王新强中文主页--科研成果

＊＊ X.Q. Wang, S.T. Liu, D. Ma, X. Zheng, G. Chen, F.J. Xu, N. Tang, B. Shen, P. Zhang, X.Z. Cao, B.Y. Wang, S. Huang, K.J. Chen, S.Q. Zhou and A. Yoshikawa, “Fe-doped InN layers grown by molecular beam epitaxy”---- Applied Physics Letters 101, 171905 (2012).

＊＊ X.Q. Wang, S.T Liu, N. Ma. L, Feng, G. Chen, F. Xu, N. Tang, S. Huang, K. Chen, S. Zhou and B. Shen, “High electron mobility InN layers grown by boundary-temperature-controlled epitaxy” ----Applied physics Express 5, 015502 (2012).

＊＊ N. Ma, B. Shen, L.W. Lu, F.J. Xu, L. Guo, X.Q. Wang, F. Lin, Z.H. Feng, S.B. Dun, and B. Liu, “Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN” ----Applied Physics Letters 100, 052109 (2012).

＊＊ F.H. Mei, N. Tang*, X. Q. Wang*, J. X. Duan, S. Zhang, Y. H. Chen, W. K. Ge, and B. Shen*, "Detection of spin-orbit coupling of surface electron layer via reciprocal spin Hall effect in InN films" ----Applied Physics Letters 101, 132404, (2012).

＊＊ Jiaming Wang, Fujun Xu, Chengcheng Huang, Zhengyu Xu, Xia Zhang, Yan Wang, Weikun Ge, Xinqiang Wang, Zhijian Yang, Bo Shen, Wei Li, Weiying Wang and Peng Jin, “Indium compositional homogeneity in In0.17Al0.83N epilayers grown by metal organic vapor deposition” ----Applied physics Express, 5, 101002,( 2012).

＊＊ A. Uedono, S. Ishibashi, T. Watanabe1, X. Q. Wang, S. T. Liu, G. Chen, L. W. Sang, M. Sumiya, and B. Shen, “Vacancy-type defects in InxGa1-xN alloys probed using a monoenergetic positron beam” ----J. Appl. Phys. 112, 014507,( 2012).

＊＊ L.H. Dmowski, M. Baj, L. Konczewicz, T. Suski1, D. K. Maude, S. Grzanka1, X. Q. Wang, and A. Yoshikawa, “Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities” ----J. Appl. Phys. 111, 093719, ( 2012).

＊＊ Daichi Imai, Yoshihiro Ishitani, Masay uki Fujiwa ra1, Xinqiang Wang, Kazuhi de Kusaka be,and Akih iko Yos hikawa, "carrier recombination processes in In-polar and N-polar p-type InN films" ----Phys. State Solidi B, 249, 472, ( 2012).

＊＊ F.F. Cheng, T. Fa, X.Q. Wang, S.D.Yao, Dislocation and elastic strain in an InN film characterized by synchrotron radiation x-ray diffraction and rutherform backscattering/channeling ----Chin. Phys. Lett. 29, 026101, ( 2012).

＊＊ C.C. Huang, F.J. Xu, J. Song, Z.Y. Xu, J.M. Wang, R. Zhu, G. Chen, X.Q. Wang, Z.J. Yang, B. Shen, X.S. Chen, and W. Lu, "Different strain relief behaviors in AlGaN/GaN multiple quantum wells on GaN/sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers" ----Journal of Applied Physics 111, 016105 (2012).

2011

＊＊ S.T. Liu, X.Q. Wang, G. Chen, Y.W. Zhang, L. Feng, C.C. Huang, F.J. Xu, N. Tang, L.W. Sang, M. Sumiya, and B. Shen, "Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing"---- Journal of Applied Physics 110, 113514 (2011).

＊＊ N. Ma, X.Q. Wang, S.T. Liu, L. Feng, G. Chen, F.J. Xu, N. Tang and B. Shen, “Deep donor state in InN:Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements”---- Applied Physics Letters 99, 182107 (2011).

＊＊ N. Ma, X.Q. Wang, S.T. Liu, G. Chen, J.H. Pan, L. Feng, F.J. Xu, N. Tang and B. Shen, “Hole mobility in wurtzite InN”, Applied Physics Letters 98, 192114 (2011).

＊＊ D. Imani, Y. Ishitani, M. Fujiwara, K. Kusakabe, X. Wang, A. Yoshikawa, "Carrier recombination processes in Mg-doped N-polar InN films" ----Applied Physics Letters 98, 181908 (2011).

＊＊ Q. Guo, H. Senda, K. Saito, T. Tanaka, M. Nishio, J. Ding, T. Fan, D. Zhang, X.Q. Wang, S.T. Liu, B. Shen, and R. Ohtani, "Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy" ----Applied Physics Letters 98, 181901 (2011).

＊＊ J. Serrano, A. Bosak, M. Krisch, F.J. Manjon, A.H. Romero, N. Garro, X. Wang, A. Yoshikawa, and M. Kuball, "InN thik film lattice dynamics by grazing incidence inelastic X-ray scattering" ----Physic Review Letters 106, 205501 (2011).

