Li, Rui Qin, Jiaxin Zheng, Zhengxiang Gao,and Jing Lu*, Comp. Mater. Sci. 50，2886 (2011).
182. Electric-Field-Induced Energy Gap in Few-Layer Graphene, Kechao Tang, Rui Qin, Jing Zhou, Heruge Qu, Jiaxin Zheng, Ruixiang Fei, Hong Li, Qiye Zheng, Zhengxiang Gao, and Jing Lu*, J. Phys. Chem. C 115, 9458 (2011).
183. Half Metallicity in BC2N Nanoribbons: Stability, Electronic Struc-tures, and Magnetism, Lin Lai and Jing Lu*, Nanoscale 3, 2583 (2011).
184. Negative Differential Resistance in Parallel Single-walled Carbon Nanotube Contacts Qihang Liu, Rui Qin, Jing Zhou, Hong Li, Chengyong Xu, Lin Lai, Guangfu Luo, Jing Lu*, Shimin Hou, Enge Wang, and Zhengxiang Gao, Phys. Rev. B 83, 155442 (2011).
185. All-Metallic High Performance Field Effect Transistor Based on Telescoping Carbon Nanotubes: An ab Initio Study, Qihang Liu, Lili Yu, Hong Li, Rui Qin, Zhou Jing, Jiaxin Zheng, Zhengxiang Gao, and Jing Lu*, J. Phys. Chem. C 115, 6933 (2011).
186. Quasiparticle Energies and Excitonic Effects of Graphdiyne: Theory and Experiment, Guangfu Luo, Xuemin Qian, Huibiao Liu, Rui Qin, Jing Zhou, Linze Li, Zhengxiang Gao, Enge Wang, Wai-Ning Mei, Jing Lu*, Yuliang Li* and Shigeru Nagase*, Phys. Rev. B 84，075439 (2011).
187. Family-Dependent Rectification Characteristics in Ultra-Short Graphene Nanoribbon p-n Junctions, Jiaxin Zheng, Xin Yan, Lili Yu, Hong Li, Rui Qin, Guangfu Luo, Zhengxiang Gao, Dapeng Yu, and Jing Lu*, J. Phys. Chem. C 115, 8547 (2011).
188. Negative rectification and negative differential resistance in nanoscale single-walled carbon nanotube p-n junctions, Lili Yu, Xin Yan, Hong Li, Rui Qin, Guangfu Luo, Chengyong Xu, Jiaxin Zheng, Qihang Liu, Jing Lu*, Zhengxiang Gao, and Xuefeng Wang, Theoretical Chemistry Accounts 130, 353 (2011).
189. Structural, Electronic and Magnetic Properties of Ultra-narrow NbSe2 Nanoribbons, Kai Ji, Lili Yu, Jing Lu*, Hong Li, Guangfu Luo, Jing Zhou, Rui Qin, Qihang Liu, Lin Lai, and Zhengxiang Gao, J. Nanosci Nanotech 11, 2075 (2011).
190. Ultra-narrow WS2 Nanoribbons Encapsulated in Carbon Nanotubes, Zhiyong Wang, Keke Zhao, Hong Li, Zheng Liu, Zujin Shi,* Jing Lu*, Kazu Suenaga,* Soon-Kil Joung, Toshiya Okazaki, Zhaoxia Jin,Zhennan Gu, Zhengxiang Gao, and Sumio Iijima, J Materials Chemistry 21, 171(2011).
191. Preparation and characterization of transparent and conductive thin films of single-walled carbon nanotubes, Yutaka Maeda, Kazuki Komoriya, Katsuya Sode, Junki Higo, Takayuki Nakamura, Michio Yamada, Tadashi Hasegawa, Takeshi Akasaka*, Takeshi Saito, Jing Lu and Shigeru Nagase, Nanoscale 3, 1904 (2011).
192. Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach, H. Zhang, L. Liu, B. Gao, Y. Qiu, X. Liu, J. Lu, R.Q. Han, J. Kang, B. Yu, Appl. Phys. Lett. 98, 042105 (2011).
2010
193. Mixed Low-dimensional Nanomaterial: 2D MoS2 Inorganic Nanoribbons Encapsulated in Quasi-1D Carbon Nanotubes, Zhiyong Wang, Hong Li, Zheng Liu, Zujin Shi*, Jing Lu*, Kazu Suenaga*, Soon-Kil Joung, Toshiya Okazaki, Zhennan Gu, Jing Zhou, Zhengxiang Gao, Guangping Li, Stefano Sanvito, Enge Wang, and Sumio Iijima, J. Am. Chem. Soc.132, 13840 (2010).
