主要研究领域：
GaN基宽禁带半导体材料、物理与器件
主要研究方向：
1. GaN基异质结构的MOCVD外延生长和缺陷控制
2. GaN基异质结构中二维电子气的输运和自旋性质
3. GaN基功率和射频电子器件与器件物理
4. AlGaN基深紫外发光材料和器件
1995年迄今一直从事III族氮化物 (又称GaN基) 宽禁带半导体材料、物理和器件研究，在GaN基异质结构的大失配外延生长，强极化、高能带阶跃氮化物半导体载流子输运性质，GaN基射频电子器件研制等方面取得了一系列研究成果，在国内外同行中产生了一定影响。近年来带领其课题组在大尺寸Si衬底上GaN及其异质结构的MOCVD外延生长，GaN基功率电子器件研制，AlGaN基深紫外发光材料与器件，GaN基半导体缺陷物理、GaN基半导体本征自旋性质等方面取得了一系列在国内外同行中有一定影响的突破。先后主持和作为核心成员参加国家973计划项目，国家863计划项目，国家重点研发计划项目，国家自然科学基金重大、重点项目，教育部、北京市重点项目、以及军口项目等20多项科研课题，先后与华为、京东方、彩虹集团、广东光大集团和中国电科13所、55所等开展了一系列科研合作，承担了多个横向科研项目。迄今发表学术论文300多篇，论文被他引5000多次，主编和参与编写宽禁带半导体中英文专著4部，20多次担任本领域国际学术会议顾问委员会、程序委员会、组织委员会主席和委员，先后在国际学术会议上做邀请报告20多次，包括大会邀请报告4次，在国内学术会议上做大会邀请报告10多次，获得/申请国家发明专利80多件，其中有10多件实现了有偿转让。先后获国家技术发明二等奖、国家自然科学二等奖、江苏省科技进步一等奖和教育部科技进步一等奖，部分研究成果实现了产业化转移和国防应用。
主要论文目录（50篇）：
1. J.M. Wang, N. Xie, F.J. Xu, L.S. Zhang, J. Lang, X.N. Kang, Z.X. Qin, X.L. Yang, N. Tang, X.Q.Wang, W.K. Ge, B. Shen, Group-III nitride heteroepitaxial films approaching bulk-class quality, Nature Materials, 22, 853 (2023)
2. S. Wu, X.L. Yang, H.S. Zhang, L. Shi, Q. Zhang, Q.Y. Shang, Z.M. Qi, Y. Xu, J. Zhang, N. Tang, X.Q. Wang, W.K. Ge, K. Xu and B. Shen, Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN, Physical Review Letters, 121(14), 145505 (2018)
3. X.W. He, B. Shen, Y.H. Chen, Q. Zhang, K. Han, C.M. Yin, N. Tang, F.J. Xu, C.G. Tang, Z.J. Yang, Z.X. Qin, G.Y. Zhang and Z.G. Wang, Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures at room temperature, Physical Review Letters, 101(14), 147402 (2008)
4. X. Rong, X.Q. Wang, S.V. Ivanov, X.H. Jiang, G. Chen, P. Wang, W.Y. Wang, C.G. He, T. Wang, T. Schulz, M. Albrecht, P. Jin, F.J. Xu, X.L. Yang, Z.X. Qin, W.K. Ge, J.J. Shi and B. Shen, High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure, Advanced Materials, 28(36), 7978 (2016)
5. F. Liu, T. Wang, Z.H. Zhang, T. Shen, X. Rong, B.W. Sheng, L.Y. Yang, D. Li, J.Q. Wei, S.S. Sheng, X.G. Li, K.H. Liu, X.Z. Li, B. Shen and X.Q. Wang, Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration, Advanced Materials, 34(5), 2106814 (2022)
6. D. Li, S.F. Liu, Z.Y. Qian, Q.F. Liu, K. Zhou, D.D. Liu, S.S. Sheng, B.W. Sheng, F. Liu, Z.Y. Chen, P. Wang, T. Wang, X. Rong, W.K. Ge, B. Shen, and X.Q. Wang, Deep-Ultraviolet Micro-LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously, Advanced Materials, 34(19), 2109765 (2022)
7. J.M. Wang, M.X. Wang, F.J. Xu, B.Y. Liu, J. Lang, N. Zhang, X.N. Kang, Z.X. Qin, X.L. Yang, X.Q. Wang, W.K. Ge and B. Shen, Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping, Light-Science & Applications, 11(1), 71 (2022)
8. X.X. Sun, P. Wang, T. Wang, L. Chen, Z.Y. Chen, K. Gao, T. Aoki, M. Li, J. Zhang, T. Schulz, M. Albrecht, W.K. Ge, Y. Arakawa, B. Shen, and X.Q. Wang, Single-photon emission from isolated monolayer islands of InGaN, Light-Science & Applications, 9(1), 159 (2020)
9. P. Wang, Y. Yuan, C. Zhao, X.Q. Wang, X.T. Zheng, X. Rong, T. Wang, B.W. Sheng, Q.X. Wang, Y.Q. Zhang, L.F. Bian, X.L. Yang, F.J. Xu, Z.X. Qin, X.Z. Li, X.X. Zhang* and B. Shen, Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires, Nano Letters, 16(2), 1328 (2016)
10. S. Zhang, N. Tang, W.F. Jin, J.X. Duan, X. He, X. Rong, C.G. He, L.S. Zhang, X.D. Qin, L. Dai, Y.H. Chen, W.K. Ge and B. Shen, Generation of Rashba Spin-Orbit Coupling in CdSe Nanowire by Ionic Liquid Gate, Nano Letters, 15(2), 1152 (2015)