＊＊ T.A. Komissarova, V.N. Jmerik, S. Ivannov, O. Drachenko, X. Wang, A. Yoshikawa, "Identification of the main contributions to the conductivity of epitaxial InN" ----Physical Review B 84, 035205 (2011).

＊＊ X.Y. Peng, Q. Zhang, B. Shen, J.R. Shi, C.M. Yin, X.W. He, F.J. Xu, X.Q. Wang, N. Tang, C.Y. Jiang, Y.H. Chen, K. Chang "Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas" ----Physical Review B 84, 075341 (2011).

＊＊ M. Fujiwara, Y. Ishitani, X. Q. Wang, K. Kusakabe, and A. Yoshikawa, "Dependence of Mg acceptor levels in InN on doping density and temperature" ----Journal of Applied Physics, 110, 093505 (2011).

＊＊ J.H. Pan, X.Q. Wang, G. Chen, S.T. Liu, L. Feng, F.J. Xu, N. Tang and B. Shen, "Epitaxy of an Al-droplet-free AlN layer with step-flow features by molecular beam epitaxy" ----Chinese Physics Letters, 28, 068102 (2011).

＊＊ C.M. Yin, N. Tang, S. Zhang, J.X. Duan, F.J. Xu, J. Song, F.H. Mei, X.Q. Wang, B. Shen, Y.H. Chen, J.L. Yu, and H. Ma, "Observation of the photoinduced anomalous Hall effect in GaN based heterostructures" ----Applied Physics Letters 98, 122104 (2011).

＊＊ C.C. Huang, F.J. Xu, X.D. Yan, J. Song, Z.Y. Xu, L.B. Cen, Y. Wang, J.H. Pan, X.Q. Wang, Z.J. Yang, B. Shen, B.S. Zhang, X.S. Chen, and W. Lu, "Intersubband transitions at atmospheric window in AlxGa1−xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer" ----Applied Physics Letters 98, 132105 (2011).

＊＊ Z.L. Miao, N. Tang, F.J. Xu, L.B. Ceng, K. Han, J. Song, C.C. Huang, T.J. Yu, Z.J. Yang, X.Q. Wang, G.Y. Zhang, B. Shen, K.Wei, J. Huang, and X.Y. Liu, "Magnetotransport properties of lattice-matched InAlN/AlN/GaN heterostructures" ----Journal of Applied Physics, 109, 016102 (2011).

＊＊ H.Y. Wang, G.Z. Zhao and X.Q. Wang, "Terahertz radiations from narrow band gap of semiconductor irradiated by femtosecond pulses with different pump intensities" ----Acta Phys. Sin. 60, 043202 (2011).

2010

＊＊ X. Q. Wang, G. Z. Zhao, Q. Zhang, Y. Ishitani, A. Yoshikawa, and B. Shen, "Effect of Mg-doping on enhancement of terahertz emission from InN with different lattice polarities"----Applied Physics Letters 96,061907 (2010).

＊＊ X.Q. Wang, H.P. Sun, and X.Q. Pan,"Effect of GaN interlayer on polarity control of epitaxial ZnO thin films grown by molecular beam epitaxy", ----Applied Physics Letters 97, 151908 (2010).

＊＊ N. Ma, X. Q. Wang, F. J. Xu, N. Tang, B. Shen1, Y. Ishitani, and A. Yoshikawa "Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction"----Applied Physics Letters 97,222114 (2010).

＊＊ J. Song, F.J. Xu, C.C. Huang, F. Lin, X.Q. Wang, Z.J. Yang and B. Shen, K. Wei, and X. Y. Liu, "High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures" ----Applied Physics Letters 97, 232106 (2010).

＊＊ Q. Zhang, X. Q. Wang*,C. M. Yin, F. J. Xu, N. Tang, B. Shen*, Y. H. Chen, K. Chang, W.K. Ge, Y. Ishitani, and A. Yoshikawa, "Strong circular photogalvanic effect in ZnO epitaxial films" ----Applied Physics Letters 97,041907 (2010).

＊＊ T.V.Shubina, A.V. Andrianov, A.O. Zakharin, V.N. Jmerik, I.P. Soshnikov, T.A. Komissarova, A.A. Usikova, P.S. Kopev, S.V. Ivanov, V.A. Shalygin, A.N. Sofronov, D.A. Firsov, L.E. Vorobev, N.A. Gippius, J. Leymarie, X. Wang, and A. Yoshikawa, "Terahertz electro.uminescence of surface plasmons from nanostructured InN layers" ----Applied Physics Letters 96,183106 (2010).

＊＊ T.A. Komissarova, M.A. Shakhov, v. N. Jmerik, R.V. Parfeniev, P. Paturi, X. Wang, A. Yoshikawa, and S.V. Ivanov, "Large magnetoresistance effect in InN epilayers" ----Physics Review B 82,245204 (2010).

