王新强, 卢励吾，黄呈橙，许福军，沈波, 杨彦楠, Zhixin Qin, Bo Shen, Guoyi Zhang, Xinqiang Wang, Chenguang He and Shunfei Fan.InAlN表面态性质研究.物理学报,2013,10.7498/aps.62.177302 Xinqiang Wang, Weikun Ge, Yonghai Chen, Yoshihiro Iwasa, Hidekazu Shimotani, Zhuoyu Chen, Fujun Xu, Ning Tang, Shan Zhang, Shitao Liu, Hongtao Yuan, Chunming Yin, Shou-Cheng Zhang, Yong Xu, Gang Xu, Bo Shen, Xianfa Fang, Haijun Zhang, Yi Cui, Harold Y. Hwang, Biao Lian, Xinqiang Wang and Hongtao Yuan.Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN.Nano Letters,2013,10.1021/nl400153p Y. ISHITANI, A. YOSHIKAW, K. KUSAKABE, X.Q. WANG, M. FUJIWARA, D. IMAI, L. Kończewicz, T. Suski, D. Y. Ma, X. T. Zheng, X. Q. Wang, M. Baj2 and L. H. Dmowski.Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy.Journal of Electronic Materials,2013,10.1007/s11664-013-2550-y Ching-Ting Leea, Xin-Qiang Wang, Ying-Shuo Chiua, Ching-Ting Leea, B. Shen, X. Q. Wang, W. K. Ge, A. Yoshikawa, N. Tang, F. J. Xu, B. S. Zhang, H. Hashimoto, X. Rong, K. Fu and G. Chen.Performance enhancement mechanisms of passivated InN/GaN-heterostructured ion-selective field-effect-transistor pH sensors.Sensors and Actuators B: Chemical,2013,10.1016/j.snb.2013.02.080 Masatomo Sumiya, Keisuke Kobayashi, Kazuaki Sakoda, Bo Shen, Sang Liwen, Hideki Yoshikawa, Shitao Liu, Shigenori Ueda, Mickael Lozac’h, Bo Shen, Weikun Ge, Ning Tang, Xuelin Yang, Xinqiang Wang, Fujun Xu, Junxi Duan, Li Gao and Xin He.Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy.Science and Technology of Advanced Materials,2013,10.1088/1468-6996/14/1/015007 Bo Shen, Xinqiang Wang, Weikun Ge, Liwu Lu, Ning Tang, Fujun Xu, Xuelin Yang, Guang Chen, Xiantong Zheng, Li Feng, Lei Guo, B. Shen, X. Q. Wang, T. Suski, L. H. Dmowski, W. K. Ge, L. W. Lu, N. Tang, F. J. Xu, X. L. Yang, X. T. Zheng and L. Guo.Temperature sensitive photoconductivity observed in InN layers.Applied Physics Letters,2013,10.1063/1.4793190 Xinqiang Wang, and Bo Shen, Weikun Ge, Ning Tang, Dingyu Ma, Guang Chen, Xiantong Zheng, Bo Shen, Weikun Ge, Ning Tang, Xuelin Yang, Xinqiang Wang, Fujun Xu, Fangchao Lu, Yuewei Zhang, Junxi Duan, Li Gao and Xin He.Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films.Applied Physics Express,2013,10.7567/APEX.6.021001 M. Schubert, A. Yoshikawa, X. Wang, N. Ben Sedrine, V. Darakchieva, T. Hofmann, S. Schöche, Bo Shen, Weikun Ge, Ning Tang, Bo Shen, Weikun Ge, Xuelin Yang, Xinqiang Wang, Fujun Xu, Fangchao Lu, Hu Meng, Fuhong Mei, Junxi Duan, Li Gao and Xin He.Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN.Journal of Applied Physics,2013,10.1063/1.4772625