Impact Factor:0.0
DOI number:10.1103/PhysRevB.97.115416
Journal:Phys. Rev. B
Abstract:Recently, constructing van der Waals (vdW) heterojunctions by stacking different two-dimensional (2D) materials has been considered to be effective strategy to obtain the desired properties. Here, through first-principles calculations, we find theoretically that the 2D n-InSe/p-GeSe(SnS) vdW heterojunctions are the direct-band-gap semiconductor with typical type-II band alignment, facilitating the effective separation of photogenerated electron and hole pairs. Moreover, they possess the high optical absorption strength (∼105), broad spectrum width, and excellent carrier mobility (∼103cm2V−1s−1). Interestingly, under the influences of the interlayer coupling and external electric field, the characteristics of type-II band alignment is robust, while the band-gap values and band offset are tunable. These results indicate that 2D n-InSe/p-GeSe(SnS) heterojunctions possess excellent optoelectronic and transport properties, and thus can become good candidates for next-generation optoelectronic nanodevices.
Indexed by:Journal paper
Discipline:Natural Science
First-Level Discipline:Physics
Volume:97
Page Number:15416
Translation or Not:no
Included Journals:SCI
Date of Publication:2018-03-15