史俊杰
Gender: Male
Education Level: Postgraduate (Doctoral)
Administrative Position: 教授
Alma Mater: 澳大利亚Macquarie大学
Paper Publications
-
[11] Origin of the wide band gap from 0.6 to 2.3 eV in photovoltaic material InN: quantum confinement from surface nanostructure, J. Mater. Chem. A, 4, 17412-17418, 2016.
-
[12] Anomalous Light-Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure, J. Phys. Chem. Lett., 7, 2888-2892, 2016.
-
[13] Band Gap Opening of Graphene by Forming Heterojunctions with 2D Carbonitrides Nitrogenated Holey Graphene, g-C3N4, and g-CN: Electric Field Effect, J. Phys. Chem. C, 120, 11299–11305, 2016.
-
[14] Improvement of n-type conductivity in hexagonal boron nitride monolayer by doping, strain and adsorption, RSC Advances, 6, 29190-29196, 2016.
-
[15] Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations, Sci. Rep., 6, 21786, 2016.
-
[16] Breakthrough of the p-type doping bottleneck in ZnO by inserting ultrathin ZnX (X=S, Se and Te) layer doped with NX or AgZn, J. Phys. D: Appl. Phys., 49, 095104, 2016.
-
[17] Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect, ACS Nano, 9, 9276-9283, 2015.
-
[18] Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m/(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation, New J. Phys., 16, 113065, 2014.
-
[19] Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect, Sci. Rep., 4, 6710, 2014.
-
[20] Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells, Acta Materialia, 59, 2773-2782, 2011.