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Main positions:博士生导师
Degree:Doctoral degree
Status:Employed
School/Department:凝聚态物理与材料物理研究所

史俊杰

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Gender: Male

Education Level: Postgraduate (Doctoral)

Administrative Position: 教授

Alma Mater: 澳大利亚Macquarie大学

Paper Publications

Band Gap Opening of Graphene by Forming Heterojunctions with 2D Carbonitrides Nitrogenated Holey Graphene, g-C3N4, and g-CN: Electric Field Effect
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DOI number:10.1021/acs.jpcc.6b03308
Journal:J. Phys. Chem. C
Abstract:To solve a challenging issue, i.e., the gap opening of graphene, we designed several heterojunctions of graphene and other two-dimensional carbonitride materials with natural holes in their monolayers, namely, nitrogenated holey graphene (NHG), g-C3N4, and g-CN, to destroy graphene’s sublattice symmetry and we investigated their electronic structures by first-principles calculations, in which the external electric field effect was also considered. We found that the heterojunctions, except for that with g-CN, have a direct band gap and that their important band edge states are dominated mainly by their graphene layer. The electric field can open band gaps and reduce the effective mass of electron and hole. The graphene/NHG has a large band gap (186.6 meV) and electron effective mass, which can be reduced from 1.31 to 0.014 m0 by applying an electric field of 0.4 V/Å. The NHG/graphene/NHG has the largest band gap of 250.7 meV among all of the graphene-based heterojunctions. The band gap of g-C3N4/graphene/g-C3N4 can be enlarged from 76.8 to 85.5 meV by applying a perpendicular electric field (0.6 V/Å). Interestingly, the external electric field can also convert the indirect band gap of graphene/g-CN into a direct one of 83.3 meV. Our results are useful for fast graphene-based nano-optoelectronic devices.
Indexed by:Journal paper
Discipline:Natural Science
First-Level Discipline:Physics
Volume:120
Issue:20
Page Number:11299–11305
Translation or Not:no
Included Journals:SCI
Date of Publication:2016-05-09

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