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俞大鹏
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俞大鹏
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论文成果
Structural and electrical properties of CeO2/Si with nitrided interfacial layer by nitrogen ion beam bombardment
发布时间:2019-11-13点击次数:
发表刊物:
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
备注:
2001
是否译文:
否
全部作者:
Kang, JF; Liu, XY; Han, RQ et al.