11. C.M. Yin, H.T. Yuan, X.Q. Wang, S.T. Liu, S. Zhang, N. Tang, F.J. Xu, Z.Y. Chen, H. Shimotani, Y. Iwasa, Y.H. Chen, W.K. Ge and B. Shen, Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN, Nano Letters, 13(5), 2024 (2013)
12. F.C. Lu, N. Tang, S.Y. Huang, M. Larsson, I. Maximov, M. Graczyk, J.X. Duan, S.D. Liu, W.K. Ge, F.J. Xu and B.Shen, Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact, Nano Letters, 13(10), 4654 (2013)
13. S.S. Sheng, T. Wang, S.F. Liu, F. Liu, B.W. Sheng, Y. Yuan, D. Li, Z.Y. Chen, R.C. Tao, L. Chen, B.Q. Zhang, J.J. Yang, P. Wang, D. Wang, X.X. Sun, J.M. Zhang, J. Xu, W.K. Ge, B. Shen and X.Q. Wang, Atomic-Scale Investigation of the Lattice-Asymmetry-Driven Anisotropic Sublimation in GaN, Advanced Science, 9(22), 2106028 (2022)
14. X.C. Liu, N. Tang, S.X. Zhang, X.Y. Zhang, H.M. Guan, Y.F. Zhang, X. Qian, Y. Ji, W.K. Ge and B. Shen, Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature, Advanced Science, 7(13), 1903400 (2020)
15. T. Wang, X.Q. Wang, Z.Y. Chen, X.X. Sun, P. Wang, X.T. Zheng, X. Rong, L.Y. Yang, W.W. Guo, D. Wang, X.L. Yang, F.J. Xu, W.K. Ge, X.X. Zhang and B. Shen, High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy, Advanced Science, 5(9), 1800844 (2018)
16. Z.H.Chen, X.L. Yang, X. Liu, J.F. Shen, Z.D. Cai; H.C. Yang, X.Y. Fu, M.J. Wang, N. Tang, F.J. Xu, X.Q. Wang, W.K. Ge, B.Shen, Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates, Advanced Electronic Materials, 9, 2300148 (2023)
17. D.S. Liu, L. Hu, X.L. Yang, Z.H. Zhang, H.D. Yu, F.W. Zheng, Y.X. Feng, J.Q. Wei, Z.D. Cai, Z.H. Chen, C. Ma, F.J. Xu, X.Q. Wang, W.K. Ge, K.H. Liu, B. Huang and B. Shen, Polarization-Driven-Orientation Selective Growth of Single-Crystalline III-Nitride Semiconductors on Arbitrary Substrates, Advanced Functional Materials, 32(14), 2113211 (2022)
18. X.Y. Zhang, N. Tang, L.Y. Yang, C. Fang, C.H. Wan, X.C. Liu, S.X. Zhang, Y.F. Zhang, X.Q. Wang, Y. Lu, W.K. Ge, X.F. Han and B. Shen, Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier, Advanced Functional Materials, 31(15), 2009771 (2021)
19. L.Y. Yang, X.Q. Wang, T. Wang, J.Y. Wang, W.J. Zhang, P. Quach, P. Wang, F. Liu, D. Li, L. Chen, S.F. Liu, J.Q. Wei, X.L. Yang, F.J. Xu, N. Tang, W. Tan, J. Zhang, W.K. Ge, X.S. Wu, C. Zhang and B. Shen, Three Subband Occupation of the Two-Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures, Advanced Functional Materials, 30(46), 2004450 (2020)
20. Y.X. Feng, X.L. Yang, Z.H. Zhang, D. Kong, J. Zhang, K.H. Liu, X.Z. Li, J.F. Shen, F. Liu, T. Wang, P.F. Ji, F.J. Xu, N. Tang, T.J. Yu, X.Q. Wang, D.P. Yu, W.K. Ge and B. Shen, Epitaxy of Single-Crystalline GaN Film on CMOS-Compatible Si(100) Substrate Buffered by Graphene, Advanced Functional Materials, 29(42), 1905056 (2019)
21. P. Wang, X.Q. Wang, T. Wang, C.S. Tan, B.W. Sheng, X.X. Sun, M. Li, X. Rong, X.T. Zheng, Z.Y. Chen, X.L. Yang, F.J. Xu, Z.X. Qin, J. Zhang, X.X. Zhang and B. Shen, Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods, Advanced Functional Materials, 27(9), 1604854 (2017)
22. S.X. Zhang, N. Tang, X.Y. Zhang, X.C. Liu, H.M. Guan, Y.F. Zhang, X. Qian, Y. Ji, W.K. Ge and B. Shen, Excitonic effects on electron spin orientation and relaxation in wurtzite GaN, Physical Review B, 104(12), 125202 (2021)