194. Functionalized Metallic Single-Walled Carbon Nanotubes as High Performance Single-Molecule Organic Field Effect Transistor: an ab Initio study, Hong Li, Xin Yan, Guangfu Luo, Rui Qin, Qihang Liu, Lili Yu, Chengyong Xu, Jiaxin Zheng, Jing Zhou, Jing Lu*, Zhengxiang Gao, Shigeru Nagase, and Wai Ning Mei, J. Phys. Chem. C 114, 15816 (2010) Highlighted by Nature Asia Materials
195. Half-Metallic Sandwich Organometallic Molecular Wires with Negative Differential Resistance and Sign-Changeable High Spin-filter Efficiency, Lu Wang, Xingfa Gao, Xin Yan, Jing Lu*, Zhengxiang Gao, Shigeru Nagase* and Stefano Sanvito, J. Phys. Chem. C 114, 21893 (2010).
196. Structural, Electronic and Transport Properties of Gd/Eu Atomic Chains Encapsulated in Single-walled Carbon Nanotubes, Jing Zhou, Xin Yan, Guangfu Luo, Rui Qin, Hong Li, Jing Lu*, Wai Ning Mei, * and Zhengxiang Gao, J. Phys. Chem. C 114, 15347(2010).
197. Room-temperature giant magnetoresistance over one billion percent in bare graphene nanoribbon device Rui Qin, Jing Lu*, Lin Lai, Jing Zhou, Hong Li, Qihang Liu, Guangfu Luo, Lina Zhao, Zhengxiang Gao, Wai Ning Mei, and Guangping Li, Phys. Rev. B 81, 233403 (2010).
198. Electron localization and emission mechanism in wurtzite (Al, In, Ga)N alloys, Qihang Liu, Jing Lu*, Zhengxiang Gao, Lin Lai, Rui Rin, Hong Li, Jing Zhou, Guangping Li, Physica Status Solidi B 247, 109 (2010).
199. Polarized Vibrational Infrared Absorption of Graphene Nanoribbons, Guangfu Luo, Jing Lu*, Wai-Ning Mei, Lu Wang, Lin Lai, Jing Zhou, Rui Qin, Hong Li, and Zhengxiang Gao, J. Phys. Chem. C 114, 6959 (2010).
200. Electronic structure and stability of Ultranarrow Single-layer SnS2 Nanoribbons: a First-Principles Study, Linze Li, Hong Li, Jing Zhou, Jing Lu*, Rui Qin, Zhengxiang Gao, and Wai Ning Mei, J. Compu. Theore. Nanoscience 7, 2100(2010).
201. Selection of Single-Walled Carbon Nanotubes According to both Their Diameter and Chirality via Nanotweezers, Jing Zhou, Hong Li, Jing Lu*, Guangfu Luo, Lin Lai, Rui Qin, Lu Wang, Shigeru Nagase, Zhengxiang Gao* Wai Ning Mei, Guangping Li, Dapeng Yu, and Stefano Sanvito, Nano Research 3, 296 (2010).
202. Separation of metallic single-walled carbon nanotubes using various amines, Y. Maeda, K. Komoriya, K. Sode, M. Kanda, M. Yamada, T. Hasegawa, T. Akasaka, J. Lu, S. Nagase, Physica Status Solidi B 247,2641 (2010).
203. Insights into the local electronic structure of semiconducting boron carbides in the vicinity of transition metal dopants, Guangfu Luo, Jing Lu, Jing Liu, Wai-Ning Mei, Peter A, Dowben, Materials Science and Engineering B 175, 1 (2010).
204. Ionic doping effect in ZrO2 resistive switching memory, H. W. Zhang, B. Gao, S. Yu, L. Zeng, L. F. Liu, X.Y. Liu, Y. Wang, J. Lu, R.Q. Han, J.F. Kang*, Appl. Phys. Lett 96, 123502 (2010).
205. Two-Step Alkylation of Single-Walled Carbon Nanotubes: Substituent Effect on Sidewall Functionalization, Yutaka Maeda, Takaaki Kato, Tadashi Hasegawa, Masahiro Kako, Takeshi Akasaka, Jing Lu, and Shigeru Nagase, Organic Lett 12, 996 (2010).
