Passivated p-type silicon: Hole injection tunable anode material for organic light emission,,  APPLIED PHYSICS LETTERS 92, 073303 Published: FEB 18 2008  Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode,  CHEMICAL PHYSICS LETTERS 400, 401-405 DEC 21 2004  Room-temperature 1.54 um electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering,  JOURNAL OF APPLIED PHYSICS 90, 5835 DEC 1 2001 

暂无内容