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Basic Information

Gender:Male
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School/Department:凝聚态物理与材料物理研究所
Professional Title:professor of engineering
Degree:Doctoral degree

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Patents

化合物半导体中替代阳离子位置的杂质缺陷浓度的检测方法

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Authorization Date:2020-05-05
First Author:杨学林等
Authorization Date: 2020-05-05

Next One:一种InAlGaN/GaN异质结构外延方法

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