史俊杰
点赞：
史俊杰
点赞：
论文成果
Two-dimensional n-InSe/p-GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance
发布时间：2020-06-08点击次数：
影响因子：
0.0
DOI码：
10.1103/PhysRevB.97.115416
发表刊物：
Phys. Rev. B
摘要：
Recently, constructing van der Waals (vdW) heterojunctions by stacking different two-dimensional (2D) materials has been considered to be effective strategy to obtain the desired properties. Here, through first-principles calculations, we find theoretically that the 2D n-InSe/p-GeSe(SnS) vdW heterojunctions are the direct-band-gap semiconductor with typical type-II band alignment, facilitating the effective separation of photogenerated electron and hole pairs. Moreover, they possess the high optical absorption strength (∼105), broad spectrum width, and excellent carrier mobility (∼103cm2V−1s−1). Interestingly, under the influences of the interlayer coupling and external electric field, the characteristics of type-II band alignment is robust, while the band-gap values and band offset are tunable. These results indicate that 2D n-InSe/p-GeSe(SnS) heterojunctions possess excellent optoelectronic and transport properties, and thus can become good candidates for next-generation optoelectronic nanodevices.
论文类型：
期刊论文
学科门类：
理学
一级学科：
物理学
卷号：
97
页面范围：
15416
是否译文：
否
发表时间：
2018-03-15
收录刊物：
SCI
附件：