许福军
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Crystal quality evolution of AlN films via high-temperature annealing under ambient N2 conditions.CrystEngComm,17,7496,2018
High-quality AlN epitaxy on sapphire substrates with sputtered buffer layers.Superlattices and Microstructures,105,34,2017
High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition.Scientific Reports,7,42747,2017
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.Scientific Reports,6,,35934,2016
Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system.Scientific Reports,6,25124,2016
Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy.Applied Physics Express,9,051001,2016
Epitaxial growth of AlN films on sapphire via a multilayer structure adopting low- and high- temperature alternation technique.CrystEngComm,17,7496,2015
Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers.Scientific Reports,5,13046,2015
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