主要论文目录（50篇）：
1. J.M. Wang, N. Xie, F.J. Xu, L.S. Zhang, J. Lang, X.N. Kang, Z.X. Qin, X.L. Yang, N. Tang, X.Q.Wang, W.K. Ge, B. Shen, Group-III nitride heteroepitaxial films approaching bulk-class quality, Nature Materials, 22, 853 (2023)
2. S. Wu, X.L. Yang, H.S. Zhang, L. Shi, Q. Zhang, Q.Y. Shang, Z.M. Qi, Y. Xu, J. Zhang, N. Tang, X.Q. Wang, W.K. Ge, K. Xu and B. Shen, Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN, Physical Review Letters, 121(14), 145505 (2018)
3. X.W. He, B. Shen, Y.H. Chen, Q. Zhang, K. Han, C.M. Yin, N. Tang, F.J. Xu, C.G. Tang, Z.J. Yang, Z.X. Qin, G.Y. Zhang and Z.G. Wang, Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures at room temperature, Physical Review Letters, 101(14), 147402 (2008)
4. X. Rong, X.Q. Wang, S.V. Ivanov, X.H. Jiang, G. Chen, P. Wang, W.Y. Wang, C.G. He, T. Wang, T. Schulz, M. Albrecht, P. Jin, F.J. Xu, X.L. Yang, Z.X. Qin, W.K. Ge, J.J. Shi and B. Shen, High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure, Advanced Materials, 28(36), 7978 (2016)
5. F. Liu, T. Wang, Z.H. Zhang, T. Shen, X. Rong, B.W. Sheng, L.Y. Yang, D. Li, J.Q. Wei, S.S. Sheng, X.G. Li, K.H. Liu, X.Z. Li, B. Shen and X.Q. Wang, Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration, Advanced Materials, 34(5), 2106814 (2022)
6. D. Li, S.F. Liu, Z.Y. Qian, Q.F. Liu, K. Zhou, D.D. Liu, S.S. Sheng, B.W. Sheng, F. Liu, Z.Y. Chen, P. Wang, T. Wang, X. Rong, W.K. Ge, B. Shen, and X.Q. Wang, Deep-Ultraviolet Micro-LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously, Advanced Materials, 34(19), 2109765 (2022)
7. J.M. Wang, M.X. Wang, F.J. Xu, B.Y. Liu, J. Lang, N. Zhang, X.N. Kang, Z.X. Qin, X.L. Yang, X.Q. Wang, W.K. Ge and B. Shen, Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping, Light-Science & Applications, 11(1), 71 (2022)
8. X.X. Sun, P. Wang, T. Wang, L. Chen, Z.Y. Chen, K. Gao, T. Aoki, M. Li, J. Zhang, T. Schulz, M. Albrecht, W.K. Ge, Y. Arakawa, B. Shen, and X.Q. Wang, Single-photon emission from isolated monolayer islands of InGaN, Light-Science & Applications, 9(1), 159 (2020)
9. P. Wang, Y. Yuan, C. Zhao, X.Q. Wang, X.T. Zheng, X. Rong, T. Wang, B.W. Sheng, Q.X. Wang, Y.Q. Zhang, L.F. Bian, X.L. Yang, F.J. Xu, Z.X. Qin, X.Z. Li, X.X. Zhang* and B. Shen, Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires, Nano Letters, 16(2), 1328 (2016)
10. S. Zhang, N. Tang, W.F. Jin, J.X. Duan, X. He, X. Rong, C.G. He, L.S. Zhang, X.D. Qin, L. Dai, Y.H. Chen, W.K. Ge and B. Shen, Generation of Rashba Spin-Orbit Coupling in CdSe Nanowire by Ionic Liquid Gate, Nano Letters, 15(2), 1152 (2015)
11. C.M. Yin, H.T. Yuan, X.Q. Wang, S.T. Liu, S. Zhang, N. Tang, F.J. Xu, Z.Y. Chen, H. Shimotani, Y. Iwasa, Y.H. Chen, W.K. Ge and B. Shen, Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN, Nano Letters, 13(5), 2024 (2013)
12. F.C. Lu, N. Tang, S.Y. Huang, M. Larsson, I. Maximov, M. Graczyk, J.X. Duan, S.D. Liu, W.K. Ge, F.J. Xu and B.Shen, Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact, Nano Letters, 13(10), 4654 (2013)
