代表性论文目录（20篇）：
1. J.M.Wang, N.Xie, F.J.Xu*, L.S.Zhang, J.Lang, X.N.Kang, Z.X.Qin, X.L.Yang, N.Tang, X.Q.Wang, W.K.Ge, and B.Shen*, Group-III nitride heteroepitaxial films approaching bulk-class quality, Nature Materials, 22, 853 (2023)
2. J.M.Wang, C.Ji, J.Lang, F.J.Xu*, L.Zhang, X.N.Kang, Z.X.Qin, X.L.Yang, N.Tang, X.Q.Wang, W.K.Ge, and Shen,B*. Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters. Nature Communications, 15, 9398 (2024)
3. H.Yang, X.R.Han, X.L.Yang*, Y.M.Song, B.L.Chen, Z.H.Chen, G.X.Ju, F.J.Xu, N.Tang, T.J.Yu, X.Q.Wang, W.K.Ge, B.Huang*, and B.Shen*, Atomistic Understanding of Dislocation Climb in Nitride Semiconductors: Role of Asymmetric Jogs, Physical Review Letters, 134 (5), 056102 (2025)
4. L.Fu, Y.Q.Hu, N.Ning*, J.X.Duan*, X.H.Jia, H.Y.Yang, Z.X.Li, XY.Han, G.P.Li, J.M.Lu, L.Dai, W.K.Ge, Y.G.Yao, and B.Shen*, Indirect Band Nature of Atomically Thin Hexagonal Boron Nitride Identified by Resonant Excitation in the Deep Ultraviolet Regime, Physical Review Letters, 135, 046903 (2025)
5. S.Wu, X.L.Yang*, H.S.Zhang, L.Shi, Q.Zhang, Q.Y.Shang, Z.M.Qi, Y.Xu, J.Zhang, N.Tang, X.Q.Wang, W.K.Ge, K.Xu and B.Shen*, Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN, Physical Review Letters, 121(14), 145505 (2018)
6. X.W.He, B.Shen*, Y.H.Chen*, Q.Zhang, K.Han, C.M.Yin, N.Tang, F.J.Xu, C.G.Tang, Z.J.Yang, Z.X.Qin, G.Y.Zhang and Z.G.Wang, Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in AlGaN/GaN heterostructures at room temperature, Physical Review Letters, 101(14), 147402 (2008)
7. Z.Y.Zhang, J.M.Wang*, F.J.Xu*, L.S.Zhang, J.Lang, C.Z.Ji, J.C.Zhang, X.N.Kang, Z.X.Qin, G.X.Ju, X.L.Yang, N.Tang, X.Q.Wang, W.K.Ge, and B.Shen*, Stacking III-Nitride Ultraviolet-B Light Emitters with High Efficiency via a Lattice-Engineered Architecture, Advanced Materials, 37, 2508380 (2025)
8. X.Rong, X.Q.Wang*, S.V.Ivanov, X.H.Jiang, G.Chen, P.Wang, W.Y.Wang, C.G.He, T.Wang, T.Schulz, M.Albrecht, P.Jin, F.J.Xu, X.L.Yang, Z.X.Qin, W.K.Ge, J.J.Shi and B.Shen*, High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure, Advanced Materials, 28(36), 7978 (2016)
9. X.C.Liu, N.Tang*, S.X.Zhang, X.Y.Zhang, H.M.Guan, Y.F.Zhang, X.Qian, Y.Ji, W.K.Ge and B.Shen*, Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature, Advanced Science, 7(13), 1903400 (2020)
10. T.Wang, X.Q.Wang*, Z.Y.Chen, X.X.Sun, P.Wang, X.T.Zheng, X.Rong, L.Y.Yang, W.W.Guo, D.Wang, X.L.Yang, F.J.Xu, W.K.Ge, X.X.Zhang* and B.Shen*, High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy, Advanced Science, 5(9), 1800844 (2018)
