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Degree:Doctoral degree
Status:Employed
School/Department:凝聚态物理与材料物理研究所

王新强

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Gender: Male

Alma Mater: 吉林大学

Paper Publications

Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and hightemperature alternation technique
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Impact Factor:3.545
DOI number:10.1039/c5ce01159k
Journal:CrystEngComm
Indexed by:Journal
Document Type:J
Translation or Not:no
First Author:X. Zhang
Correspondence Author: B. Shen,F. J. Xu
All the Authors: X. Q. Wang, N. Tang, X. L. Yang, Z. X. Qin, J. P. Cheng, J. Huang, L. S. Zhang, C. G. He,J. M. Wang
Date of Publication:2015-06-19