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Degree:Doctoral degree
Status:Employed
School/Department:凝聚态物理与材料物理研究所

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杨学林

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Gender: Male

Education Level: With Certificate of Graduation for Doctorate Study

Alma Mater: 北京大学

Patents

Current position: Home / Scientific Research / Patents
一种硅上高迁移率GaN基异质结构及其制备方法
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Authorization Date:2017-11-07
First Author:杨学林等
Authorization Date: 2017-11-07

Pre One:用于检测氮化镓基异质结构中陷阱态的检测方法和结构

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