Patents
化合物半导体中替代阳离子位置的杂质缺陷浓度的检测方法
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Authorization Date:2020-05-05
First Author:杨学林等
Authorization Date: 2020-05-05
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Gender:Male
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School/Department:凝聚态物理与材料物理研究所
Professional Title:professor of engineering
Degree:Doctoral degree
Authorization Date:2020-05-05
First Author:杨学林等
Authorization Date: 2020-05-05