206. First-principles study of the formation mechanisms of nitrogen molecule in annealed ZnO，Jingyun Gao, Rui Qin, Guangfu Luo, Jing Lu, Y Leprince-Wang, Hengqiang Ye, Zhimin Liao, Qing Zhao*, Dapeng Yu*. Phys. Lett. A. 374, 3546, (2010)
2009
207. Electronic type- and diameter-dependent reduction of single-walled carbon nanotubes induced by adsorption of electron donor molecules, Jing Zhou, Yutaka Maeda, Jing Lu*, Atsushi Tashiro, Tadashi Hasegawa, Guangfu Luo, Lu Wang, Lin Lai, Takeshi Akasaka*, Shigeru Nagase,* Zhengxiang Gao,* Rui Qin, Wai Ning Mei, Guangping Li, Dapeng Yu, Small 5, 244 (2009).
208. A facile, low-cost and scalable method of selective etching semiconducting single-walled carbon nanotubes by a gas reaction, Y. Liu*, H. Zhang, L. Cao, D. Wei, Dr. Y. Wang, H. Kajiura*, Dr. Y. Li, K. Noda, G. Luo, L. Wang, J. Zhou, J. Lu*, Z. Gao, Advanced Materials 21, 813 (2009).
209. Magnetism in carbon nanoscrolls: quasi-half-metal and half-metal in pristine hydrocarbon, Lin Lai, Jing Lu*, Lu Wang, Guangfu Luo, Jing Zhou, Rui Qin, Yu Chen, Hong Li, Zhengxiang Gao,Guangping Li, Wai Ning Mei, Yutaka Maeda, Takeshi Akasaka, and Stefano Sanvito, Nano Research, 2, 844(2009).
210. Origin of p-Type Doping in Zinc Oxide Nanowires Induced by Phosphorus Doping: A First Principles Study, Rui Qin, JX Zheng, J. Lu*, Lu. Wang, L. Lai, GF. Luo, J. Zhou, H.Li, ZX. Gao*, GP. Li, WN, Mei, J. Phys. Chem. C 113, 9541 (2009).
211. Optical Absorption Spectra of Charge-Doped Single-Walled Carbon Nanotubes from First-Principles Calculations, GF. Luo, J. Lu*, WN, Mei, L. Lai, J. Zhou, Rui Qin, H. Li, ZX. Gao, J. Phys. Chem.C 113, 7058 (2009).
212. Adsorption of Nucleic Acid Bases and Amino Acids on Single-Walled Carbon and Boron Nitride Nanotubes: A First-Principles Study， Jiaxin Zheng, Lu Wang, Jing Lu*, Wei Song, Guangfu Luo, Jing Zhou, Rui Qin, Hong Li, Zhengxiang Gao, Lin Lai, Guangping Li, Wai Ning Mei, Journal of Nanoscience and Nanotechnology, 9, 6376 (2009).
213. Study on the Dispersion of Charged Single-Wall Carbon Nanotube Bundles by First Principles Calculation, Wenshuo Liu, Lu Wang, Lin Lai, Guangfu Luo, Jing Lu*, Zhengxiang Gao, Journal of Nanoscience and Nanotechnology, 9, 5170 (2009).
214. Magnetic properties of fully- and half-bare boron nitride nanoribbons, Lin Lai, Jing Lu*, Lu Wang, Guangfu Luo, Jing Zhou, Rui Qin, Zhengxiang Gao*, Wai Ning Mei, J. Phys. Chem. C 113， 2273 (2009).
215. Stability, Electronic Structure, and Optical Property of Surface Passivated Silicon Nanowires: Density Functional Calculation, Chen, RY, Wang, L, Lai, L, J. Lu* Luo, GF, Zhou, J , Gao, ZX, J. Nanosci. Nanotech., 9, 1754 (2009).
216. Tuning of Electronic Properties of Single-Walled Carbon Nanotubes under Homogenous Conditions, Y. Maeda, A. Sagara, M. Hashimoto, Y. Hirashima, K. Sode, T. Hasegawa, M. Kanda, MO. Ishitsuka, T. Tsuchiya, T. Akasaka, T. Okazaki, H. Kataura, J. Lu, S.Nagase, S. Takeuchi, ChemPhysChem. 10, 926 (2009).
217. XRD and Raman Studies on the Ordering/Disordering of Ba(Mg1/3Ta2/3)O-3, CH, Wang, XP Jing, Lu Wang, Jing Lu, J. Amer. Ceramic Soc. 92, 1547 (2009).
