Recently, graphene has received considerable attention, with early samples exhibiting remarkable physical, chemical and electronic properties and great promise for terahertz (THz) nanoelectronic and optoelectronic devices. CVD growth of graphene own the advantages of compatible with current CMOS technology and transferrable to any substrate over other graphene grwoth methods such as mechanical exfoliation and epitaxial desorption of Si from SiC. This makes it very promising for future graphene based device and graphene transparent electrode. Our group dedicates to the high quatlity graphene growth with chemical vapor deposition,device fabrication and spectroscopy charactertization.