史俊杰
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史俊杰
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论文成果
Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect
发布时间：2020-06-08点击次数：
影响因子：
0.0
DOI码：
10.1039/c8nr03172j
发表刊物：
Nanoscale
摘要：
Recently, two-dimensional (2D) few-layer InSe nanosheets have become one of the most interesting materials due to their excellent electron transport, wide bandgap tunability and good metal contact. However, their low photoluminescence (PL) efficiency and hole mobility seriously restrict their application in 2D InSe-based nano-devices. Here, by exerting a suitable compressive strain, a remarkable modification for the electronic structure and the optical and transport properties of 1- to 5-layer InSe has been confirmed by powerful GW-BSE calculations. Both top valence band inversion and indirect-to-direct bandgap transition are induced; the light polarization is reversed from E||c to E⊥c; and the PL intensity and hole mobility are enhanced greatly. Surprisingly, under 6% compressive strain, the light emission of monolayer InSe with E⊥c is allowed at 2.58 eV, which has never been observed previously. Meanwhile, for the 2D few-layer InSe, the PL with E⊥c polarization increases over 10 times in intensity and has a blue-shift at about 0.6–0.7 eV, and the hole mobility increases two orders of magnitude up to 103 cm2 V−1 s−1, as high as electron mobility. The strained few-layer InSe are thus a promising candidate for future 2D electronic and optoelectronic nano-devices.
论文类型：
期刊论文
学科门类：
理学
一级学科：
物理学
卷号：
10
页面范围：
11441-11451
是否译文：
否
发表时间：
2018-05-16
收录刊物：
SCI
附件：