史俊杰
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史俊杰
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论文成果
Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect
发布时间：2020-06-08点击次数：
影响因子：
0.0
DOI码：
10.1021/acsnano.5b04158
发表刊物：
ACS Nano
关键字：
GaN nanowire, surface microwire, exciton, defect, first-principles calculations
摘要：
The physical origin of the strong emission line at 3.45 eV and broadening yellow luminescence (YL) band centered at 2.2 eV in GaN nanowire (NW) has been debated for many years. Here, we solve these two notable issues by using state-of-the-art first-principles calculations based on many-body perturbation theory combined with polarization-resolved experiments. We demonstrate that the ubiquitous surface “microwires” with amazing characteristics, i.e., the outgrowth nanocrystal along the NW side wall, are vital and offer a new perspective to provide insight into some puzzles in epitaxy materials. Furthermore, inversion of the top valence bands, in the decreasing order of crystal-field split-off hole (CH) and heavy/light hole, results in the optical transition polarized along the NW axis due to quantum confinement. The optical emission from bound excitons localized around the surface microwire to CH band is responsible for the 3.45 eV line with E∥c polarization. Both gallium vacancy and carbon-related defects tend to assemble at the NW surface layer, determining the broadening YL band.
论文类型：
期刊论文
学科门类：
理学
一级学科：
物理学
卷号：
9
页面范围：
9276-9283
是否译文：
否
发表时间：
2015-08-24
附件：
上一条：Breakthrough of the p-type doping bottleneck in ZnO by inserting ultrathin ZnX (X=S, Se and Te) layer doped with NX or AgZn
下一条：Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m/(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation