Impact Factor:2.286
DOI number:10.1063/1.4772625
Journal:Journal of Applied Physics
Indexed by:Journal
Document Type:J
Translation or Not:no
First Author:S. Schöche,Xin He
Correspondence Author:M. Schubert, Bo Shen, Weikun Ge,Ning Tang
All the Authors: A. Yoshikawa, X. Wang, N. Ben Sedrine, V. Darakchieva,T. Hofmann, Bo Shen, Weikun Ge, Xuelin Yang, Xinqiang Wang,Fujun Xu, Fangchao Lu, Hu Meng, Fuhong Mei, Junxi Duan,Li Gao
Date of Publication:2013-01-02
王新强
+
Gender: Male
Alma Mater: 吉林大学
Paper Publications
Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN
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