许福军
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Improved light extraction efficiency of AlGaN-based deep-ultraviolet light emitting diodes adopting Ag nanodots/Al reflective electrodes based on a highly transparent complex p-type layer,
Optics Express
2394.
Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates,
CrystEngComm
Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission,
Appl. Phys. Lett
2020,
116,
21210.
Strain evolution in AlN film grown on nano-patterned sapphire substrates,
Applied Physics Express
2019,
13,
015504.
Period size effect induced crystalline quality improvement of AlN on a nanopatterned sapphire substrate,
Japanese Journal of Applied Physics
2019,
58,
100912.
Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer,
Optical Express
2019,
27,
1458.
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