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Degree:Doctoral degree
Status:Employed
School/Department:凝聚态物理与材料物理研究所

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杨学林

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Gender: Male

Education Level: With Certificate of Graduation for Doctorate Study

Alma Mater: 北京大学

Patents

Current position: Home / Scientific Research / Patents
化合物半导体中替代阳离子位置的杂质缺陷浓度的检测方法
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Authorization Date:2020-05-05
First Author:杨学林等
Authorization Date: 2020-05-05

Next One:一种InAlGaN/GaN异质结构外延方法

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