218. Effects of Ionic Doping on the Behaviors of Oxygen Vacancies in HfO2 and ZrO2: A First Principles Study. Haowei Zhang, Bin Gao, Shimeng Yu, Lin Lai, Lang Zeng, Bing Sun, Lifeng Liu, Xiaoyan Liu, Jing Lu, Ruqi Han, Jinfeng Kang*, 2009 International Conference on Simulation of Semiconductor Processes and Devices, 1-4 (2009).
219. Magnetic properties of undoped Cu2O fine powders with magnetic impurities and/or cation vacancies, Chinping Chen*, Lin He, Lin Lai, Hua Zhang, Jing Lu, Lin Guo*, Yadong Li, Journal of Physics: Condensed Matter 21 (14), 145601, (2009).
220. Electronic and mechanical coupling in bent ZnO nanowires, Xiaobing Han, Liangzhi Kou, Xiaoli Lang, Jianbai Xia, Ning Wang, Rui Qin, Jing Lu, Jun Xu, Zhimin Liao, Xinzheng Zhang, Xudong Shan, Xuefeng Song, Jingyun Gao, Wanlin Guo*, and Dapeng Yu*, Advanced Materials, 21, 4937 (2009).
2008
221. Novel One-Dimensional Organometallic Half Metals: Vanadium-Cyclopentadienyl, Vanadium-Cyclopentadienyl-Benzene, and Vanadium-Anthracene Wires: Lu Wang, Zixing Cai, Junyu Wang, Jing Lu*, Guangfu Luo, Lin Lai, Jing Zhou, Rui Qin, Zhengxiang Gao*, Dapeng Yu, Guangping Li, Wai Ning Mei, and Stefano Sanvito, Nano Lett. 8, 3640 (2008).
222. First-principles calculation of 13C NMR chemical shifts of infinite single-walled carbon nanotubes：New data for large-diameter and four helical nanotubes, Lin Lai, Jing Lu*, Wei Song, Ming Ni, Lu Wang, Guangfu Luo, Jing Zhou, Wai Ning Mei, Zhengxiang Gao*, Dapeng Yu, J. Phys. Chem. C 112, 16417 (2008).
223. Tuning of Hole Doping Level of Iodine-Encapsulated Single-Walled Carbon Nanotubes by Temperature Adjusting, Zhiyong Wang, Lu Wang, Zujin Shi,* Jing Lu* and Zhennan Gu， Zhengxiang Gao, Chem. Comm. 29, 3429 (2008)
224. Selective adsorption of cations on single-walled carbon nanotubes：a density functional theory study, Dan Wang, Jing Lu*, Lin Lai, Lu Wang, Guangfu Luo, Jing Zhou, Guangping Li, Wai Ning Mei, Shigeru Nagase, Yutaka Maeda, Takeshi Akasaka, Zhengxiang Gao, *Yunsong Zhou, Comp. Mater. Sci. 43, 886 (2008).
225. Preparation of transparent and conductive thin films of metallic single-walled carbon nanotubes, Y. Maeda, A. Hashimoto, S. Kaneko, M. Kanda, T. Hasegawa, T. Tsuchiya, T. Akasak, Y. Naitoh, T. Shimizu, H. Tokumoto, Jing Lu, S. Nagase, J. Mater. Chem. 18, 4180 (2008).
226. Simple purification and selective enrichment of metallic SWCNTs produced using the arc-discharge method, Y. Maeda, Y. Takano, A. Sagara, M. Hashimoto, M. Kanda, S. Kimura, Y. Lian, T. Nakahodo, T. Tsuchiya, T. Wakahara, T. Akasaka, T. Hasegawa, S. Kazaoui, M. Minami, Jing Lu, S. Nagase, Carbon, 46, 1563 (2008).
227. Photoluminescence and energy transfer of phosphor series Ba2-zSrzCaMo1-yWyO6: Eu, Li for white light UVLED applications, S. Ye, C. H. Wang, Z. S. Liu, J. Lu, X. P. Jing, Appl. Phys. B 91, 551 (2008).
228. Far infrared reflection spectrum and IR-active modes of MgTiO3, C.H. Wang, X.J. Kuang, X.P. Jing, Jing Lu, X. Lu, J. Shao, J. Appl. Phys. 103, 074105(2008).
229. Assignment of Raman-active vibrational modes of MgTiO3, C.H. Wang, X.P. Jing, W. Feng, Jing Lu, J. Appl. Phys. 104, 034112 (2008).
230. Electronic and magnetic properties of endohedrally doped fullerene Mn@C60: a total energy study，Guangping Li , R. F. Sabirianov, Jing Lu, X. C. Zeng and W. N. Mei, J. Chem. Phys. 128, 074304(2008).
