Passivated p-type silicon: Hole injection tunable anode material for organic light emission,.APPLIED PHYSICS LETTERS 92, 073303 Published: FEB 18 2008,null APPLIED PHYSICS LETTERS 92, 073303 Published: FEB 18 2008,

Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode.CHEMICAL PHYSICS LETTERS 400, 401-405 DEC 21 2004,null CHEMICAL PHYSICS LETTERS 400, 401-405 DEC 21 2004,

Room-temperature 1.54 um electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering.JOURNAL OF APPLIED PHYSICS 90, 5835 DEC 1 2001,null JOURNAL OF APPLIED PHYSICS 90, 5835 DEC 1 2001,