Publications
A. Aiello, Y. Wu, A. Pandey, P. Wang, W. Lee, D. Bayerl, N. Sanders, Z. Deng, J. Gim, K. Sun, R. Hovden, E. Kioupakis, Z. Mi, and P. Bhattacharya,* Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures, Nano Letters 2019, 19, 7852-7858. DOI: 10.1021/acs.nanolett.9b02847
Y. Sun, W. Shin, D. A. Laleyan, P. Wang, A. Pandy, X. Liu, Y. Wu, M. Soltani, and Z. Mi,* Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform, Optics Letters 2019, 44, 5679-5682. DOI: 10.1364/OL.44.005679
X. Fang, F. Zheng, O. Drachenko, S. Zhou, X. Zheng, Z. Chen, P. Wang, W. Ge, B. Shen, J. Feng, and X. Wang,* Determination of electron effective mass in InN by cyclotron resonance spectroscopy, Superlattices and Microstructures 2019, 136, 1-6. DOI: 10.1016/j.spmi.2019.106318
L. Yang, J. Wang, T. Wang, M. Wu, P. Wang, D. Wang, X. Yang, F. Xu, W. Ge, X. Wu, X. Wang*, and B. Shen, Planar anisotropic Shubnikov-de-Haas oscillations of two-dimensional electron gas in AlN/GaN heterostructure, Applied Physics Letters 2019, 115, 152107. DOI: 10.1063/1.5116747
P. Wang, T. Wang, H. Wang, X. Sun, P. Huang, B. Sheng, X. Rong, X. Zheng, Z. Chen, Y. Wang, D. Wang, H. Liu, F. Liu, L. Yang, D. Li, L. Chen, X. Yang, F. Xu, Z. Qin, J. Shi, T. Yu, W. Ge, B. Shen, and X. Wang,* Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN, Advanced Functional Materials 2019, 29, 1902608. DOI: 10.1002/adfm.201902608
X. Sun, P. Wang, T. Wang, D. Li, Z. Chen, L. Chen, K. Gao, M. Li, J. Zhang, W. Ge, Y. Arakawa, B. Shen, M. Holmes, and X. Wang,* Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure, Applied Physics Letters 2019, 115, 022101. DOI: 10.1063/1.5100323
X. Sun, P. Wang, B. Sheng, T. Wang, Z. Chen, K. Gao, M. Li, J. Zhang, W. Ge, Y. Arakawa, B. Shen, M. Holmes,* and X. Wang,* Single-photon emission from a further confined InGaN/GaN quantum disc via reverse-reaction growth, Quantum Engineering 2019, 2, e20. DOI: 10.1002/que2.2
B. Sheng, F. Bertram, X. Zheng, P. Wang, G. Schmidt, P. Veit, J. Bläsing, Z. Chen, A. Strittmatte, J. Christen, B. Shen, and X. Wang,* Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film, Japanese Journal of Applied Physics 2019, 58, 065503. DOI: 10.7567/1347-4065/ab1a5b
Y. Wang, X. Rong, S. Ivanov, V. Jmerik, Z. Chen, H. Wang, T. Wang, P. Wang, P. Jin, Y. Chen, V. Kozlovsky, D. Sviridov, M. Zverev, E. Zhdanova, N. Gamov, V. Studenov, H. Miyake, H. Li, S. Guo, X. Yang, F. Xu, T. Yu, Z. Qin, W. Ge, B. Shen, and X. Wang,* Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt, Advanced Optical Materials 2019, 7, 1801763. DOI: 10.1002/adom.201801763
D. Wang, Z. Y. Chen, T. Wang, L. Y. Yang, B. W. Sheng, H. P. Liu, J. Su, P. Wang, X. Rong, J. Y. Cheng, X. Y. Shi, W. Tan, S. P. Guo, J. Zhang, W. K. Ge, B. Shen, and X. Q. Wang,* Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire, Applied Physics Letters 2019, 114, 073503. DOI: 10.1063/1.5080470
J. Q. Wei, K. Kim, F. Liu, P. Wang, X. T. Zheng, Z. Y. Chen, D. Wang, A. Imran, X. Rong, X. L. Yang, F. J. Xu, J. Yang, B. Shen, and X. Q. Wang,* β-Ga2O3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy, Journal of Semiconductors 2019, 40, 012802. DOI: 10.1088/1674-4926/40/1/012802
Patents