Impact Factor:3.791
DOI number:10.1063/1.5017153
Journal:Applied Physics Letters
Indexed by:Journal
Document Type:J
Translation or Not:no
First Author:Huapeng Liu
Correspondence Author:Xinqiang Wang
All the Authors: and Bo Shen, Weikun Ge, Fujun Xu, Xuelin Yang, Jian Zhang, Mo Li, Xin Rong, Tao Wang, Bowen Sheng, Ping Wang, Xiantong Zheng,Zhaoying Chen
Date of Publication:2018-04-16
王新强
+
Gender: Male
Alma Mater: 吉林大学
Paper Publications
High-electron-mobility InN epilayers grown on silicon substrate
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