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俞大鹏
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论文成果
The origin and evolution of V-defects in InxAl1-xN epilayers grown by metalorganic chemical vapor deposition
发布时间:2019-11-13点击次数:
发表刊物:
APPLIED PHYSICS LETTERS
备注:
231909,2009
是否译文:
否
全部作者:
Miao, Z. L.; Yu, T. J.; Xu, F. J.; 等