231. C(60)(OH)(n)- Assisted dispersion of single-walled carbon nanotubes ,Maeda, Yutaka, Kato, Takaaki, Higo, Junki, Hasegawa, Tadashi, Kitano, Takahiro, Tsuchiya, Takahiro, Akasaka, Takeshi, Okazaki, Toshiya, Lu, Jing, Nagase, Shigeru, Nano, 3(6), pp 455-459, (2008).
2007
232. Static and Optical Transverse and Longitudinal Screened Polarizabilities of Boron Nitride Nanotubes, Lu Wang, Jing Lu*, Lin Lai, Zhengxiang Gao* and Wai Ning Mei, J. Phys. Chem. C 111，3285 (2007).
233. Why are Semiconducing Single-wall Carbon Nanotubes Abnormally Separated from Their Metallic Counterparts, Jing Lu*, Lin Lai, Guangfu Luo, Jing Zhou, Rui Qin, Lu Wang, Mingwei Jing, Wai Ning Mei, Guangping Li, Shigeru Nagase, Yutaka Maeda, Takeshi Akasaka, Zhengxiang Gao, Dapeng Yu, Small 3, 1566 (2007).
234. Structural and electronic properties of nanoscrolls rolled up by single graphene sheet, Yu Chen, Jing Lu*, Zhengxiang Gao, J. Phys. Chem. C 111, 1625 (2007).
235. Optical Absorption Spectra and Polarizabilities of Silicon Carbide Nanotubes: A First Principles Study, Lu Wang, Jing Lu*, Guangfu Luo, Wei Song, Lin Lai, Mingwei Jing, Rui Qin, Jing Zhou, Zhengxiang Gao* and Wai Ning Mei, J. Phys. Chem. C 111, 18864 (2007).
236. First-principles study of the hydrogen-passivated single-crystalline silicon nanotubes: electronic and optical properties, Ming Ni, Guangfu Luo, Jing Lu*, Lin Lai, Lu Wang, Mingwei Jing, Wei Song, Zhengxiang Gao*, Guangping Li, Wai Ning Mei, Dapeng Yu, Nanotechnologe 18, 505707 (2007)
237. Effects of hole doping on selectivity of naphthalene towards single-wall carbon nanotubes, Dan Wang, Jing Lu*, Ming Ni, Lin Lai, W. N. Mei, S. Nagase, Y. Maeda, T. Akasaka, Zhengxiang Gao, Yunsong Zhou, Comp. Mater. Sci. 40, 354 (2007).
238. Structural and Electronic Properties of One Dimensional KxC60 Crystal Encapsulated in Carbon Nanotube, W Song, Jing Lu*, ZX Gao, M Ni, LH Guan, ZJ Shi, ZN Gu, S Nagase, DP Yu, HQYe, XW Zhang, International Journal of Modern Physics B 21, 1705 (2007).
239. Extraction of metallic nanotubes of Zeolite-supported single-walled carbon nanotubes synthesized from alcohol, Y. Maeda, S. Hashimoto, T. Hasegawa, M. Kanda, T. Tsuchiya, T. Wakahara, T. Akasaka, Y. Miyauchi, S. Maruyama, Jing Lu, S. Nagase, Nano 2, 221 (2007).
240. Correlation effects and electronic structure of Gd@C60, R. F. Sabirianov, W. N. Mei, Jing Lu, Y. Gao, R.D. Bolskar, P. Jeppson, Ning Wu, A.N. Caruso, P.A. Dowben, J. Phys. Condens. Matter 19, 082201 (Fast Track Communication) (2007).
2006
241. Selective interaction of large or charge-transfer aromatic molecules with metallic single-wall carbon nanotubes: critical role of the molecular size and orientation, Jing Lu*, Shigeru Nagase*, Xinwei Zhang, Dan Wang, Ming Ni, Yutaka Maeda, Takatsugu Wakahara, Tsukasa Nakahodo, Takahiro Tsuchiya, Takeshi Akasaka*, Zhengxiang Gao, Dapeng Yu, Hengqiang Ye, W. N. Mei, Yunsong Zhou, J. Am. Chem. Soc., 128, 5114 (2006).
242. Dispersion and Separation of Small Single-Walled Carbon Nanotubes, Yutaka Maeda, Makoto Kanda, Masahiro Hashimoto, Tadashi Hasegawa, Shin-ichi Kimura, Yongfu Lian, Takatsugu Wakahara, Takeshi Akasaka, Said Kazaoui, Nobutsugu Minami, Toshiya Okazaki, Yuhei Hayamizu, Kenji Hata, Jing Lu, Shigeru Nagase, J. Am. Chem. Soc. 128, 12239 (2006).