13. S.S. Sheng, T. Wang, S.F. Liu, F. Liu, B.W. Sheng, Y. Yuan, D. Li, Z.Y. Chen, R.C. Tao, L. Chen, B.Q. Zhang, J.J. Yang, P. Wang, D. Wang, X.X. Sun, J.M. Zhang, J. Xu, W.K. Ge, B. Shen and X.Q. Wang, Atomic-Scale Investigation of the Lattice-Asymmetry-Driven Anisotropic Sublimation in GaN, Advanced Science, 9(22), 2106028 (2022)
14. X.C. Liu, N. Tang, S.X. Zhang, X.Y. Zhang, H.M. Guan, Y.F. Zhang, X. Qian, Y. Ji, W.K. Ge and B. Shen, Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature, Advanced Science, 7(13), 1903400 (2020)
15. T. Wang, X.Q. Wang, Z.Y. Chen, X.X. Sun, P. Wang, X.T. Zheng, X. Rong, L.Y. Yang, W.W. Guo, D. Wang, X.L. Yang, F.J. Xu, W.K. Ge, X.X. Zhang and B. Shen, High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy, Advanced Science, 5(9), 1800844 (2018)
16. Z.H.Chen, X.L. Yang, X. Liu, J.F. Shen, Z.D. Cai; H.C. Yang, X.Y. Fu, M.J. Wang, N. Tang, F.J. Xu, X.Q. Wang, W.K. Ge, B.Shen, Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates, Advanced Electronic Materials, 9, 2300148 (2023)
17. D.S. Liu, L. Hu, X.L. Yang, Z.H. Zhang, H.D. Yu, F.W. Zheng, Y.X. Feng, J.Q. Wei, Z.D. Cai, Z.H. Chen, C. Ma, F.J. Xu, X.Q. Wang, W.K. Ge, K.H. Liu, B. Huang and B. Shen, Polarization-Driven-Orientation Selective Growth of Single-Crystalline III-Nitride Semiconductors on Arbitrary Substrates, Advanced Functional Materials, 32(14), 2113211 (2022)
18. X.Y. Zhang, N. Tang, L.Y. Yang, C. Fang, C.H. Wan, X.C. Liu, S.X. Zhang, Y.F. Zhang, X.Q. Wang, Y. Lu, W.K. Ge, X.F. Han and B. Shen, Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier, Advanced Functional Materials, 31(15), 2009771 (2021)
19. L.Y. Yang, X.Q. Wang, T. Wang, J.Y. Wang, W.J. Zhang, P. Quach, P. Wang, F. Liu, D. Li, L. Chen, S.F. Liu, J.Q. Wei, X.L. Yang, F.J. Xu, N. Tang, W. Tan, J. Zhang, W.K. Ge, X.S. Wu, C. Zhang and B. Shen, Three Subband Occupation of the Two-Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures, Advanced Functional Materials, 30(46), 2004450 (2020)
20. Y.X. Feng, X.L. Yang, Z.H. Zhang, D. Kong, J. Zhang, K.H. Liu, X.Z. Li, J.F. Shen, F. Liu, T. Wang, P.F. Ji, F.J. Xu, N. Tang, T.J. Yu, X.Q. Wang, D.P. Yu, W.K. Ge and B. Shen, Epitaxy of Single-Crystalline GaN Film on CMOS-Compatible Si(100) Substrate Buffered by Graphene, Advanced Functional Materials, 29(42), 1905056 (2019)
21. P. Wang, X.Q. Wang, T. Wang, C.S. Tan, B.W. Sheng, X.X. Sun, M. Li, X. Rong, X.T. Zheng, Z.Y. Chen, X.L. Yang, F.J. Xu, Z.X. Qin, J. Zhang, X.X. Zhang and B. Shen, Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods, Advanced Functional Materials, 27(9), 1604854 (2017)
22. S.X. Zhang, N. Tang, X.Y. Zhang, X.C. Liu, H.M. Guan, Y.F. Zhang, X. Qian, Y. Ji, W.K. Ge and B. Shen, Excitonic effects on electron spin orientation and relaxation in wurtzite GaN, Physical Review B, 104(12), 125202 (2021)
23. N. Tang, B. Shen, K. Han, F.C. Lu, Z.X. Qin and G.Y. Zhang, Abnormal Shubnikov-de Haas oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures in tilted magnetic fields, Physical Review B, 79(7), 073304 (2009)
