Degree:Doctoral degree Status:Employed School/Department:凝聚态物理与材料物理研究所
Gender: Male
Alma Mater: 吉林大学
[31] Xinqiang Wang, Bo Shen, Weikun Ge, Akihiko Yoshikawa, Hiroshi Harima, Xin Rong, Tao Wang, Ping Wang, Ding Wang, Kumsong Kim, Jingyang Sui, and Zhaoying Chen, Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering, Superlattices and Microstructures, 2018.
[32] Xinqiang Wang, and Bo Shen, Yuzhen Tong, Kebin Shi, Weikun Ge, Jian Zhang, Mo Li, Shangfeng Liu, Liuyun Yang, Duo Li, Xin Rong, Tao Wang, Zhaoying Chen, Ping Wang, Dashan Dong, Bowen Sheng, and Shuanglong Liu, Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers, Applied Physics Letters, 2018.
[33] Xinqiang Wang, and Bo Shen, Weikun Ge, Fujun Xu, Xuelin Yang, Jian Zhang, Mo Li, Xin Rong, Tao Wang, Bowen Sheng, Ping Wang, Xiantong Zheng, Zhaoying Chen, and Huapeng Liu, High-electron-mobility InN epilayers grown on silicon substrate, Applied Physics Letters, 2018.
[34] Xinqiang Wang, Yonghai Chen, Jian Zhang, Mo Li, Ping Liang, Zhaoying Chen, Yu Liu, Ping Wang, Hongwei Liang, Wei Huang, and Xiantong Zheng, Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope, Journal of Nanoscience and Nanotechnology, 2018.
[35] Xinqiang Wang, and Bo Shen, Weikun Ge, Jian Zhang, Mo Li, Shigenori Ueda5, Masatomo Sumiya, Liwen Sang, Xiantong Zheng, Ding Wang, Ping Wang, Shitao Liu, and Xiaoxiao Sun, Determination of the transition point from electron accumulation to depletion at the surface of InxGa1−xN films, Applied Physics Express, 2018.
[36] T. A. Komissarova, and S. V. Ivanov, A. Yoshikawa, X. Wang, P. Paturi, V. N. Jmerik, J. Law, E. Kampert, and T. A. Komissarova, Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE, Applied Physics Letters, 2018.
[37] X. Q. Wang, T. Schulz, L. Lymperakis, and J. Neugebauer, M. Albrecht, M. Siekacz, C. Chèze, B. Shen, X. Zheng, Z. Chen, M. Anikeeva, C. Freysoldt, and L. Lymperakisg, Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells, PHYSICAL REVIEW MATERIALS, 2018.
[38] Xinqiang Wang, Hongwei Liang, Jian Zhang, Mo Li, Xin Rong, Ding Wang, Ling Chen, Yixin Wang, Bowen Sheng, Tao Wang, Zhaoying Chen, Xiaoxiao Sun, Ping Wang, and Xiantong Zheng, Effect of indium droplets on growth of InGaN film by molecular beam epitaxy, Superlattices and Microstructures, 2017.
[39] Xinqiang Wang, AND BO SHEN, WEIKUN GE, FUJUN XU, XUELIN YANG, JIAN ZHANG, MO LI, XIANTONG ZHENG, BOWEN SHENG, TAO WANG, PING WANG, and XIAOXIAO SUN, Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN, Optics Express, 2017.
[40] Xinqiang Wang, and Bo Shen, Weikun Ge, Jian Zhang, Mo Li, Andreas Waag, Shunfeng Li, Ping Wang, Jiandong Wei, and Xiaoxiao Sun, Anomalous surface potential behavior observed in InN by photoassisted Kelvin probe force microscopy, Applied Physics Letters, 2017.
