Xinqiang Wang, Mark Holmes, Bo Shen, Yasuhiko Arakawa, Weikun Ge, Jian Zhang, Mo Li, Kang Gao, Ling Chen, Zhaoying Chen, Duo Li, Tao Wang, Ping Wang and Xiaoxiao Sun.Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure.Applied Physics Letters,2019,10.1063/1.5100323 Xinqiang Wang, Bo Shen, Weikun Ge, Tongjun Yu, Junjie Shi, Zhixin Qin, Fujun Xu, Xuelin Yang, Ling Chen, Duo Li, Liuyun Yang, Fang Liu, Huapeng Liu, Ding Wang, Yixin Wang, Zhaoying Chen, Xiantong Zheng, Xin Rong, Bowen Sheng, Pu Huang, Xiaoxiao Sun, Hui Wang, Tao Wang and Ping Wang.Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN.Advanced Functional Materials,2019,10.1002/adfm.201902608 Xinqiang Wang, Yuzhen Tong, Bo Shen, Huapeng Liu, Liuyun Yang, Shangfeng Liu, Fang Liu, Ding Wang, Patrick Quach and Junyan Cheng.Dominant Influence of Interface Roughness Scattering on the Performance of GaN Terahertz Quantum Cascade Lasers.Nanoscale Research Letters,2019,10.1186/s11671-019-3043-6 Xinqiang Wang, Mark Holmes, Bo Shen, Yasuhiko Arakawa, Weikun Ge, Jian Zhang, Mo Li, Kang Gao, Zhaoying Chen, Tao Wang, Bowen Sheng, Ping Wang and Xiaoxiao Sun.Single-photon emission from a further confined InGaN/GaN quantum disc via reverse-reaction growth.Quantum Engineering,2019,10.1002/que2.20 Xinqiang Wang, Bo Shen, Jürgen Christen, André Strittmatter, Zhaoying Chen, Jürgen Bläsing, Peter Veit, Gordon Schmidt, Ping Wang, Xiantong Zheng, Frank Bertram and Bowen Sheng.Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film.Japanese Journal of Applied Physics,2019,10.7567/1347-4065/ab1a5b Xinqiang Wang, B. Shen, W. K. Ge, J. Zhang, S. P. Guo, W. Tan, X. Y. Shi, J. Y. Cheng, X. Rong, P. Wang, J. Su, H. P. Liu, B. W. Sheng, L. Y. Yang, T. Wang, Z. Y. Chen and Ding Wang.Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire.Applied Physics Letters,2019,10.1063/1.5080470 Xinqiang Wang, Yinong Liu, Bo Shen, Weikun Ge, Jian Zhang, Wei Tan, Xiangyang Shi, Ping Wang, Xin Rong, Shaojun Lin, Bowen Sheng, Liuyun Yang, Tao Wang, Zhaoying Chen, Juan Su and Ding Wang.Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire.Advanced Electronic Materials,2018,10.1002/aelm.201800651 Xinqiang Wang, Bo Shen, Jing Yang, Fujun Xu, Xuelin Yang, Xin Rong, Ali Imran, Ding Wang, Zhaoying Chen, Xiantong Zheng, Ping Wang, Fang Liu, Kumsong Kim and Jiaqi Wei.β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy.Journal of Semiconductors,2018,10.1088/1674-4926/40/1/012802 Xinqiang Wang, Fujun Xu and Bo Shen, Xuelin Yang, Jian Zhang, Mo Li, Xin Rong 1 ID , Tao Wang, Huapeng Liu, Bowen Sheng, Xiantong Zheng, Qi Qi, Ping Wang, Zhaoying Chen and Shibo Wang.Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer.Sensors,2018,10.3390/s18072065 and Bo Shen, Xixiang Zhang, Xinqiang Wang, Weikun Ge, Fujun Xu, Xuelin Yang, Jian Zhang, Mo Li, Qiang Zhang, Xin He, Jun Li, Peng Li, Xi Lin, Jianpeng Cheng, Ding Wang, Weiwei Guo, Liuyun Yang, Xin Rong, Xiantong Zheng, Ping Wang, Xiaoxiao Sun, Zhaoying Chen and Tao Wang.High-Mobility Two-Dimensional Electron Gas at InGaN/ InN Heterointerface Grown by Molecular Beam Epitaxy.Advanced Science,2018,10.1002/advs.201800844