胡晓东

Gender:Male

Alma Mater:电子科技大学

Education Level:Postgraduate (Doctoral)

[MORE] Honors and Titles:

2012-01-01 北京大学优秀教学奖

2006-01-01 北京大学正大教师奖

1996-01-01 北京大学青年教师奖

1994-01-01 清华大学青年教师奖

Paper Publications

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Intersubband transitions in Al0.82In0.18N/GaN single quantum well

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Journal:Chin. Phys. B, Vol.20, No. 9 (2011) 094207

Note:Wang Yu-Zhou, Li Ding, Li Lei, Liu Ningyang, Liu Lei, Cao Wen-Yu, Chen Wei-Hua, and Xiaodong Hu*

Translation or Not:no

Pre One:Influence of Indium Composition in the Prestrained InGaN Interlayer on the Strain Relaxation of InGaN/GaN Multiple Quantum Wells in Laser Diode Structures

Next One:Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer

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