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吴孝松
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吴孝松
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论文成果
Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC
发布时间:2020-02-13点击次数:
影响因子:
0.0
发表刊物:
Appl. Phys. Lett.
卷号:
106
期号:
013106
是否译文:
否