Impact Factor:1.797
DOI number:10.1016/j.jcrysgro.2016.04.055
Journal:Journal of Crystal Growth
Indexed by:Journal
Document Type:J
Translation or Not:no
First Author:Z.Y. Xu
Correspondence Author: B. Shen,F.J. Xu
All the Authors: X.Q. Wang, Z.J. Yang , X. Zhang , J.M. Wang ,C.C. Huang
Date of Publication:2016-04-27
王新强
+
Gender: Male
Alma Mater: 吉林大学
Paper Publications
Electrical properties of GaN-based heterostructures adopting InAlN/
AlGaN bilayer barriers
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