王新强
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王新强
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发表论文(2013-2022年)
Bo Shen, Xixiang Zhang, Xinqiang Wang, Jian Zhang, Zhixin Qin, Fujun Xu, Xuelin Yang, Zhaoying Chen, Xiantong Zheng, Xin Rong, Mo Li, Xiaoxiao Sun, Bowen Sheng, Chih-Shan Tan, Tao Wang and Ping Wang.Lattice-Symmetry-Driven Epitaxy of Hierarchical
GaN Nanotripods.Advanced Functional Materials,2017,10.1002/adfm.201604854
Xinqiang Wang, Bo Shen, Weikun Ge, Zhixin Qin, Fujun Xu, Xuelin Yang, Tao Wang, Xin Rong, Ping Wang, Zhilong Li, Xiantong Zheng and Zhaoying Chen.Positive temperature coefficient of
photovoltaic efficiency in solar cells based on
InGaN/GaN MQWs.Applied Physics Letters,2016,10.1063/1.4960765
Bo Shen, Xinqiang Wang , Junjie Shi, Weikun Ge , Zhixin Qin , Xuelin Yang , Fujun Xu , Peng Jin ,
Victor P. Martovitsky , Vladimir I. Kozlovsky , Viacheslav V. Ratnikov , Alexey A. Toropov , Valentin N. Jmerik , Martin Albrecht , Tobias Schulz , Tao Wang , Chenguang He , Weiying Wang , Ping Wang , Guang Chen , Xinhe Jiang , Sergey V. Ivanov and Xin Rong.High-Output-Power Ultraviolet Light Source from Quasi-2D
GaN Quantum Structure.Advanced Materials,2016,10.1002/adma.201600990
Lun Dai, Xinqiang Wang, Bowen Sheng, Yilun Wang, Kun Zhang, Hui Zhang and Yi Wan.Large-Scale Synthesis and Systematic Photoluminescence Properties of Monolayer MoS2 on Fused Silica.ACS Applied Materials & Interfaces,2016,10.1021/acsami.6b04540
B. Shen, F.J. Xu, X.Q. Wang, Z.J. Yang , L. Lu , J.M. Wang and Z.Y. Xu.High-resistance GaN epilayers with low dislocation density via growth mode modification.Journal of Crystal Growth,2016,10.1016/j.jcrysgro.2016.06.038
B. Shen, F.J. Xu, X.Q. Wang, Z.J. Yang , X. Zhang , J.M. Wang , C.C. Huang and Z.Y. Xu.Electrical properties of GaN-based heterostructures adopting InAlN/
AlGaN bilayer barriers.Journal of Crystal Growth,2016,10.1016/j.jcrysgro.2016.04.055
FujunXu, ZhixinQin, WeikunGe & Bo Shen, XinqiangWang, ShanZhang, Mengjun Hou, JiamingWang, LishengZhang and Chenguang He.Mechanism of stress-driven composition evolution during
hetero-epitaxy in a ternary AlGaN system.Scientific Reports,2016,10.1038/srep25124
Fujun Xu, Zhixin Qin, Bo Shen, Xinqiang Wang, Shan Zhang , Weiwei Guo , Mengjun Hou , Mingxing Wang , Lisheng Zhang and Chenguang He.Growth of high quality n-Al0.5Ga0.5N thick films by MOCVD.Materials Letters,2016,10.1016/j.matlet.2016.04.150
Fujun Xu, Zhixin Qin, and Bo Shen, Weikun Ge, Xinqiang Wang, Shan Zhang, Mengjun Hou, Jiaming Wang, Lisheng Zhang and Chenguang He.Effect of stress on the Al composition evolution in
AlGaN grown using metal organic vapor phase epitaxy.Applied Physics Express,2016,10.7567/APEX.9.051001
Bo Shen, Xinqiang Wang , Pingheng Tan, Fujun Xu , Huapeng Liu , Ping Wang , Jianhai Pan , Guang Chen and Xin Rong.Residual stress in AlN films grown on sapphire substrates by
molecular beam epitaxy.Superlattices and Microstructures,2016,10.1016/j.spmi.2016.02.050
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