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研究领域
宽禁带半导体材料及物性
宽禁带半导体光电器件
论文成果
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An extended Stoney's formula including nonlinear deformation for large size wafer of multilayers with arbitrary thicknesses,
Scripta Materialia
2020,
186,
29-32.
Critical thickness of GaN film in controllable stress-induced self separation for preparing native GaN substrates,
Materials and Design
2019,
180,
107985-.
Anisotropic dependence of light extraction behavior on propagation path in AlGaN-based deep-ultraviolet light-emitting diodes,
Optics Express
2019,
27,
A436-A444.
Coordinated stress management and dislocation control in GaN growth on Si (111) substrates by using a carbon nanotube mask,
Nanoscale
2019,
11,
4489-4495.
Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask,
ACS Appl. Mater. Interface
2016,
8,
18208.
Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,
OPTICS EXPRESS
2016,
24,
A935.
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