243. Structural and magnetic properties of Gd3N@C80, Jing Lu*, R. E. Sabirianov, W. N. Mei, Y. Gao, C. G. Duan, X. C. Zeng, J. Phys. Chem. B (Letter) 110, 23637 (2006).
244. Structural and electronic properties of fluorinated boron nitride nanotubes, Lin Lai, Wei Song, Jing Lu*, Zhengxiang Gao, Shigeru Nagase, Ming Ni, W. N. Mei, Jianjun Liu, Dapeng Yu, Hengqiang Ye, J. Phys.Chem. B. 110, 14092 (2006).
245. Anisotropic and Passivation Dependent Quantum Confinement Effects in Germanium Nanowires: A Comparison with Silicon Nanowires, Mingwei Jing, Ming Ni, Wei Song, Jing Lu*, Zhengxiang Gao, Lin Lai, Wai Ning Mei, Dapeng Yu, Hengqiang Ye, Lu Wang, J. Phys. Chem. B 110, 18332 (2006).
246. Structural and electronic properties of Gd@C60: All-electron relativistic total-energy study, Jing Lu*, W.N. Mei a,Yi Gao, Xiaocheng Zeng,Mingwei Jing,Guangping Li, Renat Sabirianov, Zhengxiang Gao, Liping You , Jun Xu ,Dapeng Yu , Hengqiang Ye, Chem. Phys. Lett. 425, 82 (2006)
247. Evolution of the electronic properties of metallic single-wall carbon nanotubes with the degree of CCl2 covalent functionalization, Jing Lu*, Dan Wang, Shigeru Nagase, Ming Ni, Xinwei Zhang, Yutaka Maeda, Takatsugu Wakahara, Tsukasa Nakahodo, Takahiro Tsuchiya, Takeshi Akasaka, Zhengxiang Gao, Dapeng Yu, Hengqiang Ye, Yunsong Zhou, W. N. Mei, J. Phys. Chem. B, 110,5655 (2006).
248. Preparation of Single-Walled Carbon Nanotube-Organosilicon Hybrids and Their Enhanced Field Emission Properties, Yutaka Maeda, Yoshinori Sato, Masahiro Kako, Takatsugu Wakahara, Takeshi Akasaka, Jing Lu, Shigeru Nagase, Yumiko Kobori, Tadashi Hasegawa, Kenichi Motomiya, Kazuyuki Tohji, Atsuo Kasuya, Dan Wang, Dapeng Yu, Zhengxiang Gao, Rushan Han, and Hengqiang Ye, Chem. Material, 18, 4205 (2006).
2005
249. Interplay of single-wall carbon nanotubes and encapsulated La@C82, La2@C80, and Sc3N@C80, Jing Lu*, Shigeru Nagase*, Dapeng Yu, Hengqiang Ye, Rushan Han, Zhengxiang Gao, Shuang Zhang, and Lianmao Peng, Physical Review B 71, 235417 (2005).
250. Adsorption configuration of NH3 on single-wall carbon nanotubes, Jing Lu*, Shigeru Nagase*, Dapeng Yu, Hengqiang Ye, Rushan Han, Zhengxiang Gao, Chem. Phys. Lett. 405, 90 (2005).
251. Structural evolution of [2+1] cycloaddition derivatives of single- wall carbon nanotubes: from open structure to closed three-membered ring structure with increasing tube diameter, Jing Lu*, Shigeru Nagase*, Xinwei Zhang, Yutaka Maeda, Takatsugu Wakahara, Tsukasa Nakahodo, Takahiro Tsuchiya, Takeshi Akasaka, Dapeng Yu, Zhengxiang Gao, Rushan Han, Hengqiang Ye, J. Mol. Struc. (Theochem), 725, 255 (2005).
252. Encapsulations of La@C82 and La2@C80 inside single-walled boron nitride nanotubes Wei Song, Ming Ni, Jing Lu*, Zhengxiang Gao*, Shigeru Nagase, Dapeng Yu, Hengqiang Ye, Xinwei Zhang, J. Mol. Struc. (Theochem), 730, 119 (2005).
