Degree:Doctoral degree Status:Employed School/Department:凝聚态物理与材料物理研究所
Gender: Male
Alma Mater: 吉林大学
[51] Bo Shen, Xixiang Zhang, Xinqiang Wang, Jian Zhang, Zhixin Qin, Fujun Xu, Xuelin Yang, Zhaoying Chen, Xiantong Zheng, Xin Rong, Mo Li, Xiaoxiao Sun, Bowen Sheng, Chih-Shan Tan, Tao Wang, and Ping Wang, Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods, Advanced Functional Materials, 2017.
[52] Xinqiang Wang, Bo Shen, Weikun Ge, Zhixin Qin, Fujun Xu, Xuelin Yang, Tao Wang, Xin Rong, Ping Wang, Zhilong Li, Xiantong Zheng, and Zhaoying Chen, Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs, Applied Physics Letters, 2016.
[53] Bo Shen, Xinqiang Wang , Junjie Shi, Weikun Ge , Zhixin Qin , Xuelin Yang , Fujun Xu , Peng Jin , Victor P. Martovitsky , Vladimir I. Kozlovsky , Viacheslav V. Ratnikov , Alexey A. Toropov , Valentin N. Jmerik , Martin Albrecht , Tobias Schulz , Tao Wang , Chenguang He , Weiying Wang , Ping Wang , Guang Chen , Xinhe Jiang , Sergey V. Ivanov , and Xin Rong, High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure, Advanced Materials, 2016.
[54] Lun Dai, Xinqiang Wang, Bowen Sheng, Yilun Wang, Kun Zhang, Hui Zhang, and Yi Wan, Large-Scale Synthesis and Systematic Photoluminescence Properties of Monolayer MoS2 on Fused Silica, ACS Applied Materials & Interfaces, 2016.
[55] B. Shen, F.J. Xu, X.Q. Wang, Z.J. Yang , L. Lu , J.M. Wang , and Z.Y. Xu, High-resistance GaN epilayers with low dislocation density via growth mode modification, Journal of Crystal Growth, 2016.
[56] B. Shen, F.J. Xu, X.Q. Wang, Z.J. Yang , X. Zhang , J.M. Wang , C.C. Huang , and Z.Y. Xu, Electrical properties of GaN-based heterostructures adopting InAlN/ AlGaN bilayer barriers, Journal of Crystal Growth, 2016.
[57] FujunXu, ZhixinQin, WeikunGe & Bo Shen, XinqiangWang, ShanZhang, Mengjun Hou, JiamingWang, LishengZhang, and Chenguang He, Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system, Scientific Reports, 2016.
[58] Fujun Xu, Zhixin Qin, Bo Shen, Xinqiang Wang, Shan Zhang , Weiwei Guo , Mengjun Hou , Mingxing Wang , Lisheng Zhang , and Chenguang He, Growth of high quality n-Al0.5Ga0.5N thick films by MOCVD, Materials Letters, 2016.
[59] Fujun Xu, Zhixin Qin, and Bo Shen, Weikun Ge, Xinqiang Wang, Shan Zhang, Mengjun Hou, Jiaming Wang, Lisheng Zhang, and Chenguang He, Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy, Applied Physics Express, 2016.
[60] Bo Shen, Xinqiang Wang , Pingheng Tan, Fujun Xu , Huapeng Liu , Ping Wang , Jianhai Pan , Guang Chen , and Xin Rong, Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy, Superlattices and Microstructures, 2016.
