杨学林
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Shan Wu, Xuelin Yang, Bo Shen and Haishan Zhang, Lin Shi, Qing Zhang, Qiuyu Shang, Zeming Qi, Yue Xu, Jie Zhang, Ning Tang, Xinqiang Wang, Weikun Ge, Ke Xu.Unambiguous Identification of Carbon Location on N-Site in Semi-insulating GaN.Phys. Rev. Lett.,121,145505,2018
Yuxia Feng, Xuelin Yang, Kaihui Liu, Bo Shen and Zhihong Zhang, Duan Kang, Jie Zhang, Xinzheng Li, Jianfei Shen, Fang Liu, Tao Wang, Panfeng Ji, Fujun Xu, Ning Tang,Tongjun Yu, Xinqiang Wang, Dapeng Yu, Weikun Ge.Epitaxy of Single-Crystalline GaN Film on CMOS-Compatible Si(100) Substrate Buffered by Graphene.Adv. Funct. Mater.,29,1905056,2019
Jie Zhang, Xuelin Yang, Bo Shen and J. P. Cheng, Y. X. Feng, P. F. Ji, A. Q. Hu, F. J. Xu, N. Tang, X. Q. Wang.Enhanced transport properties in InAlGaN/AlN/GaN heterostructures on Si (111) substrates: The role of interface quality.Appl. Phys. Lett.,110,172101,2017
Jianpeng Cheng, J. Zhang, A. Q. Hu, P. F. Ji, Y. X. Feng, L. Guo, C. G. He, L. S. Zhang, F. J. Xu, N. Tang, X. Q. Wang and Xuelin Yang, Bo Shen.Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor.ACS Appl. Mat. Interfaces,8,34108,2016
Jianpeng Cheng, Xuelin Yang, Bo Shen and L. Sang, L. Guo, A. Q. Hu, F. J. Xu, N. Tang, X. Q. Wang.High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice mismatch induced stress control technology.Appl. Phys. Lett.,106,142106,2015
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