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俞大鹏
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论文成果
Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
发布时间:2019-11-13点击次数:
发表刊物:
JOURNAL OF APPLIED PHYSICS
备注:
103529,2010
是否译文:
否
全部作者:
Tao, Y. B.; Chen, Z. Z.; Zhang, F. F.; 等