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Personal Information:

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Degree:Doctoral degree
Status:Employed
School/Department:量子材料科学中心

孙栋

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Gender: Male

Education Level: Postgraduate (Doctoral)

Administrative Position: 长聘副教授

Alma Mater: University of Michigan

Research Field

Current position: Home / Scientific Research / Research Field

Our recent research interest includes (but not limited to)

  • Ultrafast Spectroscopy

Ultrafast spectroscopy has been a powerful technique for investigating the electronic and vibration properties with up to sub 100 fs time resolution. It can potentially further the understanding regarding hot carrier dynamics, photo emission, coherent effects, dephasing phenomena, many body effects, nonequilibrium distribution function, resonant and non resonant tunneling and dynamics of coherent phonons in materials of different states and different dimensionalities. On the other hand, with the state of art nanofabrication techniques, 10s of nm resolution nano structure such as quantum confinement, super lattice, periodic potential wells et al. can be fabricated on the sample which provides additional freedom for spectroscopy studies. We are working on both making smart nano structures and characterization of those devices to study device physics mainly to assitant the optoelectronics development on novel materials, for example, graphene.

  • CVD Growth of Graphene and Graphene Optoeletronics

Recently, graphene has received considerable attention, with early samples exhibiting remarkable physical, chemical and electronic properties and great promise for terahertz (THz) nanoelectronic and optoelectronic devices. CVD growth of graphene own the advantages of compatible with current CMOS technology and transferrable to any substrate over other graphene grwoth methods such as mechanical exfoliation and epitaxial desorption of Si from SiC. This makes it very promising for future graphene based device and graphene transparent electrode. Our group dedicates to the high quatlity graphene growth with chemical vapor deposition,device fabrication and spectroscopy charactertization.

  • High Power THz and THz technology

Terahertz(THz) radiation, lies in the frequency gap between the infrared and microwaves,typicaly referred to as the frequencies from 100GHz to 30THz. Recent technological innocation in photonics and nanotechnology is now enabling THz research to be applied in many more sectors.It is finding use in information and communications technology;ultrafast computing; non-destructive evaluation;homeland security;quality control; biology and medical sciences et al. Our group dedicates on building table top high power THz source and use it in THz spectroscopy study of novel materials.

 

Here is a diagram of relations between  our recent research:

On the other hand, we have active collabrations with  groups in ICQM and all around world on some other intersting projects,click here for more details.

 

Major Faucilities

To be updated.....