11. J.M.Wang, M.X.Wang, F.J.Xu*, B.Y.Liu, J.Lang, N.Zhang, X.N. Kang, Z.X.Qin, X.L.Yang, X.Q.Wang, W.K.Ge and B.Shen*, Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping, Light-Science & Applications, 11(1), 71 (2022)
12. P.Wang, Y.Yuan, C.Zhao, X.Q.Wang*, X.T.Zheng, X.Rong, T.Wang, B.W.Sheng, Y.Q.Zhang, L.F.Bian, X.L.Yang, F.J.Xu, Z.X.Qin, X.Z.Li, X.X.Zhang*, and B.Shen*, Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires, Nano Letters, 16(2), 1328 (2016)
13. S.Zhang, N.Tang*, W.F.Jin, J.X.Duan, X.W.He, X.Rong, C.G.He, L.S.Zhang, X.D.Qin, L.Dai, Y.H.Chen, W.K.Ge and B.Shen*, Generation of Rashba Spin-Orbit Coupling in CdSe Nanowire by Ionic Liquid Gate, Nano Letters, 15(2), 1152 (2015)
14. C.M.Yin, H.T.Yuan, X.Q.Wang*, S.T.Liu, S.Zhang, N.Tang, F.J.Xu, Z.Y.Chen, H.Shimotani, Y.Iwasa, Y.H.Chen, W.K.Ge and B.Shen*, Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN, Nano Letters, 13(5), 2024 (2013)
15. F.C.Lu, N.Tang*, S.Y.Huang, M.Larsson, I.Maximov, M.Graczyk, J.X.Duan, S.D.Liu, W.K.Ge, F.J.Xu and B.Shen*, Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact, Nano Letters, 13(10), 4654 (2013)
16. T.Li, J.Wei*, M.Zhang, J.J.Yu, Y.H.Lao, S.H.Liu, M.Zhong, J.W.Cui, J.J.Yang, H.Yang, X.L.Yang, Z.Y.Zheng, M.J.Wang, K.J.Chen, B.Shen*, Polarization enhanced GaN complementary logic circuits with short propagation delay, Proceeding of International Electron Devices Meeting (IEDM), Session 16-1, (San Francisco, USA, 2024)
17. J.J.Yang, J.J.Yu, S.H.Liu, H.Chang, Y.H.Lao, H.Yang, T.Li, X.LYang, J.Y.Wang, X.S.Liu, Y.Wang, M.J.Wang, B.Shen*, and J.Wei*, 10-kVE-mode GaN lateral superjunction transistor, Proceeding of International Electron Devices Meeting (IEDM), Session 25-4, (San Francisco, USA, 2024)
18. J.W.Cui, J.Wei*, M.J.Wang*, Y.L.Wu, J.J.Yang, T.Li, J.J.Yu, H.Yang, X.L.Yang, J.Y.Wang, X.S.Liu, D.Ueda, and B.Shen*, 6500-V E-mode active-passivation p-GaN gate HEMT with ultralow dynamic RON, Proceeding of International Electron Devices Meeting (IEDM), Session 26-1, (San Francisco, USA, 2023)
19. J.J.Yang, J.Wei*, M.J.Wang*, M.Q.Nuo, H.Yang, T.Li, J.J.Yu, X.L.Yang, Y.L.Hao, J.Y.Wang, B.Shen*, 650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk, Proceeding of International Electron Devices Meeting (IEDM), Session 9-6, (San Francisco, USA, 2023)
20. J.J.Yang, J.Wei*, M.J.Wang*, T.Li, J.J.Yu, X.L.Yang, J.Y.Wang, Y.L.Hao, and B.Shen*, Simultaneously Achieving Large Gate Swing and Enhanced Threshold Voltaoge Stability in Metal/Insulator/p-GaN Gate HEMT, Proceeding of International Electron Devices Meeting (IEDM), Session 9-4, (San Francisco, USA, 2023)