Xuelin Yang, and Bo Shen, Xinqiang Wang, Tongjun Yu, Fujun Xu, Anqi Hu, Jianfei Shen, Panfeng Ji, Jie Zhang, Jianpeng Cheng and Yuxia Feng.Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates.Applied Physics Letters,2017,10.1063/1.4983386 Bo Shen, Xuelin Yang, Xinqiang Wang, Ning Tang, Fujun Xu, Anqi Hu, Panfeng Ji, Yuxia Feng, Jianpeng Cheng and Jie Zhang.Enhanced transport properties in InAlGaN/AlN/GaN heterostructures on Si (111) substrates: The role of interface quality.Applied Physics Letters,2017,10.1063/1.4982597 Xin Rong, Dingyu Ma, Bo Shen & XinqiangWang, WeikunGe, ZhixinQin, FujunXu, XuelinYang, JianZhang, Mo Li, Peng Jin, JürgenChristen, Frank Bertram, OlgaAugust, Mathias Müller, Sebastian Metzner, MartinAlbrecht, Tobias Schulz, PingWang, WeiyingWang, XiantongZheng and Dingyu Ma.Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy.Scientific Reports,2017,10.1038/srep46420 Bo Shen, Xuelin Yang, Xinqiang Wang, Weikun Ge, Ning Tang, Panfeng Ji, Yuxia Feng, Jie Zhang, Lei Guo, Jianpeng Cheng and Anqi Hu.Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates.Superlattices and Microstructures,2017,10.1016/j.spmi.2017.03.058 Bo Shen, Fujun Xu, Bo Shen, Xinqiang Wang, Zhixin Qin, Boyu Dong, Tao Wang, Nan Xie, Yuanhao Sun, Mingxing Wang, Fujun Xu, Lisheng Zhang and Lisheng Zhang.High-quality AlN epitaxy on sapphire substrates with sputtered buffer layers.Superlattices and Microstructures,2017,10.1016/j.spmi.2017.03.013 Zhixin Qin, Bo Shen, Zheyu Fang , Tongjun Yu, Xinqiang Wang, Fujun Xu, Mingxing Wang, Tianyang Han, Lisheng Zhang and Mengjun Hou.Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells.Superlattices and Microstructures,2017,10.1016/j.spmi.2017.02.051 Bo Shen, FujunXu, ZhixinQin, XinqiangWang, Lin Lu, LishengZhang, Chenguang He and JiamingWang.High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition.Scientific Reports,2017,10.1038/srep42747 Lin Lu, QiGong Chen, Ming Jiang, Bo Shen, Chen Lv, XinQiang Wang, FuJun Xu, Zhi Wan and Lin Lu.Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells.Superlattices and Microstructures,2017,10.1016/j.spmi.2017.02.035 Bo Shen, Bo Shen, Xinqiang Wang, Yaobo Pan, Chun Tao, Jun Tang, Jianfei Shen, Shan Wu, Chunyan Song, Anqi Hu, Jie Zhang, Jianpeng Cheng, Yuxia Feng, Xuelin Yang, Panfeng Ji and Panfeng Ji.High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process.Superlattices and Microstructures,2017,10.1016/j.spmi.2017.02.019 Xinqiang Wang, AND BO SHEN, WEIKUN GE, ZHIXIN QIN, XUELIN YANG, FUJUN XU, XIN RONG, FANG LIU, JIAN ZHANG, JUAN SU, MO LI, BOWEN SHENG, PING WANG and XIAOXIAO SUN.Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires.Optical Materials Express,2017,10.1364/OME.7.000904