史俊杰
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史俊杰
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论文成果
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
发布时间：2020-06-08点击次数：
影响因子：
0.0
DOI码：
10.1038/srep21786
发表刊物：
Sci. Rep.
摘要：
Although many devices based on MoS2 have been fabricated, where MoS2-metal contact plays a critical role, the nature of MoS2-metal contact has not been well established yet. We provide the first comparative study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au) with inclusion of many-electron effects based on a dual interface model. A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly depressed and become ineligible when channel MoS2 is doped by electrodes. Ohmic contact is revealed for both ML and BL MoS2-Sc contacts, and Schottky barrier prevails in other contacts, with the SBH decreased by the interlayer coupling. The dual interface model with suppression of the many-electron effects can be expanded to a general device with metal-semiconductor interface.
论文类型：
期刊论文
学科门类：
理学
一级学科：
物理学
卷号：
6
页面范围：
21786
是否译文：
否
发表时间：
2016-03-01
收录刊物：
SCI
附件：