24. N. Tang, B. Shen, X.W. He, K. Han, Z.J. Yang, Z.X. Qin, G.Y. Zhang, T. Lin, B. Zhu, W.Z. Zhou, L.Y. Shang and J.H. Chu, Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures, Physical Review B, 76(15), 155303 (2007)
25. N. Tang, B. Shen, M.J. Wang, Z.J. Yang, K. Xu, G.Y. Zhang, D.J. Chen, Y. Xia, Y. Shi, R. Zhang and Y.D. Zheng, Comment on "Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures", Physical Review B, 73(3), 037301 (2006)
26. Z.W. Zheng, B. Shen, R. Zhang, Y.S. Gui, C.P. Jiang, Z.X. Ma, G.Z. Zheng, S.L. Guo, Y. Shi, P. Han, Y.D. Zheng, T. Someya and Y. Arakawa, Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1-xN/GaN heterostructures, Physical Review B, 62(12), R7739 (2000)
27. J.J. Yang, J. Wei, Y.L. Wu, M.Q.Nuo, Z.H. Chen, X.L.Yang, M.J. Wang, B. Shen, 600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects, IEEE Electron Device Letters, 44,225 (2023)
28. Y.L. Wu, J. Wei, M.J. Wang, M.Q. Nuo, J.J. Yang, W. Lin, Z.Y. Zheng, L. Zhang, M.Y. Hua, X.L. Yang, Y.L. Hao, K.J. Chen, B. Shen, An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps, IEEE Electron Device Letters, 44, 25 (2023)
29. W. Lin, M.J. Wang, R.Y. Yin, J. Wei, C.P. Wen, B. Xie, Y.L. Hao and B. Shen, Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes, IEEE Electron Device Letters, 42(8), 1124 (2021)
30. Y. Li, M.J. Wang, R.Y. Yin, J. Zhang, M. Tao, B. Xie, Y.L. Hao, X.L. Yang, C.P. Wen and B. Shen, Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10(10) High On/Off Current Ratio and Low Specific On-Resistance, IEEE Electron Device Letters, 41(3), 329 (2020)
31. J.N. Gao, M.J. Wang, R.Y. Yin, S.F. Liu, C.P. Wen, J.Y. Wang, W.G. Wu, Y.L. Hao, Y.F. Jin and B. Shen, Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage, IEEE Electron Device Letters, 38(10), 1425 (2017)
32. S.X. Lin, M.J. Wang, F. Sang, M. Tao, C.P. Wen, B. Xie, M. Yu, J.Y. Wang, Y.L. Hao, W.G. Wu, J. Xu, K. Cheng and B. Shen, A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices, IEEE Electron Device Letters, 37(4), 377 (2016)
33. S.X. Lin, M.J. Wang, B. Xie, C.P. Wen, M. Yu, J.Y. Wang, Y.L. Hao, W.G. Wu, S. Huang, K.J. Chen and B. Shen, Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment, IEEE Electron Device Letters, 36(8), 757 (2015)
34. M.J. Wang, D.W. Yan, C. Zhang, B. Xie, C.P. Wen, J.Y. Wang, Y.L. Hao, W.G. Wu and B. Shen, Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed I-V Measurement, IEEE Electron Device Letters, 35(11), 1094 (2014)
35. Y. Wang, M.J. Wang, B. Xie, C.P. Wen, J.Y. Wang, Y.L. Hao, W.G. Wu, K.J. Chen and B. Shen, High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique, IEEE Electron Device Letters, 34(11), 1370 (2013)
36. S. Wu, X.L. Yang, Z.X. Wang, Z.W. Ouyang, H.Y. Huang, Q. Zhang, Q.Y. Shang, Z.H. Shen, F.J. Xu, X.Q. Wang, W.K. Ge and B. Shen, Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN, Applied Physics Letters, 120(24), 242101 (2022)
37. Y.X. Feng, H.R. Sun, X.L. Yang, K. Liu, J. Zhang, J.F. Shen, D.S. Liu, Z.D. Cai, F.J. Xu, N. Tang, T.J. Yu, X.Q. Wang, W.K. Ge and B. Shen, High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer, Applied Physics Letters, 118(5), 052104 (2021)