＊＊ J. Song, F.J Xu, X.D. Yan, F. Lin, C.C. Huang, L.P. You, T.J. Yu, X.Q. Wang, B. Shen, K. Wei, and X. Y. Liu, "High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InAlN/GaN heterostructure" ----Applied Physics Letters 97,232106 (2010).

＊＊ C.M. Yin, B. Shen, Q. Zhang, F.J. Xu, N. Tang, L. Ceng, X. Wang, Y. Chen, J. Yu, "Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain" ----Applied Physics Letters 97,181904 (2010).

＊＊ Z. L. Miao, T. J. Yu, F. J. Xu, J. Song, C. C. Huang, X. Q. Wang, Z. J. Yang, G. Y. Zhang, X. P. Zhang, D. P. Yu, and B. Shen, "Strain effects on InAlN crystalline quality grown on GaN templates by metalorganic chemical vaport deposition" ----Journal of Applied Physics 107,043515 (2010).

＊＊ J. Song, F.J Xu, Z.L. Miao, S. Huang, Y. Wang, X.Q. Wang, B. Shen, X.B. Qin, B.Y Yang, X.Q. Shen, H. Okumura "The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition" ----J. Phys. D:Appl. Phys. 43, 145402, (2010)

＊＊ A. Yoshikawa, X.Q. Wang, Y. Ishitani, and A. Uedono "Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy" ----Phys. Status Solidi A 207, 5, 1011-1023 (2010)

＊＊ Z.L. Weber, M.E. Hawkridge, X. Wang, and A. Yoshikawa, "Structural differences in Mg-doped InN-indication of polytypism" Phys. Status Solidi C 7, 7, 2025-2028 (2010).

2009

＊＊ Q. Zhang, X. Q. Wang*, X. W. He, C. M. Yin, F. J. Xu, B. Shen*,Y. H. Chen, Z. G. Wang, Y. Ishitani, and A. Yoshikawa, "Lattice polarity detection of InN by circular photogalvanic effect" ----Applied Physics Letters 95,031902 (2009).

＊＊ L. W. Sang, H. Fang, Z. X. Qin, X. Q. Wang, B. Shen, Z. J. Yang, G. Y. Zhang, X. P. Zhang, L. P. You, and D. P. Yu, "Transmission electron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown on AlN/sapphire template" ----Applied Physics Letters 95, 112106 (2009).

＊＊ Z. L. Miao, T. J. Yu, F. J. Xu, J. Song, C. C. Huang, X. Q. Wang, Z. J. Yang, G. Y. Zhang, X. P. Zhang, D. P. Yu, and B. Shen, "The origin and evolution of V-defects in InxAl1−xN epilayers grown by metalorganic chemical vapor deposition" ----Applied Physics Letters 95,231909 (2009).

＊＊ T. A. Komissarova, M. A. Shakhov, V. N. Jmerik, T. V. Shubina, R. V. Parfeniev, S. V. Ivanov, X. Wang, and A. Yoshikawa, "Abnormal magnetic-field dependence of Hall coefficient in InN epilayers" ----Applied Physics Letters 95,012107 (2009).

＊＊ J. Song, F. J. Xu, Z. L. Miao, Y. Wang, X. Q. Wang, and B. Shen "Influence of ultrathin AlN interlayer on the microstructure and the electrical transport properties of AlxGa1−xN/GaN heterostructures" ----Journal of Applied Physics 106, 083711 (2009).

＊＊ A. Uedono, H. Nakamori, K. Narita, J. Suzuki, X. Wang, S.-B. Che, Y. Ishitani,A. Yoshikawa, and S. Ishibashi, "Vacancy-type defects in Mg-doped InN probed by means of positron annihilation" ----Journal of Applied Physics 105, 054507 (2009).

＊＊ L. H. Dmowski, M. Baj, T. Suski, J. Przybytek, R. Czernecki, X. Wang, A. Yoshikawa, H. Lu, W. J. Schaff, D. Muto, and Y. Nanishi, "Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior" ----Journal of Applied Physics 105, 123713 (2009) .

＊＊ Y. Ishitani, K. Kato, H. Ogiwara, S. Che, A. Yoshikawa, and X. Wang, "Carrier recombination processes in In-polar n-InN in regions of low residual electron density" ----Journal of Applied Physics 106, 113515 (2009) .

＊＊ Akihiko Yoshikawa, SongbekChe, YoshihiroIshitani, XinqiangWang, "Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs" ----Journal of Crystal Growth 311, 2073–2079 (2009).

＊＊ P. Schley, R. Goldhahn, G. Gobsch, M. Feneberg, K. Thonke, X. Wang and A. Yoshikawa, "Influence of strain on the band gap energy of wurtzite InN" ----Phys State Solidi B 246(6), 1177 (2009).

＊＊ Y. Isitani, F. Masayuki, X.Q. Wang, A. Yoshikawa, "Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon properties" ----Phys State Solidi C 6, S397 (2009).