xufujun Home--Paper Publications

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许福军

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Degree:Doctoral degree

Status:Employed

School/Department:凝聚态物理与材料物理研究所

Paper Publications

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[11] Crystal quality evolution of AlN films via high-temperature annealing under ambient N2 conditions, CrystEngComm, 17, 7496, 2018.
[12] High-quality AlN epitaxy on sapphire substrates with sputtered buffer layers, Superlattices and Microstructures, 105, 34, 2017.
[13] High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition, Scientific Reports, 7, 42747, 2017.
[14] High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography, Scientific Reports, 6,, 35934, 2016.
[15] Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system, Scientific Reports, 6, 25124, 2016.
[16] Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy, Applied Physics Express, 9, 051001, 2016.
[17] Epitaxial growth of AlN films on sapphire via a multilayer structure adopting low- and high- temperature alternation technique, CrystEngComm, 17, 7496, 2015.
[18] Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers, Scientific Reports, 5, 13046, 2015.

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