253. Electronic Structures of Semiconducting Double-Walled Carbon Nanotubes: important effect of interlay interaction, Wei Song, Ming Ni, Jing Lu*, Zhengxiang Gao*, Shigeru Nagase, Dapeng Yu, Hengqiang Ye, Xinwei Zhang, Chem. Phys. Lett.414, 429 (2005).
254. Large-Scale Separation of Metallic and Semiconducting Single-Walled Carbon Nanotubes, Yutaka Maeda, Shin-ichi Kimura, Makoto Kanda, Yuya Hirashima, Tadashi Hasegawa, Takatsugu Wakahara, Yongfu Lian, Tsukasa Nakahodo, Takahiro Tsuchiya, Takeshi Akasaka, Jing Lu, Xinwei Zhang, Zhengxiang Gao, Dapeng Yu,Shigeru Nagase, Said Kazaoui, Nobutsugu Minami, Tetsuo Shimizu, Hiroshi Tokumoto, Riichiro Saito, Journal of the American Chemical Society 127, 10287 (2005).
255. Physical origin of the ferromagnetic ordering above room temperature in GaMnN nanowires, Y. P. Song, P. W. Wang, H. Q. Lin, G. S. Tian, J. Lu, Z. Wang, Y. Zhang, D. P. Yu*, J. Phys.: Condens. Matter 17 (33), 5073-5085, (2005).
2004
256. Amphoteric and controllable doping of carbon nanotubes by encapsulation of organic and organometallic molecules, Jing Lu*, Shigeru Nagase*, Dapeng Yu, Hengqiang Ye, Rushan Han, Zhengxiang Gao, Shuang Zhang, Lianmao Peng, Physical Review Letters 93, 116804 (2004).
257. A new approach to simulate the depolymerization process of a two- dimensional hexagonal C60 polymer, Jing Lu*, Shigeru Nagase*, Shuang Zhang, Lianmao Peng, Chem. Phys. Lett. 398, 484 (2004).
258. Counterion-driven spontaneous polymerization of the linear C60n- chains in the fcc fullerides and its magic number behavior, Jing Lu*, Shigeru Nagase*, Shuang Zhang, and Lianmao Peng, Chem. Phys. Lett. 395, 199 (2004).
259. Energetic, geometric and electronic evolutions of single-wall nanotube cabon ropes with K intercalation concentration, Jing Lu*, Shigeru Nagase*, Shuang Zhang, and Lianmao Peng, Phyical Review B 69, 205304 (2004).
2003
260. Structural and electronic properties of metal-encapsulated silicon clusters in a large size range, Jing Lu* and Nagase*, Physical Review Letters 90, 115506 (2003).
261. Strongly size-dependent electronic properties in C60-encapsulated zigzag nanotubes and lower size limit of carbon nano peapods, Jing Lu*, Shigeru Nagase*, Shuang Zhang, and Lianmao Peng, Phyical Review B 68， Rapid Communication, 121402 (2003).
262. Theoretical identification of carbon clusters C20: prevalence of the monocyclic isomer and existences of the smallest fullerene and bowl isomer, Jing Lu*, Suyong Re, Yoongkee Choe, Shigeru Nagase*, Yunsong Zhou, Rushan Han, Lianmao Peng, Xinwei Zhang, and Xiangeng Zhao, Physical Review B 67, 125415 (2003).
263. Metal-doped germanium clusters MGens at the sizes of n=12 and 10: divergence of growth patterns from the MSin clusters, Jing Lu*, Shigeru Nagase*, 372 (3), 394-398 (2003).
2002
264. Density functional theory studies of beryllium-doped endohedral fullerene Be@C60: on center displacement of beryllium inside the C60 cage，Jing Lu*, Yunsong Zhou, Xinwei Zhang, Xiangeng Zhao， Chem. Phys. Lett. 352, 8 (2002).
2001
265. Structural and electronic properties of endohedral and exohedral complexes of silicon with C60，Jing Lu, Yunsong Zhou, Shuang Zhang, Xinwei Zhang, Xiangeng Zhao, Chem. Phys. Lett. 343, 39 (2001).
266. Structural and electronic properties of heterofullerene C59P，Jing Lu，Yunsong Zhou,Yin Luo, Yuanhe Huang, Xinwei Zhang, Xiangeng Zhao, Molecular Physics 99, 1203 (2001).
267. Structural and electronic properties of endohedral phosphorus fullerene P@C60: an off-center displacement of P inside the cage，Jing Lu, Yunsong Zhou, Xinwei Zhang, Xiangeng Zhao, Molecular Physics 99, 1199 (2001).
