Degree:Doctoral degree Status:Employed School/Department:凝聚态物理与材料物理研究所
Gender: Female
[1] An extended Stoney's formula including nonlinear deformation for large size wafer of multilayers with arbitrary thicknesses, Scripta Materialia, 186, 29-32, 2020.
[2] Critical thickness of GaN film in controllable stress-induced self separation for preparing native GaN substrates, Materials and Design, 180, 107985-, 2019.
[3] Anisotropic dependence of light extraction behavior on propagation path in AlGaN-based deep-ultraviolet light-emitting diodes, Optics Express, 27, A436-A444, 2019.
[4] Coordinated stress management and dislocation control in GaN growth on Si (111) substrates by using a carbon nanotube mask, Nanoscale, 11, 4489-4495, 2019.
[5] Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask, ACS Appl. Mater. Interface, 8, 18208, 2016.
[6] Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes, OPTICS EXPRESS, 24, A935, 2016.
[7] Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure, Applied Physics Letters, 108, 63053, 2016.
[8] Enhancement of surface emission in deep-UV AlGaN-based LEDs with step-shaped quantum wells, Optics Letters37, 3693 (2012),
[9] Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films, Nano Res. 5，646 （2012）,
[10] Polarization of edge emission from III-Nitride light emitting diodes of emission wavelength from 395nm-455nm, Applied Physics Letters 90，211112（2007）,