23. N. Tang, B. Shen, K. Han, F.C. Lu, Z.X. Qin and G.Y. Zhang, Abnormal Shubnikov-de Haas oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures in tilted magnetic fields, Physical Review B, 79(7), 073304 (2009)
24. N. Tang, B. Shen, X.W. He, K. Han, Z.J. Yang, Z.X. Qin, G.Y. Zhang, T. Lin, B. Zhu, W.Z. Zhou, L.Y. Shang and J.H. Chu, Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures, Physical Review B, 76(15), 155303 (2007)
25. N. Tang, B. Shen, M.J. Wang, Z.J. Yang, K. Xu, G.Y. Zhang, D.J. Chen, Y. Xia, Y. Shi, R. Zhang and Y.D. Zheng, Comment on "Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures", Physical Review B, 73(3), 037301 (2006)
26. Z.W. Zheng, B. Shen, R. Zhang, Y.S. Gui, C.P. Jiang, Z.X. Ma, G.Z. Zheng, S.L. Guo, Y. Shi, P. Han, Y.D. Zheng, T. Someya and Y. Arakawa, Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1-xN/GaN heterostructures, Physical Review B, 62(12), R7739 (2000)
27. J.J. Yang, J. Wei, Y.L. Wu, M.Q.Nuo, Z.H. Chen, X.L.Yang, M.J. Wang, B. Shen, 600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects, IEEE Electron Device Letters, 44,225 (2023)
28. Y.L. Wu, J. Wei, M.J. Wang, M.Q. Nuo, J.J. Yang, W. Lin, Z.Y. Zheng, L. Zhang, M.Y. Hua, X.L. Yang, Y.L. Hao, K.J. Chen, B. Shen, An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps, IEEE Electron Device Letters, 44, 25 (2023)
29. W. Lin, M.J. Wang, R.Y. Yin, J. Wei, C.P. Wen, B. Xie, Y.L. Hao and B. Shen, Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes, IEEE Electron Device Letters, 42(8), 1124 (2021)
30. Y. Li, M.J. Wang, R.Y. Yin, J. Zhang, M. Tao, B. Xie, Y.L. Hao, X.L. Yang, C.P. Wen and B. Shen, Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10(10) High On/Off Current Ratio and Low Specific On-Resistance, IEEE Electron Device Letters, 41(3), 329 (2020)
31. J.N. Gao, M.J. Wang, R.Y. Yin, S.F. Liu, C.P. Wen, J.Y. Wang, W.G. Wu, Y.L. Hao, Y.F. Jin and B. Shen, Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage, IEEE Electron Device Letters, 38(10), 1425 (2017)
32. S.X. Lin, M.J. Wang, F. Sang, M. Tao, C.P. Wen, B. Xie, M. Yu, J.Y. Wang, Y.L. Hao, W.G. Wu, J. Xu, K. Cheng and B. Shen, A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices, IEEE Electron Device Letters, 37(4), 377 (2016)
33. S.X. Lin, M.J. Wang, B. Xie, C.P. Wen, M. Yu, J.Y. Wang, Y.L. Hao, W.G. Wu, S. Huang, K.J. Chen and B. Shen, Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment, IEEE Electron Device Letters, 36(8), 757 (2015)
34. M.J. Wang, D.W. Yan, C. Zhang, B. Xie, C.P. Wen, J.Y. Wang, Y.L. Hao, W.G. Wu and B. Shen, Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed I-V Measurement, IEEE Electron Device Letters, 35(11), 1094 (2014)
35. Y. Wang, M.J. Wang, B. Xie, C.P. Wen, J.Y. Wang, Y.L. Hao, W.G. Wu, K.J. Chen and B. Shen, High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique, IEEE Electron Device Letters, 34(11), 1370 (2013)
36. S. Wu, X.L. Yang, Z.X. Wang, Z.W. Ouyang, H.Y. Huang, Q. Zhang, Q.Y. Shang, Z.H. Shen, F.J. Xu, X.Q. Wang, W.K. Ge and B. Shen, Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN, Applied Physics Letters, 120(24), 242101 (2022)
