胡晓东

Gender:Male

Alma Mater:电子科技大学

Education Level:Postgraduate (Doctoral)

[MORE] Honors and Titles:

2012-01-01 北京大学优秀教学奖

2006-01-01 北京大学正大教师奖

1996-01-01 北京大学青年教师奖

1994-01-01 清华大学青年教师奖

Paper Publications

Current position: Home > Scientific Research > Paper Publications

Influence of Indium Composition in the Prestrained InGaN Interlayer on the Strain Relaxation of InGaN/GaN Multiple Quantum Wells in Laser Diode Structures

Release time:2020-02-14 Hits:

Impact Factor:0.0

Journal:Journal of Applied Physics

Note:Lei Liu, Lei Wang, Ding Li, Ningyang Liu, Weihua Chen, ZheChuan Feng, Weimin Du and Xiaodong Hu*,

Issue:109

Page Number:073106 (2011)

Translation or Not:no

Pre One:Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes

Next One:Intersubband transitions in Al0.82In0.18N/GaN single quantum well

Click:

The Last Update Time:..

Peking University Official Website Pkunews 中文