史俊杰
点赞：
史俊杰
点赞：
论文成果
2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene-Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7×104 cm2V-1s-1
发布时间：2020-06-02点击次数：
影响因子：
25.809
发表刊物：
Adv. Mater.
关键字：
Ca3Sn2S7 monolayers, direct bandgap semiconductors, graphene-like linear electronic dispersion, strong optical absorption, ultrahigh carrier mobility
摘要：
Graphene, a star 2D material, has attracted much attention because of its unique properties including linear electronic dispersion, massless carriers, and ultrahigh carrier mobility (104–105 cm2 V−1 s−1). However, its zero bandgap greatly impedes its application in the semiconductor industry. Opening the zero bandgap has become an unresolved worldwide problem.
Here, a novel and stable 2D Ruddlesden–Popper-type layered chalcogenide perovskite semiconductor Ca3Sn2S7 is found based on first-principles GW calculations, which exhibits excellent electronic, optical, and transport properties, as well as soft and isotropic mechanical characteristics. Surprisingly, it has a graphene-like linear electronic dispersion, small carrier effective mass (0.04 m0), ultrahigh room-temperature carrier mobility (6.7 × 104 cm2 V−1 s−1), Fermi velocity (3 × 105 m s−1), and optical absorption coefficient (105 cm−1). Particularly, it has a direct quasi-particle bandgap of 0.5 eV, which realizes the dream of opening the graphene bandgap in a new way. These results guarantee its application in infrared optoelectronic and high-speed electronic devices.
论文类型：
期刊论文
学科门类：
理学
一级学科：
物理学
卷号：
31
页面范围：
1905643
是否译文：
否
发表时间：
2019-11-04
收录刊物：
SCI
附件：
上一条：Two-Dimensional 111-Type In-Based Halide Perovskite Cs3In2X9 (X=Cl, Br, I) with Optimal Band Gap for Photovoltaics and Defect-Insensitive Blue Emission
下一条：Optimized band gap and fast interlayer charge transfer in two-dimensional perovskite oxynitride Ba2NbO3N and Sr2NbO3N/Ba2NbO3N bonded heterostructure visible-light photocatalysts for overall water splitting