38. S. Wu, X.L. Yang, Q. Zhang, Q.Y. Shang, H.Y. Huang, J.F. Shen, X.G. He, F.J. Xu, X.Q. Wang, W.K. Ge and B. Shen, Direct evidence of hydrogen interaction with carbon: C-H complex in semi-insulating GaN, Applied Physics Letters, 116(26), 262101 (2020)
39. Y.X. Feng, X.L. Yang, J.P. Cheng, J. Zhang, P.F. Ji, J.F. Shen, A.Q. Hu, F.J. Xu, T.J. Yu, X.Q. Wang and B. Shen, Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates, Applied Physics Letters, 110(19), 192104 (2017)
40. A.Q. Hu, X.L. Yang, J.P. Cheng, L. Guo, J. Zhang, W.K. Ge, M.J. Wang, F.J. Xu, N. Tang, Z.X. Qin, X.Q. Wang and B. Shen, Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements, Applied Physics Letters, 108(4), 042107 (2016)
41. J.P. Cheng, X.L. Yang, L. Sang, L. Guo, A.Q. Hu, F.J. Xu, N. Tang, X.Q. Wang and B. Shen, High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology, Applied Physics Letters, 106(14), 142106 (2015)
42. L. Guo, X.L. Yang, Z.H. Feng, Y.J. Lv, J.P. Cheng, L. Sang, F.J. Xu, N. Tang, X.Q. Wang, W.K. Ge and B. Shen, Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field, Applied Physics Letters, 105(24), 242104 (2014)
43. C.M. Yin, B. Shen, Q. Zhang, F.J. Xu, N. Tang, L.B. Cen, X.Q. Wang, Y.H. Chen and J.L. Yu, Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain, Applied Physics Letters, 97(18), 181904 (2010)
44. S. Huang, B. Shen, F. Lin, N. Ma, F.J. Xu, Z.L. Miao, J. Song, L. Lu, F. Liu, Y. Wang, Z.X. Qin, Z.J. Yang and G.Y. Zhang, Ni diffusion and its influence on electrical properties of AlxGa1-xN/GaN heterostructures, Applied Physics Letters, 93(17), 172102 (2008)
45. X.W. He, B. Shen, Y.Q. Tang, N. Tang, C.M. Yin, F.J. Xu, Z.J. Yang, G.Y. Zhang, Y.H. Chen, C.G. Tang and Z.G. Wang, Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures under uniaxial strain, Applied Physics Letters, 91(7), 071912 (2007)
46. N. Tang, B. Shen, M.J. Wang, Z.J. Yang, K. Xu, G.Y. Zhang, T. Lin, B. Zhu, W.Z. Zhou and J.H. Chu, Effective mass of the two-dimensional electron gas and band nonparabolicity in AlxGa1-xN/GaN heterostructures, Applied Physics Letters, 88(17), 172115 (2006)
47. J. Lu, B. Shen, N. Tang, D.J. Chen, H. Zhao, D.W. Liu, R. Zhang, Y. Shi, Y.D. Zheng, Z.J. Qiu, Y.S. Gui, B. Zhu, W. Yao, J.H. Chu, K. Hoshino and Y. Arakawa, Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation, Applied Physics Letters, 85(15), 3125 (2004)
48. Z.W. Zheng, B. Shen, Y.S. Gui, C.P. Jiang, N. Tang, R. Zhang, Y. Shi, Y.D. Zheng, S.L. Guo, G.Z. Zheng, J.H. Chu, T. Someya and Y. Arakawa, Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-xN/GaN heterointerfaces, Applied Physics Letters, 82(12), 1872 (2003)
49. B. Shen, T. Someya, O. Moriwaki and Y. Arakawa, Effect of carrier confinement on photoluminescence from modulation-doped AlxGa1-xN/GaN heterostructures, Applied Physics Letters, 76(6), 679 (2000)
50. B. Shen, T. Someya and Y. Arakawa, Influence of strain relaxation of the AlxGa1-xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures, Applied Physics Letters, 76(19), 2746 (2000)