268. Structural and electronic properties of oxygen-doped heterofullerene: Is the O-C single bond shorter than the C-C single bond?, Jing Lu, Yin Luo, Yuanhe Huang, Xinwei Zhang, Xiangeng Zhao, Solid State Communication 118, 247 (2001).
269. Semiempirical calculations on heterofullerene C59Si: Structural and electronic localization, Jing Lu, Yin Luo, Yuanhe Huang, Xinwei Zhang, Xiangeng Zhao, Solid State Communication 118, 309 (2001).
2000
270. Strong metal-cage hybridization in endohedral La@C82, Y@C82, and Sc@C82, Jing Lu, Xinwei Zhang, Xiangeng Zhao, S. Nagase and K. Kobayashi, Chem. Phys. Lett. 332, 219 (2000).
271. Metal-cage hybridization in endohedral La@C60, Y@C60, and Sc@C60, Jing Lu, Xinwei Zhang and Xiangeng Zhao, Chem. Phys. Lett. 332, 51 (2000).
272. Relativistic electronic structure calculations on endohedral Gd@C60, La@C60, Gd@C74 and La@C74, Jing Lu, Xinwei Zhang, Xiangeng Zhao, Applied Physics A 70, 461 (2000).
273. Electronic properties of heterofullerenes C59X (X=Si, O, and Be), Jing Lu, Xinwei Zhang, Xiangeng Zhao, Mod. Phys. Lett. B 14, 23 (2000).
1999
274. Electronic structures of endohedral N@C60, O@C60 and F@C60, Jing Lu, Xinwei Zhang, Xiangeng Zhao, Chem. Phys. Lett. 312, 85 (1999).
275. Electronic structures of endohedral Ca@C60, Sc@C60 and Y@C60, Jing Lu, Xinwei Zhang, Xiangeng Zhao, Solid State Communication 110, 565 (1999).
276. Electronic structures of endohedral Sr@C60, Ba@C60, Fe@C60 and Y@C60, Jing Lu, Xinwei Zhang, Xiangeng Zhao, Mod. Phys. Lett. B 13, 97 (1999).
1998
277. Valence-band electronic structure of the simple-cubic C60, Jing Lu, Xinwei Zhang, Xiangeng Zhao and Liyuan Zhang, Solid State Communication 108, 89 (1998).
278. Effects of the tangentially directed C-σ orbital on the conduction-band electronic structure of the simple-cubic Na2CsC60, Jing Lu, Xinwei Zhang, Xiangeng Zhao, and Liyuan Zhang, Int. J. Mod. Phys. B 12, 1985(1998).
279. Effects of molecular orientational disorder on the electronic structure of K3C60: with the inclusion of the tangentially directed C-σ orbital, Jing Lu, Xinwei Zhang, Xiangeng Zhao, and Liyuan Zhang, Int. J. Mod. Phys. B 12, 3521(1998).
280. Lattice constant dependence of the electronic structure of simple-cubic Na2MC60 (M =Cs, Rb), Jing Lu, and Liyuan Zhang, Solid State Communication 105, 99(1998).
1997
281. Determination of the mixing potential V between the bipolaron and the itinerant electron and possible two component interaction superconductivity based on a low N(EF) for doped fullerenes, Jing Lu, Xiaobing Feng, and Liyuan Zhang, Physica C 279, 209 (1997).
282. Application of the recursion method to the electronic structure of Na2CsC60 and K6C60, Jing Lu, and Liyuan Zhang, Mod. Phys. Lett. B 11, 659 (1997).
283. Electronic structure of Hg0.8Pb0.2Ba2Ca2Cu3O 8+δ: The role of Pb doping, oxygen doping and high pressure, Jing Lu, Li-yuan Zhang, Xue-jun Hao, Acta Phys.Sin. (overseas Edition) 6, 40-51 (1997).
1996
284. Effects of orientational disorder on the electronic structure of K3C60, Jing Lu, Liyuan Zhang, and Ziliang Cao, Mod. Phys. Lett. B 10, 1417 (1996).
285. Numerical application of the recursion method to the electronic structure of C60, Jing Lu, and Liyuan Zhang, Mod. Phys. Lett. B 10, 1133 (1996).
286. Two-component superconductivity for doped fullerenes, Jing Lu and Liyuan Zhang, Mod. Phys. Lett. B 10, 823(1996).
287. Effects of Pairing Correlations on the Korringa Relation in Doped Fullerenes, Jing Lu, Li-yuan Zhang, Xiao-bing Feng, Chin. Phys. Lett. 13 (11), 859-862 (1996).