发表刊物：Journal of Semiconductors 卷号：40 合写作者：Yan Gao, Liyun Zhao, Qiuyu Shang, Chun Li, Zhen Liu, Qi Li, Xina Wang, Qing Zhang*
上一条：Charge Transfer Induced Photoluminescence Properties of WSe2 Monolayer-Bilayer Homojunction
下一条：Analysis of photoluminescence behavior of high-quality single-layer MoS2
发表刊物：Journal of Semiconductors
卷号：40
合写作者：Yan Gao, Liyun Zhao, Qiuyu Shang, Chun Li, Zhen Liu, Qi Li, Xina Wang, Qing Zhang*