37. Y.X. Feng, H.R. Sun, X.L. Yang, K. Liu, J. Zhang, J.F. Shen, D.S. Liu, Z.D. Cai, F.J. Xu, N. Tang, T.J. Yu, X.Q. Wang, W.K. Ge and B. Shen, High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer, Applied Physics Letters, 118(5), 052104 (2021)
38. S. Wu, X.L. Yang, Q. Zhang, Q.Y. Shang, H.Y. Huang, J.F. Shen, X.G. He, F.J. Xu, X.Q. Wang, W.K. Ge and B. Shen, Direct evidence of hydrogen interaction with carbon: C-H complex in semi-insulating GaN, Applied Physics Letters, 116(26), 262101 (2020)
39. Y.X. Feng, X.L. Yang, J.P. Cheng, J. Zhang, P.F. Ji, J.F. Shen, A.Q. Hu, F.J. Xu, T.J. Yu, X.Q. Wang and B. Shen, Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates, Applied Physics Letters, 110(19), 192104 (2017)
40. A.Q. Hu, X.L. Yang, J.P. Cheng, L. Guo, J. Zhang, W.K. Ge, M.J. Wang, F.J. Xu, N. Tang, Z.X. Qin, X.Q. Wang and B. Shen, Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements, Applied Physics Letters, 108(4), 042107 (2016)
41. J.P. Cheng, X.L. Yang, L. Sang, L. Guo, A.Q. Hu, F.J. Xu, N. Tang, X.Q. Wang and B. Shen, High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology, Applied Physics Letters, 106(14), 142106 (2015)
42. L. Guo, X.L. Yang, Z.H. Feng, Y.J. Lv, J.P. Cheng, L. Sang, F.J. Xu, N. Tang, X.Q. Wang, W.K. Ge and B. Shen, Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field, Applied Physics Letters, 105(24), 242104 (2014)
43. C.M. Yin, B. Shen, Q. Zhang, F.J. Xu, N. Tang, L.B. Cen, X.Q. Wang, Y.H. Chen and J.L. Yu, Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain, Applied Physics Letters, 97(18), 181904 (2010)
44. S. Huang, B. Shen, F. Lin, N. Ma, F.J. Xu, Z.L. Miao, J. Song, L. Lu, F. Liu, Y. Wang, Z.X. Qin, Z.J. Yang and G.Y. Zhang, Ni diffusion and its influence on electrical properties of AlxGa1-xN/GaN heterostructures, Applied Physics Letters, 93(17), 172102 (2008)
45. X.W. He, B. Shen, Y.Q. Tang, N. Tang, C.M. Yin, F.J. Xu, Z.J. Yang, G.Y. Zhang, Y.H. Chen, C.G. Tang and Z.G. Wang, Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures under uniaxial strain, Applied Physics Letters, 91(7), 071912 (2007)
46. N. Tang, B. Shen, M.J. Wang, Z.J. Yang, K. Xu, G.Y. Zhang, T. Lin, B. Zhu, W.Z. Zhou and J.H. Chu, Effective mass of the two-dimensional electron gas and band nonparabolicity in AlxGa1-xN/GaN heterostructures, Applied Physics Letters, 88(17), 172115 (2006)
47. J. Lu, B. Shen, N. Tang, D.J. Chen, H. Zhao, D.W. Liu, R. Zhang, Y. Shi, Y.D. Zheng, Z.J. Qiu, Y.S. Gui, B. Zhu, W. Yao, J.H. Chu, K. Hoshino and Y. Arakawa, Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation, Applied Physics Letters, 85(15), 3125 (2004)
48. Z.W. Zheng, B. Shen, Y.S. Gui, C.P. Jiang, N. Tang, R. Zhang, Y. Shi, Y.D. Zheng, S.L. Guo, G.Z. Zheng, J.H. Chu, T. Someya and Y. Arakawa, Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-xN/GaN heterointerfaces, Applied Physics Letters, 82(12), 1872 (2003)
49. B. Shen, T. Someya, O. Moriwaki and Y. Arakawa, Effect of carrier confinement on photoluminescence from modulation-doped AlxGa1-xN/GaN heterostructures, Applied Physics Letters, 76(6), 679 (2000)
50. B. Shen, T. Someya and Y. Arakawa, Influence of strain relaxation of the AlxGa1-xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures, Applied Physics Letters, 76(19), 2746 (2000)