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许福军

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Academic Title:

Degree:Doctoral degree

Status:Employed

School/Department:凝聚态物理与材料物理研究所

Paper Publications

Current position: Home / Scientific Research / Paper Publications
Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers
Date of Publication:2015-08-12 Hits:

Impact Factor:0.0
Journal:Scientific Reports
Volume:5
Page Number:13046
Translation or Not:no
Date of Publication:2015-08-12
Date of Publication:2015-08-12

Pre One:Epitaxial growth of AlN films on sapphire via a multilayer structure adopting low- and high- temperature alternation technique

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