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Critical thickness of GaN film in controllable stress-induced self separation for preparing native GaN substrates.Materials and Design,180,107985-,2019,null Materials and Design, 180, 2019. :107985-

Anisotropic dependence of light extraction behavior on propagation path in AlGaN-based deep-ultraviolet light-emitting diodes.Optics Express,27,A436-A444,2019,null Optics Express, 27, 2019. :A436-A444

Coordinated stress management and dislocation control in GaN growth on Si (111) substrates by using a carbon nanotube mask.Nanoscale,11,4489-4495,2019,null Nanoscale, 11, 2019. :4489-4495

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.ACS Appl. Mater. Interface,8,18208,2016,null ACS Appl. Mater. Interface, 8, 2016. :18208